AN80XX PANASONIC | Alldatasheet

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1Publication date: December 2001 SFF00007CEB AN80xx/AN80xxM Series 3-pin, positive output, low dropout voltage regulator (50 mA type) I Overview The AN80xx series and the AN80xxM series are 3- pin, low dropout, fixed positive output type monolithic voltage regulators. Since their power consumption can be minimized, they are suitable for battery-used power supply and reference voltage. 13 types of output voltage are available; 2V, 2.5V, 3V, 3.5V (SSIP003-P-0000 only), 4V, 4.5V, 5V, 6V, 7V, 8V, 8.5V, 9V, and 10V. I Features

  • Input/output voltage difference: 0.3V max.
  • Output current of up to 50mA
  • Low bias current: 0.6mA typ.
  • Output voltage: 2V, 2.5V, 3V, 3.5V (SSIP003-P-0000 only), 4V, 4.5V, 5V, 6V, 7V, 8V, 8.5V, 9V, and 10V
  • Built-in overcurrent protection circuit SSIP003-P-0000 AN80xx series Unit: mm AN80xxM series Unit: mm Voltage Reference Current Limiter Starter VO COUTCIN R1 = 5kΩ CIN = 0.33µF COUT = 10µFVI Note) The number in ( ) shows the pin number for the AN80xx series. Error Amp. − + (1) (3) (2) I Block Diagram (AN80xxM series) HSIP003-P-0000B 5.0±0.2 5.1±0.213.5±0.5 (1.0)(1.0) 4.0±0.2 2.3±0.2 0.6±0.15 0.43+0.1 –0.05 2.54 0.43+0.1 –0.05 213 2.6 typ. 1.6 max. 1.8 max. 4.6 max. 3.0 1.5 1.5 321 4.25 max. 2.6 max.0.8 min. 1: Input 2: Output 3: GND 1: Output 2: GND 3: Input Note) The packages (SSIP003-P-0000 and HSIP003- P-0000B) of this product will be changed to lead-free type (SSIP003-P-0000S and HSIP003-P-0000Q). See the new package di- mensions section later of this datasheet.

2 SFF00007CEB

I Absolute Maximum Ratings at Ta = 25°C I Electrical Characteristics at Ta = 25°C

  • AN8002, AN8002M (2V type) VI ICC PD Topr Tstg Supply voltage Supply current Power dissipation Operating ambient temperature Storage temperature Parameter Symbol Rating 100 650 * −30 to +80 −55 to +150 −55 to +125 * AN80xxM series is mounted on standard board (glass epoxy: 20mm × 20mm × t1.7mm with Cu foil of 1cm2 or more). AN80xx series AN80xxM series V mA mW Unit Parameter Symbol Conditions Min Typ Max Output voltage VO 2.08 V2Tj = 25°C Line regulation REGIN mVVI = 2.5 to 8V, Tj = 25°C Load regulation REGL 20 mVIO = 1 to 40mA, Tj = 25°C mV Minimum input/output voltage difference VDIF(min) V0.06VI = 1.9V, IO = 20mA, Tj = 25°C VVI = 1.9V, IO = 50mA, Tj = 25°C IO = 1 to 50mA, Tj = 25°C mA0.6IO = 0mA, Tj = 25°C Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the characteristic value drift due to the chip junction temperature rise can be ignored. Note 2) Unless otherwise specified, VI = 3V , IO = 20mA and CO = 10µF. Bias current IBias dBVI = 3 to 5V, f = 120HzRipple rejection ratio RR µVOutput noise voltage Vno mV/°C0.1 f = 10Hz to 100kHz Output voltage temperature coefficient ∆VO/Ta Tj = −30 to +125°C 0.2 0.3 1.92 0.12 Unit
  • AN8025, AN8025M (2.5V type) VO V REGIN mV REGL mV mV VDIF(min) V V mAIBias dBRR µVVno mV/°C∆VO/Ta 2.62.5Tj = 25°C VI = 3 to 8.5V, Tj = 25°C 20IO = 1 to 40mA, Tj = 25°C 0.07VI = 2.4V, IO = 20mA, Tj = 25°C VI = 2.4V, IO = 50mA, Tj = 25°C IO = 1 to 50mA, Tj = 25°C 0.6IO = 0mA, Tj = 25°C VI = 3.5 to 5.5V, f = 120Hz 0.13 f = 10Hz to 100kHz Tj = −30 to +125°C 0.2 0.3 2.4 0.12 2.5 12.5 Parameter Symbol Conditions Min Typ Max Output voltage Line regulation Load regulation Minimum input/output voltage difference Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the characteristic value drift due to the chip junction temperature rise can be ignored. Note 2) Unless otherwise specified, VI = 3.5V , IO = 20mA and CO = 10µF. Bias current Ripple rejection ratio Output noise voltage Output voltage temperature coefficient Unit

