APM1403S | DigiCamel IC Datasheet

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APM1403S ANPEC | Alldatasheet

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/G20/G50/G2D/G43/G68/G61/G6E/G6E/G65/G6C/G20/G45/G6E/G68/G61/G6E/G63/G65/G6D/G65/G6E/G74/G20/G4D/G6F/G64/G65/G20/G4D/G4F/G53/G46/G45/G54 /G43/G6F/G70/G79/G72/G69/G67/G68/G74/G20 /G41/G4E/G50/G45/G43/G20/G45/G6C/G65/G63/G74/G72/G6F/G6E/G69/G63/G73/G20/G43/G6F/G72/G70/G2E /G52/G65/G76/G2E/G20/G42/G2E/G32/G20/G2D/G20/G4D/G61/G72/G2E/G2C/G20/G32/G30/G30/G35 /G77/G77/G77/G2E/G61/G6E/G70/G65/G63/G2E/G63/G6F/G6D/G2E/G74/G77/G31 /G41/G4E/G50/G45/G43/G20/G72/G65/G73/G65/G72/G76/G65/G73/G20/G74/G68/G65/G20/G72/G69/G67/G68/G74/G20/G74/G6F/G20/G6D/G61/G6B/G65/G20/G63/G68/G61/G6E/G67/G65/G73/G20/G74/G6F/G20/G69/G6D/G70/G72/G6F/G76/G65/G20/G72/G65/G6C/G69/G61/G62/G69/G6C/G69/G74/G79/G20/G6F/G72/G20/G6D/G61/G6E/G75/G66/G61/G63/G74/G75/G72/G61/G62/G69/G6C/G69/G74/G79/G20/G77/G69/G74/G68/G6F/G75/G74/G20/G6E/G6F/G74/G69/G63/G65/G2C/G20/G61/G6E/G64/G20/G61/G64/G76/G69/G73/G65 /G63/G75/G73/G74/G6F/G6D/G65/G72/G73/G20/G74/G6F/G20/G6F/G62/G74/G61/G69/G6E/G20/G74/G68/G65/G20/G6C/G61/G74/G65/G73/G74/G20/G76/G65/G72/G73/G69/G6F/G6E/G20/G6F/G66/G20/G72/G65/G6C/G65/G76/G61/G6E/G74/G20/G69/G6E/G66/G6F/G72/G6D/G61/G74/G69/G6F/G6E/G20/G74/G6F/G20/G76/G65/G72/G69/G66/G79/G20/G62/G65/G66/G6F/G72/G65/G20/G70/G6C/G61/G63/G69/G6E/G67/G20/G6F/G72/G64/G65/G72/G73/G2E /G41/G50/G4D/G31/G34/G30/G33/G53 /G46/G65/G61/G74/G75/G72/G65/G73 /G41/G70/G70/G6C/G69/G63/G61/G74/G69/G6F/G6E/G73

Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems /G50/G69/G6E/G20/G44/G65/G73/G63/G72/G69/G70/G74/G69/G6F/G6E /G4F/G72/G64/G65/G72/G69/G6E/G67/G20/G61/G6E/G64/G20/G4D/G61/G72/G6B/G69/G6E/G67/G20/G49/G6E/G66/G6F/G72/G6D/G61/G74/G69/G6F/G6E P-Channel MOSFET G S D APM1403 Handling Code Temp. Range Package Code Package Code S : SC-70 Operating Junction Temp. Range C : -55 to 150°C Handling Code TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device APM1403 S : 03 Lead Free Code Top View of SC-70
-20V/-0.8A , RDS(ON) =160m Ω (typ.) @ VGS =-4.5V RDS(ON) =190m Ω (typ.) @ VGS =-2.5V
•••• Super High Dense Cell Design
•••• Reliable and Rugged
•••• Lead Free Available (RoHS Compliant) Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termina- tion finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classifica- tion at lead-free peak reflow temperature.

