AN6150

AN6150 PANASONIC | Alldatasheet

Document overview

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Technical content

The AN6150 is an integrated circuit designed for telephone speech network. It has the basic function necessary to apply a sound signal onto the line and is applicable for various types of handsets. n Features

• Wide operating voltage range : 3 to 11.5V
• Built-in amplifiers for “Dial Tone” and “DTMF”
• Amplifier output switchable.
• Each amplifier gain automatically changeable depending on line current.
• Various types of microphones and receivers are available. AN6150 Speech Network Circuit 19.2–0.3 1.22–0.25 3 to 15˚ Unit : mm 6.2–0.3 0.5–0.12.54 5.2–0.25 3.05–0.25 7.62–0.25 0.3 + 0.1 – 0.05 1.1–0.25 16-pin DIL Plastic Package (DIP016-P-0300D) 16 15 14 13 12 11 10 9 1 2 34 GND V2 V1 AP 56 7 8 RO1 RO2 RF RI V L VLC ST SF MIC DT DM KT V-I Control REG REG Current Check ATT ATT ATT SEND Main Amp. MIC Pre- Amp. DTMF Pre- Amp. REC Pre- Amp. REC Main Amp. KT Pre- Amp. Logic n Block Diagram

Pin N o. Pin nam e G N D 2V R EG . 1V R EG . A TT control R EC output R EC output R EC filter R EC input Pin N o. Pin nam e K EY In TO N E input D ial m ute SW D TM F input M IC input Transm ission filter SID E tone LIN filter LIN V L IL PD Topr Tstg Line voltage Line current Pow er dissipation (Ta=60˚C ) O perating am bient tem perature Storage tem perature V m A m W n A bsolute M axim um R atings (Ta=25˚C ) 14.4 135 1380 –30 to + 75 –55 to + 150 Param eter Sym bol R ating U nit n Electrical C haracteristics (IL=40m A , fin=1kH z, Ta=25˚C ) R eceive System R eceiver gain *1 M ax. receiver level *1 R eceiver auto pad *1 G V – R –2 dB mV i=–45dB m R eceiver output distortion *1 TH D – R %V i=–45dB m V O – R dB mTH D =5% ΔA P– R –3 dBV i=–45dB m , D IL=100 to 20m A –5.5 –4.5 – 0.5 K EY IN TO N E gain *1 G V –K T –22.5 dB mV i=–40dB m , D ial M ute SW – O N –25 –20 Transm ission System Transm ission gain *2 M ax. transm ission level *2 Transm ission auto pad *2 G V –T –2 dB mV i=–45dB m Transm ission output distortion *2 TH D –T %V i=–45dB m V O –T dB mTH D =5% ΔA P– T –3.5 dBV i=–45dB m , D IL=100 to 20m A –6.5 –2.2 2.8 D TM F gain *2 G V – D T –6 dB mV i=–35dB m , D ial M ute SW – O N –8 –4 D TM F output distortion *2 TH D – D T 1 %V i=–35dB m , D ial M ute SW – O N 5 D TM F auto pad *2 ΔA P– D T –4 dBV i=–35dB m , D IL=100 to 20m A –6 –2 Pow er Supply D C line voltage (1) Internal supply voltage V L – 1 3.6 VIL=12m A D C line voltage (2) 5.4V L – 2 VIL=127m A V C C VIL=12m A 2.4 1.7 7.8 2.0 2.3 10.2 *1 C onnect the 1kΩ load betw een Pins5 and 6 for m easurem ent. *2 C onnect the 600Ω receiver im pedance betw een Pins16 and 1 and m easure it at the receiver side. Param eter Sym bol C ondition m in typ m ax U nit

n Electrical C haracteristics (cont.) (IL=40m A , fin=1kH z, Ta=25˚C ) D ial M ute input D ial m ute O FF Input current (1) V D M –H V C C V D ial m ute O N V D M –L V ID M –H µAV D M =V C C 0.8 –2.0 0.1 0.3 2.0 Input current (2) ID M –L µAV D M =0V –2.0 – 0.2 – 0.02 M ute K .T. m ute *1, 4 D TM F m ute *2, 4 M –K T dBV i=–15dB V , D ial m ute SW – O FF M IC m ute *2, 4 M –T dBV i=–40dB V , D ial m ute SW – O N M –D T dBV i=–28dB V , D ial m ute SW – O FF Pow er Supply A C im pedance (1)*3, 4 ZA C –1 800 ΩIL=30m A , fin=1kH z A C im pedance (2)*3, 4 ZA C –2 ΩIL=90m A , fin=1kH z 100µF 820Ω 400 400 670 620 800 R eceiver System K . T. output distortion *1, 4 TH D –K T %V i=–42dB V , IL=40m A 1 *1 C onnect the 1kΩ load betw een Pins5 and 6 for m easurem ent *2 C onnect the 600Ω receiver im pedance betw een Pins16 and 1 m easure it at the receiver side. *3 C onnect betw een Pins16 and 1 for m easurem ent. *4 C haracteristics above are of reference valuse for design but not guaranteed values. Param eter Sym bol C ondition m in typ m ax U nit

υ in = –37dB V f =1kH z υ in = –47dB V f =1kH z Line C urrent IL (m A ) Line V oltage V L (V ) V L– IL 800 700 600 500 400 300 200 100 00.1 0.5 1 5 10 Frequency f (kH z) A C Im pedance ZA C (Ω ) ZA C – f 0 0 40 80 120 160 Line C urrent IL (m A ) R eceiver A uto Pad V out (R EC ) (dB V ) D istortion TH D (% ) V out (R EC ), TH D – IL –10 –12 –14 00 40 80 120 160 Il.=50m AIl.=20m A Il.=80m A Line C urrent IL (m A ) D TM F A uto Pad V out (D TM F) (dB V ) D istortion TH D (% ) V out (D TM F), TH D – IL –10 –12 –14 00 40 80 120 160 Line C urrent IL (m A ) Transm ission A uto Pad V out (M IC ) (dB V ) D istortion TH D (% ) V out (M IC ), TH D – IL –10 –12 –14 00 40 80 120 160 TH D V out TH D V out (M IC ) TH D V out (D TM F) υ in = –47dB V f =1kH z n Characteristics Curve

• In case of using ceram ic receiver D iode B ridge T K ey in toneD TM FE C M C eram ic A N 6150 L2 R 14 R 10 R 9 R 11 R 1 SW 1 SW 2 R 12 R 13 R 8 R 7 R 3 R 2 R 4R 5 C 11 C 1 C 10 C 9 C 8 C 7 C 6 100µF 47µF 470µF C 2 100µF 0.022µF 0.0022µF 0.068µF receiver 0.068µF C 5 C 4 C 3 0.068µF 0.068µF 0.047µF 820Ω 2.7kΩ 9.1kΩ 9.1 kΩ 620 Ω 62Ω 4.7kΩ 12kΩ
• In case of using low im pedance receiver D iode B ridge T R K ey in toneD TM FE C M C eram ic A N 6150 L2 R 14 R 10 R 9 R 11 R 1 SW 1 SW 2 R 12 R 13 R 8 R 7 R 3 R 2 R 4R 5 R 15 C 11 C 1 C 10 C 9 C 8 C 7 C 6 100µF 47µF 470µF C 2 100µF 0.022µF 0.0022µF 0.068µF 0.068µF C 5 C 4 C 3 0.068µF 0.068µF 0.047µF 820Ω 2.7kΩ 9.1kΩ 9.1 kΩ 620 Ω 62Ω 4.7kΩ 12kΩ n Application Circuits