APM2054NV ANPEC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 11

Technical content

Features

Applications

  • 20V/5A, RDS(ON)= 35mΩ (typ.) @ VGS= 10V RDS(ON)= 45mΩ (typ.) @ VGS= 4.5V RDS(ON)= 110mΩ (typ.) @ VGS= 2.5V
  • Super High Dense Cell Design
  • Reliable and Rugged
  • Lead Free Available (RoHS Compliant)
  • Switching Regulators
  • Switching Converters Top View of SOT-223 N-Channel MOSFET G S D (3) (2) (1) Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature.

Copyright  ANPEC Electronics Corp. Rev. B.2 - Apr., 2005 www.anpec.com.tw2 APM2054NV Symbol Parameter Rating Unit VDSS Drain-Source Voltage 20 VGSS Gate-Source Voltage ±16 V ID* Continuous Drain Current 5 IDM* Pulsed Drain Current VGS=10V A IS* Diode Continuous Forward Current 3 A TJ Maximum Junction Temperature 150 TSTG Storage Temperature Range -55 to 150 TA=25°C 1.47 PD* Power Dissipation for Single Operation TA=100°C 0.58 W Rθ JA* Thermal Resistance -Junction to Ambient 85 °C/W Note: *Surface Mounted on 1in 2 pad area, t ≤ 10sec. APM2054NV Symbol Parameter Test Condition Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA 20 V VDS=16V, VGS=0V 1 IDSS Zero Gate Voltage Drain Current TJ=85°C 30 µA VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA 0.6 0.9 1.5 V IGSS Gate Leakage Current VGS=±16V, VDS=0V ±100 nA VGS=10V, IDS=5A 35 40 VGS=4.5V, IDS=3.5A 45 54 RDS(ON) a Drain-Source On -state Resistance VGS=2.5V, IDS=2.5A 110 130 mΩ VSD a Diode Forward Voltage ISD=3A, VGS=0V 0.85 1.3 V Gate Charge Characteristics b Qg Total Gate Charge 11 13 Qgs Gate-Source Charge 3.8 Qgd Gate-Drain Charge VDS=10V, VGS=4.5V, IDS=6A 5.2 nC Electrical Characteristics (TA = 25°C unless otherwise noted) Absolute Maximum Ratings (TA = 25°C unless otherwise noted)

Copyright  ANPEC Electronics Corp. Rev. B.2 - Apr., 2005 www.anpec.com.tw3 APM2054NV APM2054NV Symbol Parameter Test Condition Min. Typ. Max. Unit Dynamic Characteristics b td(ON) Turn-on Delay Time 7 10 Tr Turn-on Rise Time 15 25 td(OFF) Turn-off Delay Time 19 26 Tf Turn-off Fall Time VDD=10V, RL=10Ω , IDS=1A, VGEN=4.5V, RG=6Ω 6 7 ns RG Gate Resistance VGS=0V,VDS=0V,F=1MHz 2.5 Ω Ciss Input Capacitance 450 Coss Output Capacitance 100 Crss Reverse Transfer Capacitance VGS=0V, VDS=20V, Frequency=1.0MHz 60 pF Notes: a : Pulse test ; pulse width≤ 300µs, duty cycle≤ 2%. b : Guaranteed by design, not subject to production testing . Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted)

Copyright  ANPEC Electronics Corp. Rev. B.2 - Apr., 2005 www.anpec.com.tw4 APM2054NV Typical Characteristics Power Dissipation Ptot - Power (W) Tj - Junction Temperature (°C) ID - Drain Current (A) Drain Current Tj - Junction Temperature (°C) Safe Operation Area VDS - Drain - Source Voltage (V) ID - Drain Current (A) Normalized Transient Thermal Resistance Thermal Transient Impedance Square Wave Pulse Duration (sec) 0 20 40 60 80 100 120 140 160 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 TA=25o C 0 20 40 60 80 100 120 140 160 TA=25o C,VG=10V 0.1 1 10 60 0.01 0.1 100 100ms Rds(on) Limit 300µs TA=25o C 1ms 10ms DC 1E-4 1E-3 0.01 0.1 1 10 100 1E-3 0.01 0.1 Mounted on 1in2 pad Rθ JA :85 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5

Copyright  ANPEC Electronics Corp. Rev. B.2 - Apr., 2005 www.anpec.com.tw5 APM2054NV VDS - Drain - Source Voltage (V) ID - Drain Current (A) Output Characteristics RDS(ON) - On - Resistance (mΩ ) Drain-Source On Resistance ID - Drain Current (A) Transfer Characteristics VGS - Gate - Source Voltage (V) ID - Drain Current (A) Tj - Junction Temperature (°C) Gate Threshold Voltage Normalized Threshold Vlotage Typical Characteristics (Cont.) 0 2 4 6 8 10 0 4 8 12 16 20 100 120 140 160 VGS=10V VGS=4.5V VGS=2.5V 0 1 2 3 4 5 Tj=125o C Tj=25o C Tj=-55o C -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS =250µA

