AN8000

AN8000 PANASONIC | Alldatasheet

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The AN8000 series is 3-pin low-dropout fixed positive output monolithic voltage regulators. Since thier power consumption can be minimized, they are suitable for bat- tery stabilizing power supply and reference voltage. Thir- teen types of output voltage are available ; 2V, 2.5V , 3V , 3.5V (TO-92 only) , 4V , 4.5V , 5V , 6V , 7V , 8V , 8.5V , 9V , and 10V . n Features

• Input/output voltage difference : 0.3V (max.)
• Output current of up to 50mA
• Low bias current ; 0.6mA (typ.)
• Output voltage ; 2V , 2.5V, 3V, 3.5V (TO-92 only) , 4V, 4.5V , 5V , 6V , 7V , 8V , 8.5V , 9V , and 10V.
• Over-voltage protective circuit built-in. AN8000/AN8000M Series 3-pin Positive Output Low Dropout Voltage Regulator (50mA Type) n Block Diagram Unit:mmAN8000 Series 5.0–0.2 TO-92 Plastic Package (SSIP003-P-0000) 5.1–0.213.5–0.5 0.45 2.3–0.22.54 (Bottom View) 321 + 0.2 – 0.1 4.0–0.2 1 : Input 2 : Output 3 : GND 2.6 45˚ 1.6max. 1.8max. 3.0 1.5 123 0.48max. 0.58max. 3-pin Mini Power type Plastic Package (TO-243) (HSIP003-P-0000B) 0.44max. 4.25max. 2.6max.0.8min. Unit:mmAN8000M Series 4.6max. 1 : Output 2 : GND 3 : Input Voltage Reference Current Limiter Starter V O R 1 R 2 C OUT R 1=5kΩ C IN=0.33µF C OUT =10µFV I 231 : TO-92 : TO-243 Error Amp. 123 – +

Operating ambient temperature Storage temperature Parameter Symbol Rating n Absolute Maximum Ratings (Ta=25˚C) 100 650 * –30 to+80 –55 to+150 –55 to+125 * Mounting onto the PCB (20 × 20 × 1.7mm glass epoxy copper foil 1 cm2 or more), for AN8000M Series. AN8000 Series AN8000M Series V mA mW Unit Parameter Symbol Condition min typ max Output voltage V O 2.08 V2 Line regulation REG IN mV Load regulation REG L 20 mV mV Minimum I/O voltage difference V0.06 V mA0.6Bias current Ibias dBRipple rejection ratio RR Output noise voltage V no 0.1Output voltage temperature coefficient 0.2 0.3 1.92 0.12 Unit Tj=25˚C V I=2.5 to 8V, Tj=25˚C IO =1 to 40mA, Tj=25˚C V DIF (min.) V I=1.9V, IO =20mA, T j=25˚C V I=1.9V, IO =50mA, T j=25˚C IO =1 to 50mA, Tj=25˚C IO =0mA, T j=25˚C Note1) The specified condition Tj=25˚C means that the test should be conducted with each test time reduced (within 10ms) so that the drift in characteristic value due to a temperature rise at chip junction can be ignored. Note2) Unless otherwise specified, VI=3V, IO =20mA, C O =10µF V I=3 to 5V, f=120Hz µV mV/˚C f=10Hz to 100kHz ΔV O /Ta Tj=–30 to+125˚C n Electrical Characteristics (Ta=25˚C)

