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Revision: Rev. 1.0 2014-06-15 Single -Chip SiGe Transceiver Chipset for V -band Backhaul Applications from 57 to 64 GHz
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© 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non -infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Transceiver for V-Band Backhaul Applications from 57 to 64 GHz Application Note Revision History: 2014-06-15 Previous Revision: Page Subjects (major changes since last revision) Trademarks of Infineon Technologies AG A-GOLD™, BlueMoon™, COMNEON™, CONVERGATE™, COSIC™, C166™, CROSSAVE™, CanPAK™, CIPOS™, CoolMOS™, CoolSET™, CONVERPATH™, CORECONTROL™, DAVE™, DUALFALC™, DUSLIC™, EasyPIM™, EconoBRIDGE ™, EconoDUAL™, EconoPACK™, EconoPIM™, E -GOLD™, EiceDRIVER™, EUPEC™, ELIC™, EPIC™, FALC™, FCOS™, FLEXISLIC™, GEMINAX™, GOLDMOS™, HITFET™, HybridPACK™, INCA™, ISAC™, ISOFACE™, IsoPACK™, IWO RX™, M -GOLD™, MIPAQ™, ModSTACK™, MUSLIC™, my -d™, NovalithIC™, OCTALFA LC™, OCTAT™, OmniTune™, OmniVia™, OptiMOS™, OPTIVERSE™, ORIGA™, PROFET™, PRO -SIL™, PrimePACK™, QUADFALC™, RASIC™, ReverSave™, SatRIC™, SCEPTRE™, SCOUT™, S -GOLD™, SensoNor™, SEROCCO™, SICOFI™, SIEGET™, SINDRION™, SLIC™, SMARTi™, SmartLEWIS™, SMINT™, SOCRATE S™, TEMPFET™, thinQ!™, TrueNTRY™, TriCore™, TRENCHSTOP™, VINAX™, VINETIC™, VIONTIC™, WildPass™, X-GOLD™, XMM™, X-PMU™, XPOSYS™, XWAY™. Other Trademarks AMBA™, ARM™, MULTI -ICE™, PRIMECELL™, REALVIEW™, THUMB™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOS AR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT -iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexR ay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO. OmniVision™ of OmniVision Technologies, Inc. Openwave™ Ope nwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2009-10-19
Transceiver for V-Band Backhaul Applications from 57 to 64 GHz List of Content, Figures and Tables Table of Content
Transceiver for V-Band Backhaul Applications from 57 to 64 GHz List of Content, Figures and Tables List of Tables
Transceiver for V-Band Backhaul Applications from 57 to 64 GHz Introduction
1 Introduction
The smartphone revolution has led to a growing demand in mobile data traffic which subsequently has resulted in increased throughput per user. The high mobile data requirements has led to the deployment of advanced 4G services like Long Term Evolution (LTE) by the mobil e network operators and this is expected to grow further in the coming years. LTE and LTE Advanced will provide users with higher data rates which will increase data traffic drastically. The increasing data rate puts an enormous burden on the network opera tor’s backhaul networks. The bulk of today’s basestation infrastructure is not ready to support the required high data throughput using the existing microwave backhaul techniques. The connection between the basestations is usually planned for lower data ra tes up to 100 MBit/s which has to be increased significantly to meet the demands for LTE systems. Though optical fiber based backhaul networks can handle a huge data throughput, they are faced with the challenge of easy and cost -effective deployment. The c oncept of small cells make the deployment of fiber optic based solution even complex and expensive and sometimes even not feasible. This is where the wireless backhaul technology comes into place. A new solution using millimeter wave backhaul opens upto 10 GHz bandwidth in the E -band (71-76 and 81-86 GHz) and 7 GHz bandwidth in the V -band (57– 64 GHz). The high bandwidth and channel spacing offered at these frequencies enables data rates higher than 1 Gbps for video and data service even with simple modulation schemes. Infineon has developed a complete family of packaged RF Transceivers for mobile backhaul applications – supporting both the V -band and E -band frequencies with its BGT60, BGT70 and BGT80 ICs. The modular approach followed by Infineon provides same package dimensions and RF footprint for all the three chipsets which enable customers to quickly setup a radio system at any of the above allowed frequency bands. The