I Electrical Characteristics at Ta = 25°C (continued)

  • AN8003, AN8003M (3V type)
  • AN8035(3.5V type) VO V REGIN mV REGL mV mV VDIF(min) V V mAIBias dBRR µVVno mV/°C∆VO/Ta 3.123Tj = 25°C VI = 3.5 to 9V, Tj = 25°C 25IO = 1 to 40mA, Tj = 25°C 0.07VI = 2.9V, IO = 20mA, Tj = 25°C VI = 2.9V, IO = 50mA, Tj = 25°C IO = 1 to 50mA, Tj = 25°C 0.6IO = 0mA, Tj = 25°C VI = 4 to 6V, f = 120Hz 0.15 f = 10Hz to 100kHz Tj = −30 to +125°C 0.2 0.3 2.88 0.12 Parameter Symbol Conditions Min Typ Max Output voltage Line regulation Load regulation Minimum input/output voltage difference Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the characteristic value drift due to the chip junction temperature rise can be ignored. Note 2) Unless otherwise specified, VI = 4V , IO = 20mA and CO = 10µF. Bias current Ripple rejection ratio Output noise voltage Output voltage temperature coefficient Unit VO V REGIN mV REGL mV mV VDIF(min) V V mAIBias dBRR µVVno mV/°C∆VO/Ta yp 3.643.5Tj = 25°C VI = 4 to 9.5V, Tj = 25°C 30IO = 1 to 40mA, Tj = 25°C 0.07VI = 3.4V, IO = 20mA, Tj = 25°C VI = 3.4V, IO = 50mA, Tj = 25°C IO = 1 to 50mA, Tj = 25°C 0.6IO = 0mA, Tj = 25°C VI = 4.5 to 6.5V, f = 120Hz 0.2 f = 10Hz to 100kHz Tj = −30 to +125°C 0.2 0.3 3.36 0.12 3.5 Parameter Symbol Conditions Min Typ Max Output voltage Line regulation Load regulation Minimum input/output voltage difference Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the characteristic value drift due to the chip junction temperature rise can be ignored. Note 2) Unless otherwise specified, VI = 4.5V , IO = 20mA and CO = 10µF. Bias current Ripple rejection ratio Output noise voltage Output voltage temperature coefficient Unit
  • AN8004, AN8004M (4V type) VO V REGIN mV REGL mV mV VDIF(min) V V mAIBias dBRR µVVno mV/°C∆VO/Ta 4.164Tj = 25°C VI = 4.5 to 10V, Tj = 25°C 30IO = 1 to 40mA, Tj = 25°C 0.07VI = 3.8V, IO = 20mA, Tj = 25°C VI = 3.8V, IO = 50mA, Tj = 25°C IO = 1 to 50mA, Tj = 25°C 0.6IO = 0mA, Tj = 25°C VI = 5 to 7V, f = 120Hz 0.2 f = 10Hz to 100kHz Tj = −30 to +125°C 0.2 0.3 3.84 0.12 3.5 Parameter Symbol Conditions Min Typ Max Output voltage Line regulation Load regulation Minimum input/output voltage difference Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the characteristic value drift due to the chip junction temperature rise can be ignored. Note 2) Unless otherwise specified, VI = 5V , IO = 20mA and CO = 10µF. Bias current Ripple rejection ratio Output noise voltage Output voltage temperature coefficient Unit