• AN8002/AN8002M (2V Type) Tj=25˚C V I=3 to 8.5V, Tj=25˚C IO =1 to 40mA, Tj=25˚C V DIF (min.) V I=2.4V, IO =20mA, T j=25˚C V I=2.4V, IO =50mA, T j=25˚C IO =1 to 50mA, Tj=25˚C IO =0mA, T j=25˚C Note1) The specified condition Tj=25˚C means that the test should be conducted with each test time reduced (within 10ms) so that the drift in characteristic value due to a temperature rise at chip junction can be ignored. Note2) Unless otherwise specified, VI=3.5V, IO =20mA, C O =10µF V I=3.5 to 5.5V, f=120Hz µVV no mV/˚C f=10Hz to 100kHz ΔV O /Ta Tj=–30 to+125˚C
• AN8025/AN8025M (2.5V Type) V O 2.6 V2.5 REG IN mV REG L 20 mV mV V0.07 V mA0.6Ibias dBRR V no 0.13 0.2 0.3 2.4 0.12 2.5 12.5 Parameter Symbol Condition min typ max Unit Output voltage Line regulation Load regulation Minimum I/O voltage difference Bias current Ripple rejection ratio Output noise voltage Output voltage temperature coefficient

V O 3.12 V3Tj=25˚C REG IN mVV I=3.5 to 9V, Tj=25˚C REG L 25 mVIO =1 to 40mA, Tj=25˚C mV V DIF (min.) V0.07V I=2.9V, IO =20mA, T j=25˚C VV I=2.9V, IO =50mA, T j=25˚C IO =1 to 50mA, Tj=25˚C mA0.6IO =0mA, T j=25˚C Note1) The specified condition Tj=25˚C means that the test should be conducted with each test time reduced (within 10ms) so that the drift in characteristic value due to a temperature rise at chip junction can be ignored. Note2) Unless otherwise specified, VI=4V, IO =20mA, C O =10µF Ibias dBV I=4 to 6V, f=120HzRR µVV no mV/˚C0.15 f=10Hz to 100kHz ΔV O /Ta Tj=–30 to+125˚C 0.2 0.3 2.88 0.12 Parameter Symbol Condition min typ max Output voltage Line regulation Load regulation Minimum I/O voltage difference Bias current Ripple rejection ratio Output noise voltage Output voltage temperature coefficient Unit

• AN8003/AN8003M (3V Type) n Electrical Characteristics (Ta=25˚C) Tj=25˚C V I=4.5 to 10V, Tj=25˚C IO =1 to 40mA, Tj=25˚C V DIF (min.) V I=3.8V, IO =20mA, T j=25˚C V I=3.8V, IO =50mA, T j=25˚C IO =1 to 50mA, Tj=25˚C IO =0mA, T j=25˚C Note1) The specified condition Tj=25˚C means that the test should be conducted with each test time reduced (within 10ms) so that the drift in characteristic value due to a temperature rise at chip junction can be ignored. Note2) Unless otherwise specified, VI=5V, IO =20mA, C O =10µF V I=5 to 7V, f=120Hz µVV no mV/˚C f=10Hz to 100kHz ΔV O /Ta Tj=–30 to+125˚C
• AN8004/AN8004M (4V Type) V O 4.16 V4 REG IN mV REG L 30 mV mV V0.07 V mA0.6 Parameter Symbol Condition min typ max Output voltage Line regulation Load regulation Minimum I/O voltage difference Bias current Ripple rejection ratio Output noise voltage Output voltage temperature coefficient Unit Ibias dBRR V no 0.2 0.2 0.3 3.84 0.12 3.5 Tj=25˚C V I=4 to 9.5V, Tj=25˚C IO =1 to 40mA, Tj=25˚C V DIF (min.) V I=3.4V, IO =20mA, T j=25˚C V I=3.4V, IO =50mA, T j=25˚C IO =1 to 50mA, Tj=25˚C IO =0mA, T j=25˚C Note1) The specified condition Tj=25˚C means that the test should be conducted with each test time reduced (within 10ms) so that the drift in characteristic value due to a temperature rise at chip junction can be ignored. Note2) Unless otherwise specified, VI=4.5V, IO =20mA, C O =10µF V I=4.5 to 6.5V, f=120Hz µVV no mV/˚C f=10Hz to 100kHz ΔV O /Ta Tj=–30 to+125˚C
• AN8035/AN8035M (3.5V Type) V O 3.64 V3.5 REG IN mV REG L 30 mV mV V0.07 V mA0.6Ibias dBRR V no 0.2 0.2 0.3 3.36 0.12 3.5 Parameter Symbol Condition min typ max Output voltage Line regulation Load regulation Minimum I/O voltage difference Bias current Ripple rejection ratio Output noise voltage Output voltage temperature coefficient Unit

