APM2030NU

APM2030 ANPEC | Alldatasheet

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• 20V/6A , RDS(ON)=35mΩ (typ.) @ VGS=4.5V R DS(ON)=38mΩ (typ.) @ VGS=2.5V
• •••• Super High Dense Cell Design for Extremely Low RDS(ON)
• •••• Reliable and Rugged
• Power Management in Computer, Portable Equipment and Battery Powered Systems. Top View of TO-252 G DS 123 APM2030N Handling Code Temp. Range Package Code Package Code U : TO-252 Operation Junction Temp. Range C :-55 to 150 C Handling Code TR : Tape & Reel APM2030N U : XXXXX - Date CodeAPM2030N XXXXX Absolute Maximum Ratings (TA = 25°C unless otherwise noted) Symbol Parameter Rating Unit VDSS Drain-Source Voltage 20 VGSS Gate-Source Voltage ±10 V

Copyright  ANPEC Electronics Corp. Rev. A.1 - Aug., 2002 www.anpec.com.tw2 APM2030N Symbol Parameter Rating Unit ID * Maximum Drain Current – Continuous 20 IDM Maximum Drain Current – Pulsed 40 A TA=25°C 50 PD Maximum Power Dissipation TA=100°C 10 W TJ Maximum Junction Temperature 150 °C TSTG Storage Temperature Range -55 to 150 °C RθjA Thermal Resistance – Junction to Ambient 50 °C/W * Surface Mounted on FR4 Board, t ≤ 10 sec. APM2030NSymbol Parameter Test Condition Min. Typ. Max. Unit Static BVDSS Drain-Source Breakdown Voltage VGS=0V , I DS=250 µ A 20 V IDSS Zero Gate Voltage Drain Current VDS=18V , V GS=0V 1 µ A VGS(th) Gate Threshold Voltage VDS=VGS , IDS=250 µ A 0.5 1.5 V IGSS Gate Leakage Current VGS=±10V , V DS=0V ±100 nA VGS=4.5V , I DS=6A 35 40RDS(ON) a Drain-Source On-state Resistance VGS=2.5V , I DS=2A 38 50 mΩ VSD a Diode Forward Voltage I SD=4A , V GS=0V 0.6 1.3 V Dynamic b Qg Total Gate Charge 91 8 Qgs Gate-Source Charge 3.6 Qgd Gate-Drain Charge VDS=10V , I DS= 5A VGS=4.5V , nC td(ON) Turn-on Delay Time 17 Tr Turn-on Rise Time 15 td(OFF) Turn-off Delay Time 45 Tf Turn-off Fall Time VDD=10V , I DS=1A , VGEN =4.5V , R G=0.2 Ω ns Ciss Input Capacitance 520 Coss Output Capacitance 110 Crss Reverse Transfer Capacitance VGS=0V VDS=15V Frequency=1.0MHz 70 pF Electrical Characteristics (TA = 25°C unless otherwise noted) Absolute Maximum Ratings (Cont.) (TA = 25°C unless otherwise noted) Notes a : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% b : Guaranteed by design, not subject to production testing

Copyright  ANPEC Electronics Corp. Rev. A.1 - Aug., 2002 www.anpec.com.tw3 APM2030N 0123456789 1 0 0.0250 0.0275 0.0300 0.0325 0.0350 0.0375 0.0400 0.0425 0.0450 0.0475 0.0500 012345 -50 -25 0 25 50 75 100 125 150 0.00 0.25 0.50 0.75 1.00 1.25 1.50 Typical Characteristics ID-Drain Current (A) Transfer Characteristics TJ=-55°CTJ=25°C TJ=125°C VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature Tj - Junction Temperature (°C) VGS(th)-Threshold Voltage (V) (Normalized) IDS=250uA RDS(ON)-On-Resistance (Ω ) On-Resistance vs. Drain Current ID - Drain Current (A) VGS=4.5V Output Characteristics ID-Drain Current (A) 1.5V VDS - Drain-to-Source Voltage (V) VGS=2.5V