/G43/G6F/G70/G79/G72/G69/G67/G68/G74/G20 /G41/G4E/G50/G45/G43/G20/G45/G6C/G65/G63/G74/G72/G6F/G6E/G69/G63/G73/G20/G43/G6F/G72/G70/G2E /G52/G65/G76/G2E/G20/G42/G2E/G32/G20/G2D/G20/G4D/G61/G72/G2E/G2C/G20/G32/G30/G30/G35 /G77/G77/G77/G2E/G61/G6E/G70/G65/G63/G2E/G63/G6F/G6D/G2E/G74/G77/G32 /G41/G50/G4D/G31/G34/G30/G33/G53 /G41/G62/G73/G6F/G6C/G75/G74/G65/G20/G4D/G61/G78/G69/G6D/G75/G6D/G20/G52/G61/G74/G69/G6E/G67/G73/G20/G20(TA = 25°C unless otherwise noted) /G45/G6C/G65/G63/G74/G72/G69/G63/G61/G6C/G20/G43/G68/G61/G72/G61/G63/G74/G65/G72/G69/G73/G74/G69/G63/G73/G20/G20(TA = 25°C unless otherwise noted) Symbol Parameter Rating Unit V DSS Drain-Source Voltage -20 V GSS Gate-Source Voltage ±10 V ID * Continuous Drain Current -0.8 IDM * Pulsed Drain Current V GS =-4.5V -3.3 A IS * Diode Continuous Forward Current -0.5 A TJ Maximum Junction Temperature 150 TSTG Storage Temperature Range -55 to 150 TA =25°C 0.35 P D * Maximum Power Dissipation TA =100°C 0.14 W R θJA* Thermal Resistance-Junction to Ambient 360 °C/W /G20Note: *Surface Mounted on 1in2 pad area, t ≤ 10sec. APM1403S Symbol Parameter Test Condition Min. Typ. Max. Unit Static Characteristics BV DSS Drain-Source Breakdown Voltage VGS =0V, IDS =-250µA -20 V IDSS Zero Gate Voltage Drain Current VDS =-16V, VGS =0V -1 µA VGS(th) Gate Threshold Voltage VDS =V GS , IDS =-250µA -0.5 -0.7 -1 V IGSS Gate Leakage Current V GS =±10V, VDS =0V ±100 nA VGS =-4.5V, IDS =-0.8A 160 210 R DS(ON) a Drain-Source On-state Resistance VGS =-2.5V, IDS =-0.4A 190 250 m Ω VSD a Diode Forward Voltage I SD =-0.5A, VGS =0V -0.7 -1.3 V Dynamic Characteristics b C iss Input Capacitance 330 C oss Output Capacitance 60 C rss Reverse Transfer Capacitance VGS =0V, VDS =-15V, Frequency=1.0MHz 45 pF td(ON) Turn-on Delay Time 2 5 Tr Turn-on Rise Time 2 5 td(OFF) Turn-off Delay Time 8 12 Tf Turn-off Fall Time VDD =-10V, IDS =-1A, VGEN =-4.5V, RG =6Ω , R L=10Ω 4 6 ns /G20

/G43/G6F/G70/G79/G72/G69/G67/G68/G74/G20 /G41/G4E/G50/G45/G43/G20/G45/G6C/G65/G63/G74/G72/G6F/G6E/G69/G63/G73/G20/G43/G6F/G72/G70/G2E /G52/G65/G76/G2E/G20/G42/G2E/G32/G20/G2D/G20/G4D/G61/G72/G2E/G2C/G20/G32/G30/G30/G35 /G77/G77/G77/G2E/G61/G6E/G70/G65/G63/G2E/G63/G6F/G6D/G2E/G74/G77/G33 /G41/G50/G4D/G31/G34/G30/G33/G53 APM1403S Symbol Parameter Test Condition Min. Typ. Max. Unit Gate Charge Characteristicsb Q g Total Gate Charge 4 5 Q gs Gate-Source Charge 0.6 Q gd Gate-Drain Charge VDS =-10V, VGS =-4.5V, IDS =-0.8A nC /G20Notes: a : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%. b : Guaranteed by design, not subject to production testing. /G45/G6C/G65/G63/G74/G72/G69/G63/G61/G6C/G20/G43/G68/G61/G72/G61/G63/G74/G65/G72/G69/G73/G74/G69/G63/G73/G20/G28/G43/G6F/G6E/G74/G2E/G29/G20/G20(TA = 25°C unless otherwise noted)

