APM2023N ANPEC | Alldatasheet
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Technical content
Features
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- 20V/12.8A , RDS(ON)=20mΩ(typ.) @ VGS=4.5V RDS(ON)=29mΩ(typ.) @ VGS=2.5V
- •••• Super High Dense Cell Design for Extremely Low RDS(ON)
- •••• Reliable and Rugged
- Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. Ordering and Marking Information APM2023N Handling Code Temp. Range Package Code Package Code U : TO-252 Operation Junction Temp. Range C :-55 to 150 C Handling Code TR : Tape & Reel APM2023N U : XXXXX - Date Code APM2023N XXXXX Absolute Maximum Ratings (TA = 25°C unless otherwise noted) Symbol Parameter Rating Unit VDSS Drain-Source Voltage VGSS Gate-Source Voltage ±12 V ID Maximum Drain Current – Continuous 12.8 IDM Maximum Drain Current – Pulsed A * Surface Mounted on FR4 Board, t ≤ 10 sec. G D S Pin Description Top View of TO-252 N-Channel MOSFET G S D
Copyright ANPEC Electronics Corp. Rev. A.1 - Dec., 2002 www.anpec.com.tw APM2023N Symbol Parameter Rating Unit TA=25°C PD Maximum Power Dissipation TA=100°C W TJ Maximum Junction Temperature 150 TSTG Storage Temperature Range -55 to 150 RθjA Thermal Resistance – Junction to Ambient °C/W Absolute Maximum Ratings (Cont.) (TA = 25°C unless otherwise noted) APM2023N Symbol Parameter Test Condition Min. Typ. Max. Unit Static BVDSS Drain-Source Breakdown Voltage VGS=0V , IDS=250µA V IDSS Zero Gate Voltage Drain Current VDS=16V , VGS=0V µA VGS(th) Gate Threshold Voltage VDS=VGS , IDS=250µA 0.5 0.7 V IGSS Gate Leakage Current VGS=±12V , VDS=0V ±100 nA VGS=4.5V , IDS=12.8A RDS(ON) a Drain-Source On-state Resistance VGS=2.5V , IDS=6.6A mΩ VSD a Diode Forward Voltage ISD=1.7A , VGS=0V 0.8 1.1 V Dynamicb Qg Total Gate Charge Qgs Gate-Source Charge 5.4 Qgd Gate-Drain Charge VDS=10V , IDS= 6A VGS=4.5V , nC td(ON) Turn-on Delay Time Tr Turn-on Rise Time td(OFF) Turn-off Delay Time 120 Tf Turn-off Fall Time VDD=10V , IDS=1A , VGEN=4.5V , RG=0.2Ω ns Ciss Input Capacitance 780 Coss Output Capacitance 165 Crss Reverse Transfer Capacitance VGS=0V VDS=15V Frequency=1.0MHz 105 pF Electrical Characteristics (TA = 25°C unless otherwise noted) Notes a : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% b : Guaranteed by design, not subject to production testing
Copyright ANPEC Electronics Corp. Rev. A.1 - Dec., 2002 www.anpec.com.tw APM2023N 0.010 0.015 0.020 0.025 0.030 0.035 0.040 0.045 0.050 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Typical Characteristics ID-Drain Current (A) Transfer Characteristics TJ=-55°C TJ=25°C TJ=125°C VGS - Gate-to-Source Voltage (V) -50 -25 100 125 150 0.00 0.25 0.50 0.75 1.00 1.25 1.50 Threshold Voltage vs. Junction Temperature Tj - Junction Temperature (°C) VGS(th)-Threshold Voltage (V) (Normalized) IDS=250uA RDS(ON)-On-Resistance (Ω) On-Resistance vs. Drain Current ID - Drain Current (A) VGS=2.5V Output Characteristics ID-Drain Current (A) VDS - Drain-to-Source Voltage (V) VGS=4.5V VGS=2V