Copyright  ANPEC Electronics Corp. Rev. B.2 - Apr., 2005 www.anpec.com.tw6 APM2054NV Drain-Source On Resistance Normalized On Resistance Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V) Source-Drain Diode Forward IS - Source Current (A) VDS - Drain - Source Voltage (V) C - Capacitance (pF) Capacitance Gate Charge QG - Gate Charge (nC) VGS - Gate-source Voltage (V) Typical Characteristics (Cont.) -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 RON@Tj=25o C: 35mΩ VGS = 10V IDS = 5A Tj=25o C Tj=150o C 0 4 8 12 16 20 100 200 300 400 500 600 700 Frequency=1MHz Crss Coss Ciss 0 4 8 12 16 20 24 VDS=10V ID = 5A

Copyright  ANPEC Electronics Corp. Rev. B.2 - Apr., 2005 www.anpec.com.tw7 APM2054NV Millimeters Inches Dim Min. Max. Min. Max. A 1.40 1.60 0.055 0.063 B 0.40 0.56 0.016 0.022 B1 0.35 0.48 0.014 0.019 C 0.35 0.44 0.014 0.017 D 4.40 4.60 0.173 0.181 D1 1.35 1.83 0.053 0.072 e 1.50 BSC 0.059 BSC e1 3.00 BSC 0.118 BSC E 2.29 2.60 0.090 0.102 H 3.75 4.25 0.148 0.167 L 0.80 1.20 0.031 0.047 α 10° 10° Packaging Information SOT-89 (Reference EIAJ ED-7500A Registration SC-62) D e B 1 2 3 L H E α A C α

Copyright  ANPEC Electronics Corp. Rev. B.2 - Apr., 2005 www.anpec.com.tw8 APM2054NV Millimeters Inches Dim Min. Max. Min. A 1.50 1.80 A 1.50 A1 0.02 0.08 A1 0.02 B 0.60 0.80 B 0.60 B1 2.90 3.10 B1 2.90 c 0.28 0.32 c 0.28 D 6.30 6.70 D 6.30 e 2.3 BSC 0.09 BSC e1 4.6 BSC 0.18 BSC H 6.70 7.30 H 6.70 L 0.91 1.10 L 0.91 K 1.50 2. 00 K 1.50 α 0° 10 ° α 0° β 13 ° 13 ° Packaging Information SOT-223 (Reference JEDEC Registration SOT-223) 1.5 TYP [0.06]

1 TYP

[0.04] 2.3 [0.092] 3.3 [0.132] 1.5 [0.06] 6.3 [0.252] A c L A B β αB D H E K e e LAND PATTERN RECOMMENDATION CONTROLLING DIMENSION IS MILLIMETERS VALUES IN [ ] ARE INCH

Copyright  ANPEC Electronics Corp. Rev. B.2 - Apr., 2005 www.anpec.com.tw9 APM2054NV Physical Specifications t 25 C to Peak tp Ramp-up tL Ramp-down ts Preheat Tsmax Tsmin TL TP Temperature Time Critical Zone TL to T P Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) , 100%Sn Lead Solderability Meets EIA Specification RSI86 -91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Average ramp-up rate (TL to TP) 3°C/second max. 3°C/second max. Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: - Temperature (TL) - Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak/Classificatioon Temperature (Tp) See table 1 See table 2 Time within 5°C of actual Peak Temperature (tp) 10-30 seconds 20-40 seconds Ramp-down Rate 6°C/second max. 6°C/second max. Time 25°C to Peak Temperature 6 minutes max. 8 minutes max. Notes: All temperatures refer to topside of the package .Measured on the body surface.

Copyright  ANPEC Electronics Corp. Table 2. Pb -free Process – Package Classification Reflow Temperatures including the stated classification temperature (this means Peak reflow temperature +0 °C. For example 260 °C+0 °C) at the rated MSL level. Table 1. SnPb Entectic Process – Package Peak Reflow Temperature s

Copyright  ANPEC Electronics Corp. Rev. B.2 - Apr., 2005 www.anpec.com.tw11 APM2054NV Application A B C J T1 T2 W P E 330 ±3 100 ± 2 13 ± 0. 5 2 ± 0.5 16.4 + 0.3 F D D1 Po P1 Ao Bo Ko tTO-252 Application Carrier Width Cover Tape Width Devices Per Reel TO- 252 16 13.3 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Cover Tape Dimensions Carrier Tape & Reel Dimensions (Cont.) A J B C (mm)