Tj=25˚C V I=5 to 10.5V, Tj=25˚C IO =1 to 40mA, Tj=25˚C V DIF (min.) V I=4.3V, IO =20mA, T j=25˚C V I=4.3V, IO =50mA, T j=25˚C IO =1 to 50mA, Tj=25˚C IO =0mA, T j=25˚C Note1) The specified condition Tj=25˚C means that the test should be conducted with each test time reduced (within 10ms) so that the drift in characteristic value due to a temperature rise at chip junction can be ignored. Note2) Unless otherwise specified, VI=5.5V, IO =20mA, C O =10µF V I=5.5 to 7.5V, f=120Hz µVV no mV/˚C f=10Hz to 100kHz ΔV O /Ta Tj=–30 to+125˚C n Electrical Characteristics (Ta=25˚C)

• AN8045/AN8045M (4.5V Type) V O 4.68 V4.5 REG IN mV REG L 35 mV mV V0.07 V mA0.7Ibias dBRR V no 0.23 0.2 0.3 4.32 0.12 Parameter Symbol Condition min typ max Output voltage Line regulation Load regulation Minimum I/O voltage difference Bias current Ripple rejection ratio Output noise voltage Output voltage temperature coefficient Unit T j=25˚C V I=5.5 to 11V, Tj=25˚C IO =1 to 40mA, Tj=25˚C V DIF (min.) V I=4.8V, IO =20mA, T j=25˚C V I=4.8V, IO =50mA, T j=25˚C IO =1 to 50mA, Tj=25˚C IO =0mA, T j=25˚C Note1) The specified condition Tj=25˚C means that the test should be conducted with each test time reduced (within 10ms) so that the drift in characteristic value due to a temperature rise at chip junction can be ignored. Note2) Unless otherwise specified, VI=6V, IO =20mA, C O =10µF V I=6 to 8V, f=120Hz µVV no mV/˚C f=10Hz to 100kHz ΔV O /Ta Tj=–30 to+125˚C
• AN8005/AN8005M (5V Type) V O 5.2 V5 REG IN mV REG L 40 mV mV V0.07 V mA0.7Ibias dBRR V no 0.25 0.2 0.3 4.8 0.12 4.5 Parameter Symbol Condition min typ max Output voltage Line regulation Load regulation Minimum I/O voltage difference Bias current Ripple rejection ratio Output noise voltage Output voltage temperature coefficient Unit T j=25˚C V I=6.5 to 12V, Tj=25˚C IO =1 to 40mA, Tj=25˚C V DIF (min.) V I=5.8V, IO =20mA, T j=25˚C V I=5.8V, IO =50mA, T j=25˚C IO =1 to 50mA, Tj=25˚C IO =0mA, T j=25˚C Note1) The specified condition Tj=25˚C means that the test should be conducted with each test time reduced (within 10ms) so that the drift in characteristic value due to a temperature rise at chip junction can be ignored. Note2) Unless otherwise specified, VI=7V, IO =20mA, C O =10µF V I=7 to 9V, f=120Hz µVV no mV/˚C f=10Hz to 100kHz ΔV O /Ta Tj=–30 to+125˚C
• AN8006/AN8006M (6V Type) V O 6.24 V6 REG IN mV REG L 45 mV mV V0.07 V mA0.7Ibias dBRR V no 0.3 0.2 0.3 1.2 5.7651 0.13 5.5 105 Parameter Symbol Condition min typ max Output voltage Line regulation Load regulation Minimum I/O voltage difference Bias current Ripple rejection ratio Output noise voltage Output voltage temperature coefficient Unit