4 SFF00007CEB

I Electrical Characteristics at Ta = 25°C (continued)

  • AN8045, AN8045M (4.5V type)
  • AN8005, AN8005M (5V type)
  • AN8006, AN8006M (6V type) VO V REGIN mV REGL mV mV VDIF(min) V V mAIBias dBRR µVVno mV/°C∆VO/Ta 4.684.5Tj = 25°C VI = 5 to 10.5V, Tj = 25°C 35IO = 1 to 40mA, Tj = 25°C 0.07VI = 4.3V, IO = 20mA, Tj = 25°C VI = 4.3V, IO = 50mA, Tj = 25°C IO = 1 to 50mA, Tj = 25°C 0.7IO = 0mA, Tj = 25°C VI = 5.5 to 7.5V, f = 120Hz 0.23 f = 10Hz to 100kHz Tj = −30 to +125°C 0.2 0.3 4.32 0.12 Parameter Symbol Conditions Min Typ Max Output voltage Line regulation Load regulation Minimum input/output voltage difference Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the characteristic value drift due to the chip junction temperature rise can be ignored. Note 2) Unless otherwise specified, VI = 5.5V , IO = 20mA and CO = 10µF. Bias current Ripple rejection ratio Output noise voltage Output voltage temperature coefficient Unit VO V REGIN mV REGL mV mV VDIF(min) V V mAIBias dBRR µVVno mV/°C∆VO/Ta 5.25Tj = 25°C VI = 5.5 to 11V, Tj = 25°C 40IO = 1 to 40mA, Tj = 25°C 0.07VI = 4.8V, IO = 20mA, Tj = 25°C VI = 4.8V, IO = 50mA, Tj = 25°C IO = 1 to 50mA, Tj = 25°C 0.7IO = 0mA, Tj = 25°C VI = 6 to 8V, f = 120Hz 0.25 f = 10Hz to 100kHz Tj = −30 to +125°C 0.2 0.3 4.8 0.12 4.5 Parameter Symbol Conditions Min Typ Max Output voltage Line regulation Load regulation Minimum input/output voltage difference Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the characteristic value drift due to the chip junction temperature rise can be ignored. Note 2) Unless otherwise specified, VI = 6V , IO = 20mA and CO = 10µF. Bias current Ripple rejection ratio Output noise voltage Output voltage temperature coefficient Unit VO V REGIN mV REGL mV mV VDIF(min) V V mAIBias dBRR µVVno mV/°C∆VO/Ta 6.246Tj = 25°C VI = 6.5 to 12V, Tj = 25°C 45IO = 1 to 40mA, Tj = 25°C 0.07VI = 5.8V, IO = 20mA, Tj = 25°C VI = 5.8V, IO = 50mA, Tj = 25°C IO = 1 to 50mA, Tj = 25°C 0.7IO = 0mA, Tj = 25°C VI = 7 to 9V, f = 120Hz 0.3 f = 10Hz to 100kHz Tj = −30 to +125°C 0.2 0.3 1.2 5.7651 0.13 5.5 105 Parameter Symbol Conditions Min Typ Max Output voltage Line regulation Load regulation Minimum input/output voltage difference Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the characteristic value drift due to the chip junction temperature rise can be ignored. Note 2) Unless otherwise specified, VI = 7V , IO = 20mA and CO = 10µF. Bias current Ripple rejection ratio Output noise voltage Output voltage temperature coefficient Unit

I Electrical Characteristics at Ta = 25°C (continued)