/G43/G6F/G70/G79/G72/G69/G67/G68/G74/G20 /G41/G4E/G50/G45/G43/G20/G45/G6C/G65/G63/G74/G72/G6F/G6E/G69/G63/G73/G20/G43/G6F/G72/G70/G2E /G52/G65/G76/G2E/G20/G42/G2E/G32/G20/G2D/G20/G4D/G61/G72/G2E/G2C/G20/G32/G30/G30/G35 /G77/G77/G77/G2E/G61/G6E/G70/G65/G63/G2E/G63/G6F/G6D/G2E/G74/G77/G34 /G41/G50/G4D/G31/G34/G30/G33/G53 1E-4 1E-3 0.01 0.1 1 10 30 0.01 0.1 Mounted on 1in pad R θJA : 360 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5 /G54/G79/G70/G69/G63/G61/G6C/G20/G43/G68/G61/G72/G61/G63/G74/G65/G72/G69/G73/G74/G69/G63/G73 -ID - Drain Current (A) Drain Current Tj - Junction Temperature (°C) Safe Operation Area -VDS - Drain - Source Voltage (V) Thermal Transient Impedance Square Wave Pulse Duration (sec) Power Dissipation Ptot - Power (W) Tj - Junction Temperature (°C) -ID - Drain Current (A) 0 2 04 06 08 0 1 0 0 1 2 0 1 4 0 1 6 0 0.00 0.08 0.16 0.24 0.32 0.40 TA=25 o C 0 2 04 06 08 0 1 0 0 1 2 0 1 4 0 1 6 0 0.0 0.2 0.4 0.6 0.8 1.0 TA=25 o C, VG =4.5V Normalized Transient Thermal Resistance 0.1 1 10 50 0.01 0.1 Rds(on) Limit TA=25 o C 10ms 300µs 1ms 100ms DC

/G43/G6F/G70/G79/G72/G69/G67/G68/G74/G20 /G41/G4E/G50/G45/G43/G20/G45/G6C/G65/G63/G74/G72/G6F/G6E/G69/G63/G73/G20/G43/G6F/G72/G70/G2E /G52/G65/G76/G2E/G20/G42/G2E/G32/G20/G2D/G20/G4D/G61/G72/G2E/G2C/G20/G32/G30/G30/G35 /G77/G77/G77/G2E/G61/G6E/G70/G65/G63/G2E/G63/G6F/G6D/G2E/G74/G77/G35 /G41/G50/G4D/G31/G34/G30/G33/G53 R DS(ON) - On - Resistance (Ω ) Drain-Source On Resistance -ID - Drain Current (A) Tj - Junction Temperature (°C) Gate Threshold Voltage Normalized Threshold Voltage -VDS - Drain - Source Voltage (V) -ID - Drain Current (A) Output Characteristics Transfer Characteristics -VGS - Gate - Source Voltage (V) -ID - Drain Current (A) /G54/G79/G70/G69/G63/G61/G6C/G20/G43/G68/G61/G72/G61/G63/G74/G65/G72/G69/G73/G74/G69/G63/G73/G20/G28/G43/G6F/G6E/G74/G2E/G29 -50 -25 0 25 50 75 100 125 150 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 IDS = -250µA 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 -1.5V -1V -2V 0.09 0.12 0.15 0.18 0.21 0.24 0.27 0.30 VGS = -2.5V VGS = -4.5V 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Tj=125 o C Tj=25 o C Tj=-55 o C