Tj=25˚C V I=7.5 to 13V, Tj=25˚C IO =1 to 40mA, Tj=25˚C V DIF (min.) V I=6.8V, IO =20mA, T j=25˚C V I=6.8V, IO =50mA, T j=25˚C IO =1 to 50mA, Tj=25˚C IO =0mA, T j=25˚C Note1) The specified condition Tj=25˚C means that the test should be conducted with each test time reduced (within 10ms) so that the drift in characteristic value due to a temperature rise at chip junction can be ignored. Note2) Unless otherwise specified, VI=8V, IO =20mA, C O =10µF V I=8 to 10V, f=120Hz µVV no mV/˚C f=10Hz to 100kHz ΔV O /Ta Tj=–30 to+125˚C n Electrical Characteristics (Ta=25˚C)

• AN8007/AN8007M (7V Type) V O 7.28 V7 REG IN mV REG L 50 mV mV V0.07 V mA0.7Ibias dBRR V no 0.35 0.2 0.3 1.3 6.7250 0.13 6.5 120 Parameter Symbol Condition min typ max Output voltage Line regulation Load regulation Minimum I/O voltage difference Bias current Ripple rejection ratio Output noise voltage Output voltage temperature coefficient Unit T j=25˚C V I=8.5 to 14V, Tj=25˚C IO =1 to 40mA, Tj=25˚C V DIF (min.) V I=7.8V, IO =20mA, T j=25˚C V I=7.8V, IO =50mA, T j=25˚C IO =1 to 50mA, Tj=25˚C IO =0mA, T j=25˚C Note1) The specified condition Tj=25˚C means that the test should be conducted with each test time reduced (within 10ms) so that the drift in characteristic value due to a temperature rise at chip junction can be ignored. Note2) Unless otherwise specified, VI=9V, IO =20mA, C O =10µF V I=9 to 11V, f=120Hz µVV no mV/˚C f=10Hz to 100kHz ΔV O /Ta Tj=–30 to+125˚C
• AN8008/AN8008M (8V Type) V O 8.32 V8 REG IN mV REG L 55 mV mV V0.07 V mA0.7Ibias dBRR V no 0.4 0.2 0.3 1.3 7.6849 0.14 7.5 135 Parameter Symbol Condition min typ max Output voltage Line regulation Load regulation Minimum I/O voltage difference Bias current Ripple rejection ratio Output noise voltage Output voltage temperature coefficient Unit T j=25˚C V I=9 to 14.5V, Tj=25˚C IO =1 to 40mA, Tj=25˚C V DIF (min.) V I=8.3V, IO =20mA, T j=25˚C V I=8.3V, IO =50mA, T j=25˚C IO =1 to 50mA, Tj=25˚C IO =0mA, T j=25˚C Note1) The specified condition Tj=25˚C means that the test should be conducted with each test time reduced (within 10ms) so that the drift in characteristic value due to a temperature rise at chip junction can be ignored. Note2) Unless otherwise specified, VI=9.5V, IO =20mA, C O =10µF V I=9.5 to 11.5V, f=120Hz µVV no mV/˚C f=10Hz to 100kHz ΔV O /Ta Tj=–30 to+125˚C
• AN8085/AN8085M (8.5V Type) V O 8.84 V8.50 REG IN mV REG L 60 mV mV V0.07 V mA0.8Ibias dBRR V no 0.43 0.2 0.3 1.4 8.1648 0.14 8.3 140 Parameter Symbol Condition min typ max Output voltage Line regulation Load regulation Minimum I/O voltage difference Bias current Ripple rejection ratio Output noise voltage Output voltage temperature coefficient Unit