  • AN8007, AN8007M (7V type)
  • AN8008, AN8008M (8V type)
  • AN8085, AN8085M (8.5V type) VO V REGIN mV REGL mV mV VDIF(min) V V mAIBias dBRR µVVno mV/°C∆VO/Ta 7.287Tj = 25°C VI = 7.5 to 13V, Tj = 25°C 50IO = 1 to 40mA, Tj = 25°C 0.07VI = 6.8V, IO = 20mA, Tj = 25°C VI = 6.8V, IO = 50mA, Tj = 25°C IO = 1 to 50mA, Tj = 25°C 0.7IO = 0mA, Tj = 25°C VI = 8 to 10V, f = 120Hz 0.35 f = 10Hz to 100kHz Tj = −30 to +125°C 0.2 0.3 1.3 6.7250 0.13 6.5 120 Parameter Symbol Conditions Min Typ Max Output voltage Line regulation Load regulation Minimum input/output voltage difference Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the characteristic value drift due to the chip junction temperature rise can be ignored. Note 2) Unless otherwise specified, VI = 8V , IO = 20mA and CO = 10µF. Bias current Ripple rejection ratio Output noise voltage Output voltage temperature coefficient Unit VO V REGIN mV REGL mV mV VDIF(min) V V mAIBias dBRR µVVno mV/°C∆VO/Ta yp 8.328Tj = 25°C VI = 8.5 to 14V, Tj = 25°C 55IO = 1 to 40mA, Tj = 25°C 0.07VI = 7.8V, IO = 20mA, Tj = 25°C VI = 7.8V, IO = 50mA, Tj = 25°C IO = 1 to 50mA, Tj = 25°C 0.7IO = 0mA, Tj = 25°C VI = 9 to 11V, f = 120Hz 0.4 f = 10Hz to 100kHz Tj = −30 to +125°C 0.2 0.3 1.3 7.6849 0.14 7.5 135 Parameter Symbol Conditions Min Typ Max Output voltage Line regulation Load regulation Minimum input/output voltage difference Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the characteristic value drift due to the chip junction temperature rise can be ignored. Note 2) Unless otherwise specified, VI = 9V , IO = 20mA and CO = 10µF. Bias current Ripple rejection ratio Output noise voltage Output voltage temperature coefficient Unit VO V REGIN mV REGL mV mV VDIF(min) V V mAIBias dBRR µVVno mV/°C∆VO/Ta yp 8.848.50Tj = 25°C VI = 9 to 14.5V, Tj = 25°C 60IO = 1 to 40mA, Tj = 25°C 0.07VI = 8.3V, IO = 20mA, Tj = 25°C VI = 8.3V, IO = 50mA, Tj = 25°C IO = 1 to 50mA, Tj = 25°C 0.8IO = 0mA, Tj = 25°C VI = 9.5 to 11.5V, f = 120Hz 0.43 f = 10Hz to 100kHz Tj = −30 to +125°C 0.2 0.3 1.4 8.1648 0.14 8.3 140 Parameter Symbol Conditions Min Typ Max Output voltage Line regulation Load regulation Minimum input/output voltage difference Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the characteristic value drift due to the chip junction temperature rise can be ignored. Note 2) Unless otherwise specified, VI = 9.5V , IO = 20mA and CO = 10µF. Bias current Ripple rejection ratio Output noise voltage Output voltage temperature coefficient Unit

6 SFF00007CEB

I Electrical Characteristics at Ta = 25°C (continued)