highly integrated ICs help to eliminate discrete components, thereby simplifying the customer’s system design and time-to-market. This also helps to reduce the total cost of the mmWave backhaul solutions . The ICs are designed in Infineon´s advanced SiGe:C (Silicon Germanium) technology with device transit frequency of 200 GHz, that enabl e integration of several mmWave building blocks such as Power Amplifier (PA), Low Noise Amplifier (LNA), Up - and Down -Convertor, Programmable Gain Amplifier (PGA), Voltage Controlled Oscillator (VCO) and more with high performance into a single chip. This technology is proven and fully qualified for other Infineon millimeter - and microwave chipsets already. Furthermore, Infineon is the leading company to house these single chipsets into a plastic Embedded Wafer Level Ball Grid Array (eWLB) package which can be processed in standard SMT flow. In this application note, the performance of Infineon’s fully integrated V-Band Transceiver BGT 60 for 57 to 64 GHz on its evaluation board is described in detail. All the measurements presented in this application note are done port-to-port on Infineon’s EVB i.e. Board losses (~2dB) are not dembedded . The measurements are done at backside chip temperature of 45°C. This also causes loss of additional 1dB. For the specifications of BGT60 transceiver IC, please refer the datasheet of BGT60.
Transceiver for V-Band Backhaul Applications from 57 to 64 GHz About V-Band Backhaul Application
2 About V-Band Backhaul Application
Solutions using millimeter wave backhaul in the V-Band of 57-64 GHz open up 7 GHz bandwidth for a full- duplex wireless radio link. It allows gigabit data rates with the simplest modulation scheme which minimize linearity requirements of the transmitter power amplifier (PA) . With more spectrally efficient modulations, data rates even higher than 10 Gbps can be achieved. Antennas at high frequencies become compact and can provide higher gain than their contemporar ies at lower microwave frequencies which can help improve the link condition. A number of requirements for V-Band communication are specified by ETSI within the document ETSI 302 217-3 “Fixed Radio Systems; characteristics and requirements for p oint-to-point equipment and antennas; Part 3: Equipment operating in frequency bands where both frequency coordinated or uncoordinated deployment might be applied; Harmonizing EN covering the essential requirements of the article 3.2 of the R&TTE directive”. The high atmospheric attenuation around the 60 GHz band due to oxygen absorbtion helps to provide a strong immunity to interference and allows a higher frequency reuse. The ETSI specifications recommend a minimum an tenna gain of 30 dBi. For the radio channel arrangements and nominal bandwidth, two different alternatives are considered. The first alternative is defined as “Free system bandwidth, occupying up to the whole band” and In the second case the maximum channe l bandwidth is limited to 2.5 GHz with the channel selection defined as (n*50 MHz), where n = [1….50]. Maximum equivalent i sotropically radiated power (EIRP) is specified to 55 dBm and a maximum transmitter output power of +10 dBm is specified. A large channel bandwidth with a higher modulation scheme eventually demands higher carrier-to-noise ratio (CNR) which imposes stringent requirements on the high frequency transmitter and receiver design. For example, a typical receiver with 12dB noise figure at th e antenna port in a V-Band radio system using 500MHz channel bandwidth and 16 -QAM modulation would need about the same minimum receiver signal power level as a system using 1250 MHz BW and FSK to ensure the bit error rate (BER) of 1E-6. The radio link can be either in full -duplex (FDD) or half -duplex (TDD) system configuration. In a FDD V-Band system, any two blocks of frequencies between 57 -64 GHz are used for transmission or reception, depending upon the availability of Diplexers. In a TDD system, one BGT60 chip is installed on each side of the link stations. Each chip in a base station can work in the TX or RX mode independently.