Copyright  ANPEC Electronics Corp. Rev. A.1 - Aug., 2002 www.anpec.com.tw4 APM2030N 123456789 1 0 0.000 0.025 0.050 0.075 0.100 0.125 0 5 10 15 20 125 250 375 500 625 750 0 2 4 6 8 10 12 14 16 18 20 -50 -25 0 25 50 75 100 125 150 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 Typical Characteristics VGS - Gate-to-Source Voltage (V) RDS(ON)-On-Resistance (Ω ) ID=6A On-Resistance vs. Gate-to-Source Voltage RDS(ON)-On-Resistance (Ω ) (Normalized) On-Resistance vs. Junction Temperature VGS=4.5V ID=6A TJ - Junction Temperature (°C) VDS - Drain-to-Source Voltage (V) Capacitance Capacitance (pF) Ciss Coss Crss Gate Charge QG - Gate Charge (nC) VGS-Gate-Source Voltage (V) VDS=10V ID=5A Frequency=1MHz

Copyright  ANPEC Electronics Corp. Rev. A.1 - Aug., 2002 www.anpec.com.tw5 APM2030N 1E-4 1E-3 0.01 0.1 1 10 100 1000 0.01 0.1 SINGLE PULSE D=0.01 D=0.02 D=0.05 D=0.1 D=0.2 Duty Cycle=0.5 0.1 Source-Drain Diode Forward Voltage IS-Source Current (A) TJ=150°C TJ=25°C VSD -Source-to-Drain Voltage (V) Typical Characteristics Power (W) Single Pulse Power Time (sec) Square Wave Pulse Duration (sec) Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedence, Junction to Ambient 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=50°C/W 3.TJM-TA=PDMZthJA 1E-3 0.01 0.1 1 10 100 1000 100 150 200 250

Copyright  ANPEC Electronics Corp. Rev. A.1 - Aug., 2002 www.anpec.com.tw6 APM2030N TO-252( Reference JEDEC Registration TO-252) Millimeters InchesDim Min. Max. Min. Max. A 2.18 2.39 0.086 0.094 A1 0.89 1.27 0.035 0.050 b 0.508 0.89 0.020 0.035 b2 5.207 5.461 0.205 0.215 C 0.46 0.58 0.018 0.023 C1 0.46 0.58 0.018 0.023 D 5.334 6.22 0.210 0.245 E 6.35 6.73 0.250 0.265 e1 3.96 5.18 0.156 0.204 H 9.398 10.41 0.370 0.410 L 0.51 0.020 L1 0.64 1.02 0.025 0.040 L2 0.89 2.032 0.035 0.080 D b E A H L C A1e1 Packaging Information

Copyright  ANPEC Electronics Corp. Rev. A.1 - Aug., 2002 www.anpec.com.tw7 APM2030N Reflow Condition (IR/Convection or VPR Reflow) Physical Specifications Pre-heat temperature 183 C Peak temperature Time temperature Classification Reflow Profiles Convection or IR/ Convection VPR Average ramp-up rate(183 °C to Peak) 3 °C/second max. 10 °C /second max. Preheat temperature 125 ± 25 °C) 120 seconds max Temperature maintained above 183 °C 60 – 150 seconds Time within 5°C of actual peak temperature 10 –20 seconds 60 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0 °C 215-219 °C or 235 +5/-0 °C Ramp-down rate 6 °C /second max. 10 °C /second max. Time 25°C to peak temperature 6 minutes max. Package Reflow Conditions pkg. thickness ≥≥≥≥ 2.5mm and all bgas pkg. thickness < 2.5mm and pkg. volume ≥≥≥≥ 350 mm³ pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 220 +5/-0 °C Convection 235 +5/-0 °C VPR 215-219 °C VPR 235 +5/-0 °C IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.

Copyright  ANPEC Electronics Corp. Rev. A.1 - Aug., 2002 www.anpec.com.tw8 APM2030N Carrier Tape & Reel Dimensions Application A B C J T1 T2 W P E 330 ±31 0 0 ± 21 3 ± 0. 5 2 ± 0.5 16.4 + 0.3 F D D1 Po P1 Ao Bo Ko tTO-252 A J B C t Ao E W Po P Ko Bo D F Test item Method Description SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles Reliability test program

Copyright  ANPEC Electronics Corp. Rev. A.1 - Aug., 2002 www.anpec.com.tw9 APM2030N Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Cover Tape Dimensions Application Carrier Width Cover Tape Width Devices Per Reel TO- 252 16 13.3 2500