/G43/G6F/G70/G79/G72/G69/G67/G68/G74/G20 /G41/G4E/G50/G45/G43/G20/G45/G6C/G65/G63/G74/G72/G6F/G6E/G69/G63/G73/G20/G43/G6F/G72/G70/G2E /G52/G65/G76/G2E/G20/G42/G2E/G32/G20/G2D/G20/G4D/G61/G72/G2E/G2C/G20/G32/G30/G30/G35 /G77/G77/G77/G2E/G61/G6E/G70/G65/G63/G2E/G63/G6F/G6D/G2E/G74/G77/G36 /G41/G50/G4D/G31/G34/G30/G33/G53 -VDS - Drain - Source Voltage (V) Drain-Source On Resistance Normalized On Resistance Tj - Junction Temperature (°C) C - Capacitance (pF) -VSD - Source - Drain Voltage (V) Source-Drain Diode Forward -IS - Source Current (A) Capacitance Gate Charge Q G - Gate Charge (nC) -VGS - Gate-source Voltage (V) /G54/G79/G70/G69/G63/G61/G6C/G20/G43/G68/G61/G72/G61/G63/G74/G65/G72/G69/G73/G74/G69/G63/G73/G20/G28/G43/G6F/G6E/G74/G2E/G29 -50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 R ON @Tj = 25°C : 160mΩ VGS = -4.5V IDS = -0.8A 048 1 2 1 6 2 0 100 200 300 400 500 600 Frequency=1MHz Crss Coss Ciss 012345 VDS = -10V IDS = -0.8A 0.1 Tj=150 o C Tj=25 o C

/G43/G6F/G70/G79/G72/G69/G67/G68/G74/G20 /G41/G4E/G50/G45/G43/G20/G45/G6C/G65/G63/G74/G72/G6F/G6E/G69/G63/G73/G20/G43/G6F/G72/G70/G2E /G52/G65/G76/G2E/G20/G42/G2E/G32/G20/G2D/G20/G4D/G61/G72/G2E/G2C/G20/G32/G30/G30/G35 /G77/G77/G77/G2E/G61/G6E/G70/G65/G63/G2E/G63/G6F/G6D/G2E/G74/G77/G37 /G41/G50/G4D/G31/G34/G30/G33/G53 /G50/G61/G63/G6B/G61/G67/G69/G6E/G67/G20/G49/G6E/G66/G6F/G72/G6D/G61/G74/G69/G6F/G6E Dimensions In Millimeters Dimensions In Inches Symbol Min. Max. Min. Max. A 0.900 1.100 0.035 0.043 A1 0.000 0.100 0.000 0.004 A2 0.900 1.000 0.035 0.039 b 0.200 0.400 0.008 0.016 c 0.080 0.150 0.003 0.006 D 2.000 2.200 0.079 0.087 E 1.150 1.350 0.045 0.053 E1 2.150 2.450 0.085 0.096 e 0.650TYP 0.026TYP e1 1.200 1.400 0.047 0.055 L 0.525REF 0.021PEF L1 0.260 0.460 0.010 0.018 θ 0 ° 8 ° 0 ° 8 ° SC-70 e D b A2 A E L C 0.20 /GA3/G63

/G43/G6F/G70/G79/G72/G69/G67/G68/G74/G20 /G41/G4E/G50/G45/G43/G20/G45/G6C/G65/G63/G74/G72/G6F/G6E/G69/G63/G73/G20/G43/G6F/G72/G70/G2E /G52/G65/G76/G2E/G20/G42/G2E/G32/G20/G2D/G20/G4D/G61/G72/G2E/G2C/G20/G32/G30/G30/G35 /G77/G77/G77/G2E/G61/G6E/G70/G65/G63/G2E/G63/G6F/G6D/G2E/G74/G77/G38 /G41/G50/G4D/G31/G34/G30/G33/G53 Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. /G20 t 25 C to Peak tp Ramp-up tL Ramp-down ts Preheat Tsmax Tsmin T L T P Temperature Time Critical Zone T L to TP °/G20 /G52/G65/G66/G6C/G6F/G77/G20/G43/G6F/G6E/G64/G69/G74/G69/G6F/G6E/G20(IR/Convection or VPR Reflow) /G43/G6C/G61/G73/G73/G69/G66/G69/G63/G61/G74/G69/G6E/G20/G52/G65/G66/G6C/G6F/G77/G20/G50/G72/G6F/G66/G69/G6C/G65/G73 /G50/G68/G79/G73/G69/G63/G61/G6C/G20/G53/G70/G65/G63/G69/G66/G69/G63/G61/G74/G69/G6F/G6E/G73 Sn-Pb Eutectic Assembly Pb-Free Assembly Profile Feature Large Body Small Body Large Body Small Body Average ramp-up rate (TL to TP) 3°C/second max. 3 °C/second max. Preheat /G2D/G20Temperature Min (Tsmin) /G2D/G20Temperature Mix (Tsmax) /G2D/G20Time (min to max)(ts) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Tsmax to TL - Ramp-up Rate 3°C/second max Tsmax to TL /G2D/G20Temperature(TL) /G2D/G20Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(Tp) 225 +0/-5°C 240 +0/-5 °C 245 +0/-5 °C 250 +0/-5 °C Time within 5°C of actual Peak Temperature(tp) 10-30 seconds 10-30 seconds 10-30 seconds 20-40 seconds Ramp-down Rate 6°C/second max. 6 °C/second max. Time 25°C to Peak Temperature 6 minutes max. 8 minutes max. Note: All temperatures refer to topside of the package. Measured on the body surface.