Transceiver for V-Band Backhaul Applications from 57 to 64 GHz Infineon V-Band BGT60 RF Front-End Transceiver Chipset
3 Infineon V-Band BGT60 RF Front-End Transceiver Chipset
3.1 Key Features
BGT60 covers the V-Band frequency range from 57 to 64 GHz Fabricated with Infineon’s advanced Silicon-Germanium (SiGe) technology Housed in Infineon’s Embedded Wafer Level Ball-Grid Array (eWLB) Package BGT60 can be programmed via SPI interface to work either in transmit (TX) or/and receive (RX) mode Zero IF – differential I/Q interface – direct conversion architecture Differential RF transmit output signaling Differential RF receive input signaling Differential intermediate frequency I/Q signaling Peak detector at VGA input at transmit path Peak detector at PA output at transmit path Built-in temperature sensor SPI interface ESD protected device BITE (Built-In-Test Equipment) for self-test and calibration in production at Infineon to verify RF performance Can support TDD or FDD systems Applications: - V-Band from 57 to 64 GHz FDD or TDD systems for telecommunication applications Product Name Package Marking BGT60 PG-WFWLB-119-1 BGT60TR11
Transceiver for V-Band Backhaul Applications from 57 to 64 GHz
3.2 Description of BGT60
Currently, different mmWave system implementations based on III/V -compound semiconductor, silicon bipolar or silicon CMOS technologies have been reported. The advancements in SiGe based technologies in the last years have resulted in their increased use for applications in the mmWave regime with their successful deployment in several existing commercial mmWave applications. Infineon has a long history of research & development with SiGe based technologies and the BGT6 0 transceiver IC is designed with one of Infineons in - house advanced SiGe bipolar process. The sing le-chip transceiver chipset BGT6 0 is manufactured with Infineo n’s 200 GHz -fT SiGe-technology and applicable for telecommunication applications in the microwave and mmWave range. Infineon’s 200 GHz Silicon Germanium (SiGe) technology is proven and qualified for Millimeter (e.g. 77 GHz automotive radar) and Microwave c hipsets (e.g. 24 GHz au tomotive/industrial radar). BGT6 0 uses fully -differential direct conversion architecture for the transmitter and receiver. A Fully -differential (balanced) architecture helps to mitigate the effects of common -mode interference and RF grounding issues, which become extremely critical at higher operating frequencies. Also a differential architecture offers the advantage of reduced even -order harmonics. The direct conversion architecture simplifies the frequency up/down -conversion process and can reduce bulky and expensive off -chip filtering components. Through the direct conversion architecture of the transceiver, the interface between RF and baseband is simplified significantly compared to currently available discrete millimeter wave solutions. Furthermore, the offering of the single chip solution in a eWLB plastic package makes a major difference to the market. With the packaged chipset, customers can s ave cost and reduce the time -to-market significantly. The outstanding RF performance of SiGe technology – such as deliverable saturated output power of up to 14.5 dBm, a low receiver noise figure of 8 dB and excellent VCO phase noise performance better than -83 dBc/Hz at 100kHz offset – allow designers to implement systems with high modulation schemes up to QAM64 with a sample rate of more than 1 Giga Samples per secon d (GS/s) or simple systems with QPSK with large bandwidth through channel aggregation. ESD (Electrostatic Discharge) performance of more than 1 kV increases robustness. The low power consumption of less than 2 W for this backhaul transceiver family also allows network operators to reduce related fixed expenses. In general, Infineon’s single-chip V-Band transceiver offers customers the following advantages: - lower production cost - broadband high data rate telecommunication which enable Gbps radio link - compact single chip integration leading to much smaller form factor - excellent device performance - individual VCO centering taking into account process and temperature variation - robust design & insensitivity to interference through direct conversion architecture and fully differential topology - standard plastic package allows industrial assembly and cleaning tool to be used - product family approach with the same foot print i.e. same PCB layout possible for E -Band radios