Copyright ANPEC Electronics Corp. Rev. A.1 - Dec., 2002 www.anpec.com.tw APM2023N 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.10 200 400 600 800 1000 1200 -50 -25 100 125 150 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 Typical Characteristics VGS - Gate-to-Source Voltage (V) RDS(ON)-On-Resistance (Ω) ID=6.6A On-Resistance vs. Gate-to-Source Voltage RDS(ON)-On-Resistance (Ω) (Normalized) On-Resistance vs. Junction Temperature VGS=4.5V ID=12.8A TJ - Junction Temperature (°C) VDS - Drain-to-Source Voltage (V) Capacitance Capacitance (pF) Coss Ciss Crss Gate Charge QG - Gate Charge (nC) VGS-Gate-Source Voltage (V) VDS=10V ID=6A Frequency=1MHz
Copyright ANPEC Electronics Corp. Rev. A.1 - Dec., 2002 www.anpec.com.tw APM2023N 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.1 Source-Drain Diode Forward Voltage IS-Source Current (A) TJ=150°C TJ=25°C VSD -Source-to-Drain Voltage (V) Typical Characteristics 0.01 0.1 Power (W) Single Pulse Power Time (sec) 1E-4 1E-3 0.01 0.1 0.01 0.1 Square Wave Pulse Duration (sec) Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedence, Junction to Ambient 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=50°C/W 3.TJM-TA=PDMZthJA Duty Cycle=0.5 D=0.2 D=0.1 D=0.05 D=0.02 SINGLE PULSE
Copyright ANPEC Electronics Corp. Rev. A.1 - Dec., 2002 www.anpec.com.tw APM2023N Packaging Information TO-252 (Reference JEDEC Registration TO-252) Millimeters Inches Dim Min. Max. Min. Max. A 2.18 2.39 0.086 0.094 0.89 1.27 0.035 0.050 b 0.508 0.89 0.020 0.035 5.207 5.461 0.205 0.215 C 0.46 0.58 0.018 0.023 0.46 0.58 0.018 0.023 D 5.334 6.22 0.210 0.245 E 6.35 6.73 0.250 0.265 3.96 5.18 0.156 0.204 H 9.398 10.41 0.370 0.410 L 0.51 0.020 0.64 1.02 0.025 0.040 0.89 2.032 0.035 0.080 D b E A H L C
Copyright ANPEC Electronics Corp. Rev. A.1 - Dec., 2002 www.anpec.com.tw APM2023N Reflow Condition (IR/Convection or VPR Reflow) Physical Specifications Pre-heat temperature 183 C Peak temperature Time temperature Classification Reflow Profiles Convection or IR/ Convection VPR Average ramp-up rate(183°C to Peak) 3°C/second max. 10 °C /second max. Preheat temperature 125 ± 25°C) 120 seconds max Temperature maintained above 183°C 60 – 150 seconds Time within 5°C of actual peak temperature 10 –20 seconds 60 seconds Peak temperature range 215-219°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 10 °C /second max. Time 25°C to peak temperature 6 minutes max. Package Reflow Conditions pkg. thickness ≥≥≥≥ 2.5mm and all bgas pkg. thickness < 2.5mm and pkg. volume ≥≥≥≥ 350 mm³ pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 220 +5/-0 °C Convection 235 +5/-0 °C VPR 215-219 °C VPR 235 +5/-0 °C IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Copyright ANPEC Electronics Corp. Rev. A.1 - Dec., 2002 www.anpec.com.tw APM2023N Carrier Tape & Reel Dimensions A J B C t Ao E W Po P Ko Bo D F Test item Method
Description
245°C,5 SEC HOLT MIL-STD 883D-1005.7
1000 Hrs Bias @ 125°C
JESD-22-B, A102
168 Hrs, 100% RH, 121°C
MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles Reliability test program Application A B C J W P E 330 ±3 100 ± 2 13 ± 0. 5 2 ± 0.5 16.4 + 0.3 -0.2 2.5± 0.5 16+ 0.3 - 0.1 8 ± 0.1 1.75± 0.1 F D Po Ao Bo Ko t TO-252 7.5 ± 0.1 1.5 +0.1 1.5± 0.25 4.0 ± 0.1 2.0 ± 0.1 6.8 ± 0.1 10.4± 0.1 2.5± 0.1 0.3±0.05
Copyright ANPEC Electronics Corp. Rev. A.1 - Dec., 2002 www.anpec.com.tw APM2023N Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Cover Tape Dimensions Application Carrier Width Cover Tape Width Devices Per Reel TO- 252 13.3 2500