/G43/G6F/G70/G79/G72/G69/G67/G68/G74/G20 /G41/G4E/G50/G45/G43/G20/G45/G6C/G65/G63/G74/G72/G6F/G6E/G69/G63/G73/G20/G43/G6F/G72/G70/G2E /G52/G65/G76/G2E/G20/G42/G2E/G32/G20/G2D/G20/G4D/G61/G72/G2E/G2C/G20/G32/G30/G30/G35 /G77/G77/G77/G2E/G61/G6E/G70/G65/G63/G2E/G63/G6F/G6D/G2E/G74/G77/G39 /G41/G50/G4D/G31/G34/G30/G33/G53 /G43/G61/G72/G72/G69/G65/G72/G20/G54/G61/G70/G65/G20/G26/G20/G52/G65/G65/G6C/G20/G44/G69/G6D/G65/G6E/G73/G69/G6F/G6E/G73 A J B C t Ao E W Po P Ko Bo D F Test item Method Description SOLDERABILITY MIL-STD-883D-2003 245 °C,5 SEC HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125 °C PCT JESD-22-B, A102 168 Hrs, 100% RH, 121 °C TST MIL-STD 883D-1011.9 -65 °C ~ 150°C, 200 Cycles /G52/G65/G6C/G69/G61/G62/G69/G6C/G69/G74/G79/G20/G54/G65/G73/G74/G20/G50/G72/G6F/G67/G72/G61/G6D Application A B C J T1 T2 W P E F D D1 Po P1 Ao Bo Ko t SC-70 /G20

/G43/G6F/G70/G79/G72/G69/G67/G68/G74/G20 /G41/G4E/G50/G45/G43/G20/G45/G6C/G65/G63/G74/G72/G6F/G6E/G69/G63/G73/G20/G43/G6F/G72/G70/G2E /G52/G65/G76/G2E/G20/G42/G2E/G32/G20/G2D/G20/G4D/G61/G72/G2E/G2C/G20/G32/G30/G30/G35 /G77/G77/G77/G2E/G61/G6E/G70/G65/G63/G2E/G63/G6F/G6D/G2E/G74/G77/G31/G30 /G41/G50/G4D/G31/G34/G30/G33/G53 /G43/G75/G73/G74/G6F/G6D/G65/G72/G20/G53/G65/G72/G76/G69/G63/G65 Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 /G43/G6F/G76/G65/G72/G20/G54/G61/G70/G65/G20/G44/G69/G6D/G65/G6E/G73/G69/G6F/G6E/G73 Application Carrier Width Cover Tape Width Devices Per Reel SC- 70 8 5.3 3000 /G20

Product Information

APM1403S specifications and overview.

Summary

P-Channel Enhancement Mode MOSFET

Description

P-Channel Enhancement Mode MOSFET

Source title APM1403S Datasheet(PDF) - Anpec Electronics Coropration

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