Tj=25˚C V I=9.5 to 15V, Tj=25˚C IO =1 to 40mA, Tj=25˚C V DIF (min.) V I=8.8V, IO =20mA, T j=25˚C V I=8.8V, IO =50mA, T j=25˚C IO =1 to 50mA, Tj=25˚C IO =0mA, T j=25˚C Note1) The specified condition Tj=25˚C means that the test should be conducted with each test time reduced (within 10ms) so that the drift in characteristic value due to a temperature rise at chip junction can be ignored. Note2) Unless otherwise specified, VI=10V, IO =20mA, C O =10µF V I=10 to 12V, f=120Hz µVV no mV/˚C f=10Hz to 100kHz ΔV O /Ta Tj=–30 to+125˚C n Electrical Characteristics (Ta=25˚C)

• AN8009/AN8009M (9V Type) V O 9.36 V9 REG IN mV REG L 70 mV mV V0.07 V mA0.8Ibias dBRR V no 0.45 100 0.2 0.3 1.4 8.6447 0.14 150 Parameter Symbol Condition min typ max Output voltage Line regulation Load regulation Minimum I/O voltage difference Bias current Ripple rejection ratio Output noise voltage Output voltage temperature coefficient Unit T j=25˚C V I=10.5 to 16V, Tj=25˚C IO =1 to 40mA, Tj=25˚C V DIF (min.) V I=9.8V, IO =20mA, T j=25˚C V I=9.8V, IO =50mA, T j=25˚C IO =1 to 50mA, Tj=25˚C IO =0mA, T j=25˚C Note1) The specified condition Tj=25˚C means that the test should be conducted with each test time reduced (within 10ms) so that the drift in characteristic value due to a temperature rise at chip junction can be ignored. Note2) Unless otherwise specified, VI=11V, IO =20mA, C O =10µF V I=11 to 13V, f=120Hz µVV no mV/˚C f=10Hz to 100kHz ΔV O /Ta Tj=–30 to+125˚C
• AN8010/AN8010M (10V Type) V O 10.4 V10 REG IN mV REG L 75 mV mV V0.07 V mA0.8Ibias dBRR V no 0.5 100 0.2 0.3 1.4 9.646 0.14 165 Parameter Symbol Condition min typ max Output voltage Line regulation Load regulation Minimum I/O voltage difference Bias current Ripple rejection ratio Output noise voltage Output voltage temperature coefficient Unit 10µF V outV in AN8000 AN8000M 0.33µF The AN8000/AN8000M series has IC internal gain increased in order to improve performance. When the power line on the output side is long, use a capacitor of 10µF. For the capacitor on the output side, attach it as close to the IC as possible. When using at a low temperature, it is recommended to use the capacitors with low internal impedance (for example, tantalum capacitor) for output capacitors. n Application Circuit

Ambient Temperature Ta (˚C) Power Dissipation PD (mW) 100 120 140 160 800 700 600 500 400 300 200 100 PD –Ta (AN8000 Series) 0 5 10 15 20 Input Voltage VI (V) Output Voltage VO (V) V O –V I AN8010/M AN8005/M AN8002/M C O =10µF IO =0mA 0 1 02 03 04 05 06 07 08 09 0 1 0 0 Output Current VO (mA) Output Voltage VO (V) 5.3 5.2 5.1 5.0 4.9 4.8 4.7 V O – IO 50 100 300 500 1k 3k 5k 10k 30k 50k 100k Frequency f (Hz) Ripple Rejection Ratio RR (dB) RR– f AN8005 –40 –20 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta (˚C) Output Voltage VO (V) 5.3 5.2 5.1 5.0 4.9 4.8 4.7 V O –Ta AN8005 V I=6V C O =10µF IO =0mA 0 2 04 06 08 0 Ambient Temperature Ta (˚C) Power Dissipation PD (mW) 100 120 140 160 800 700 600 500 400 300 200 100 PD –Ta (AN8000M Series) Mounting onto PCB 20 × 20 × 7mm Glass Epoxy PCB, Copper foil 1cm 2 or more() AN8005 V I=6V C O =10µF