Transceiver for V-Band Backhaul Applications from 57 to 64 GHz Typical Measurement Results
4 Typical Measurement Results
In Chapter 4, typical measurement results of the V-Band 57 to 64 GHz transceiver, BGT60 are summari zed. Please note that these measurements are performed on the Infineon evaluation board at room temperature. Table 1 Measurement Results - DC Parameters Parameter Symbol Unit Value Condition Voltage Supply Vcc V 3.300 Current Consumption - IC powered on, TX off, RX off - TX on, RX off - TX off, RX on - TX on, RX on ICoff ICTX ICRX ICTRX mA 323 550 428 635 @ max power @ max power The current values are of complete EVB. For BGT60 current consumption only please refer Datasheet. Table 2 IF Port Features and Sensor Characteristics Parameter Symbol Unit Value Condition Output Power Vs PA Peak Detector Readout Relation * PPD_PA selected via MUXout * This provides the output power level at the landing pad Pout PPD_PA (MUX out) dBm V Temperature Sensor Sensitivity Tsense mV/K 5 Load Impedance for Tsense Output Rsensload MΩ 1 single-ended IF Input Interface at TX Signaling differential IF Load Impedance IFload Ω 100 differential IF Bandwidth IFBW MHz 500 IF Lower Cutoff Frequency IFlow kHz 3 external Capacitance > 1µF required IF Higher Cutoff Frequency IFhigh MHz 500 IF Coupling on Board AC value to be specified IF Output Interface at RX Signaling differential IF Load Impedance IFload Ω 400 Differential, minimum value IF Bandwidth IFBW MHz 500 IF Lower Cutoff Frequency IFlow kHz 3 external Capacitance > 1µF required IF Higher Cutoff Frequency IFhigh MHz 500 IF Coupling on Board AC value to be specified I/Q Amplitude Imbalance IQAI dB 0.5 I/Q Phase Imbalance IQPI deg 2 7.9737 0.1867 0.8829 )_ln( t A y A yPAPPDtPout
Transceiver for V-Band Backhaul Applications from 57 to 64 GHz Typical Measurement Results Table 3 Measurement Results - Transmitter Parameter Symbol Unit Value Condition Frequency Freq GHz 57 60 64 TX Output Output Signaling differential TX-Port Load Impedance TX load Ω 100 differential TX Chain Gain GTX dB 24 29 33 From one IF port to Waveguide port Output Referred P-1dB OP-1dBTX dBm 9 11.5 11.5 differential 100 Ω load Saturated Power Psat dBm 11.6 15 14.6 differential 100 Ω load Output Referred IP3 OIP3TX dBm 16.9 20.3 15.7 differential 100 Ω load PA Control Dynamic Range P_ctrld dB 11.7 LO feed-through Suppression LOs dBc -57 before LO calibration PA Control Step P_ctrls dB 0.1 to 2 6 bits Image Rejection IMR dBc 20 w/o feedback loop Table 4 Measurement Results – LO Generation Voltage Control Sensitivity Kvco GHz/V 5 2.2 1 @TX output Phase Noise @100kHz Offset PNssb100k dBc/Hz -81 -83.6 -85 SSB @1MHz Offset PNssb1M dBc/Hz -101 -103.8 -105 SSB @10MHz Offset PNssb10M dBc/Hz -122 -124.2 -126 SSB Divider Output Power PDIVout dBm -9 differential 100 Ω load VCO Tuning Voltage Vtune V 0 5.5 single tuning port Table 5 Measurement Results - Receiver Parameter Symbol Unit Value Condition Frequency Freq GHz 57 60 64 RX Chain Input Signaling differential Conversion Gain CGdiff dB 17.4 20 22.9 differential in 400Ω load at IF Ports Double-Side-Band Noise Figure NFdsb dB 8.4 8 7.1 Input Referred P-1dB IP-1dBRX dBm -11 -12.5 -13.5 Input Referred IP3 IIP3RX dBm -2.9 -3.5 -4.9 LO Residual Power at the RX Input LOres dBm -52 RF-Port Load Impedance RFload Ω 100 differential
Transceiver for V-Band Backhaul Applications from 57 to 64 GHz Package
5 Package
5.1 BGT60 in PG-WFWLB-119-1 Package
The BGT60 chipset is in eWLB type package PG-WFWLB-119-1 with bump balls of 300µm diameter and 150µm height as shown in Figure 1. The physical dimension of 6.0 x 6.0 mm² with a bump pitch of 500 µm is shown in Figure 2. The max imum height of the package is 0.8 mm with 0.1 mm max planarity variation. The maximum variation of bump coplanarity is 80 µm. On top of the package, Pin 1 is marked by a laser marking. The product name and its production date code are also described there. Package Dimension: 6.0 mm x 6.0 mm x 0.8 mm Figure 1 Top View (left), Bottom View (right) and Side View of BGT60 in eWLB Package For mmWave applications, eWLB offers excellent electrical and thermal characteristics. With a well-engineered design, it offers a comparable loss like a bonding wire package version but has large bandwidth which is required for broadband mmW applications. Furthermore, its outstanding thermal resistance of 15 K/W ensure s its proper working even under critical environment. The BGA-like package form enables customers to use industrial standard reflow process to solder it.