  • AN8009, AN8009M (9V type)
  • AN8010, AN8010M (10V type) VO V REGIN mV REGL mV mV VDIF(min) V V mAIBias dBRR µVVno mV/°C∆VO/Ta 9.369Tj = 25°C VI = 9.5 to 15V, Tj = 25°C 70IO = 1 to 40mA, Tj = 25°C 0.07VI = 8.8V, IO = 20mA, Tj = 25°C VI = 8.8V, IO = 50mA, Tj = 25°C IO = 1 to 50mA, Tj = 25°C 0.8IO = 0mA, Tj = 25°C VI = 10 to 12V, f = 120Hz 0.45 f = 10Hz to 100kHz Tj = −30 to +125°C 100 0.2 0.3 1.4 8.6447 0.14 150 Parameter Symbol Conditions Min Typ Max Output voltage Line regulation Load regulation Minimum input/output voltage difference Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the characteristic value drift due to the chip junction temperature rise can be ignored. Note 2) Unless otherwise specified, VI = 10V , IO = 20mA and CO = 10µF. Bias current Ripple rejection ratio Output noise voltage Output voltage temperature coefficient Unit VO V REGIN mV REGL mV mV VDIF(min) V V mAIBias dBRR µVVno mV/°C∆VO/Ta 10.410Tj = 25°C VI = 10.5 to 16V, Tj = 25°C 75IO = 1 to 40mA, Tj = 25°C 0.07VI = 9.8V, IO = 20mA, Tj = 25°C VI = 9.8V, IO = 50mA, Tj = 25°C IO = 1 to 50mA, Tj = 25°C 0.8IO = 0mA, Tj = 25°C VI = 11 to 13V, f = 120Hz 0.5 f = 10Hz to 100kHz Tj = −30 to +125°C 100 0.2 0.3 1.4 9.646 0.14 165 Parameter Symbol Conditions Min Typ Max Output voltage Line regulation Load regulation Minimum input/output voltage difference Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the characteristic value drift due to the chip junction temperature rise can be ignored. Note 2) Unless otherwise specified, VI = 11V , IO = 20mA and CO = 10µF. Bias current Ripple rejection ratio Output noise voltage Output voltage temperature coefficient Unit

Ambient temperature Ta (°C) Power dissipation PD (mW) 100 120 140 160 800 700 600 500 400 300 200 100 PD  Ta (AN80xx series) 0 5 10 15 20 Input voltage VI (V) Output voltage VO (V) VO  VI AN8010/M AN8005/M AN8002/M CO = 10µF IO = 0mA 0 1 02 03 04 05 06 07 08 09 0 1 0 0 Output current IO (mA) Output voltage VO (V) 5.3 5.2 5.1 5.0 4.9 4.8 4.7 VO  IO 50 100 300 500 1k 3k 5k 10k 30k 50k 100k Frequency f (Hz) Ripple rejection ratio RR (dB) RR  f AN8005 −40 −20 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) Output voltage VO (V) 5.3 5.2 5.1 5.0 4.9 4.8 4.7 VO  Ta AN8005 VI = 6V CO = 10µF IO = 0mA 0 2 04 06 08 0 Ambient temperature Ta (°C) Power dissipation PD (mW) 100 120 140 160 800 700 600 500 400 300 200 100 PD  Ta (AN80xxM series) Mounted on standard board glass epoxy: 20 × 20 × t1.7mm3 with Cu foil of 1cm2 or more AN8005 VI = 6V CO = 10µF

8 SFF00007CEB

I Application Circuit Example 10µF VOVI AN80xx AN80xxM Series 0.33µF

  • AN80xx and AN80xxM series have their internal gain increased in order to improve performance. When the power line on the output side is long, use a capacitor of 10µF. Also, the capacitor on the output side should be attached as close to the IC as possible.
  • When using at a low temperature, it is recommended to use the capacitors with low internal impedance (for example, tantalum capacitor) for output capacitors. I New Package Dimensions (Unit: mm)
  • SSIP003-P-0000S (Lead-free package)
  • HSIP003-P-0000Q (Lead-free package) (1.00) (1.00) 5.00±0.20 4.00±0.20 2.30±0.200.60±0.15 0.40±0.10 5.00±0.20 13.30±0.50 0.40+0.10 -0.05 1.27 1.27 0.42+0.10 -0.05 1.00+0.10 -0.20 0.40+0.10 -0.05 4.00+0.25 -0.20 2.50±0.10 4.50±0.10 1.55±0.20 2.65±0.10 (0.40) 1.50±0.10 (0.75)3.00 1.50 M0.15 0.10 0.50+0.10 -0.05 0.40+0.10 -0.05

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2001 MAR