Transceiver for V-Band Backhaul Applications from 57 to 64 GHz Package Figure 2 Dimension of eWLB Package PG-WFWLB-119-1 for BGT60 (left: top view; center: side view; right: bottom view)
5.2 Pin Definition and Function
Figure 3 shows the top view of BGT60 package eWLB PG-WFWLB-119-1 with the pin number assignment. The function of each pin is described in Table 6 below. The ground pins (in black color) are used n ot only for RF and DC but also as a heat sinker for the BGT60 chipset on the PCB. It has to be noted that the four edge ground pins A1, A12, M1 and M12 are in fact not used in the transceiver IC but it is recommended to connect them to the RF ground for mechanical stability. : VCC A B C D E F G H J K L M Top View : GND & Thermal Pads : TX IF Ports : TX RF Ports : RX IF Ports : RX RF Ports : Sensor Output Ports : VCO/PLL Ports : SPI Ports VCC VCC VCC VCC VCC VCC VCC VCC VCC VCC GND GND GND GND GND GNDGND GND GND GNDGND GND GND GND GNDGND GND GNDGND GND GND GNDGND TX_OutxRX Inx TX_ OutRX In GND GND GNDGND GND GND GND GND GND GNDGND GND GND GND GNDGND GND GND GND GND GND GNDGND GND GND GND GND GND GND GND GND GND GND GND GND GND IFx_I_RX IF_I_RX IFx_Q_RX IF_Q_RX IFx_Q_TX IF_Q_TX IFx_I_TX IF_I_TX VCC VCC VCC VCC VCC VCC VCC VCCVCC VCCSP1 SP1 SP2 SP2 SP3 SP3SP4 SP4 Vtune Vtune Divx DivxD_MOD D_MOD MUXout MUXout Div Div Temp Temp Figure 3 Pin Number Assignment of BGT60 package eWLB PG-WFWLB-119-1 (Top View)
Transceiver for V-Band Backhaul Applications from 57 to 64 GHz Package Table 6 Pin Definition and Function Pin No. Name Function A3, A4, A11, B4, B10, C3, F10, F11, F12, G10, G11, G12, L10, M11 Vcc DC supply for the transceiver chip – 3.3V K3, L3, M2, M3 Vcc_Temp Supply voltage for the temperature sensor – 3.3V F1, F2 Vcc_VCO Supply voltage for the VCO – 3.3V E1, E2 Vtune VCO tuning voltage D1, D2 SP1 SPI Enable - chip select C1, C2 SP2 SPI Dataout - SPI data sequence (device control board) B1, B2 SP3 SPI Data - SPI data sequence (control board device) A2, B3 SP4 SPI clock G1, G2 MUXout MUX output (PPD_PA or PPD_MOD DC level output) H1, H2 D_MOD Modulator detector output L1, L2 Temp Temperature sensor output – DC voltage J1, J2 Div Frequency divider output K1, K2 DivX Complementary frequency divider output B7 RX_In RF input of receiver B8 RX_Inx Complementary RF input of receiver B11, B12 IFx_I_RX Complementary inphase IF output of receiver C11, C12 IF_I_RX Inphase IF output of receiver D11, D12 IFx_Q_RX Complementary Quadrature IF output of receiver E11, E12 IF_Q_RX Quadrature IF output of receiver L7 TX_Out RF output of transmitter L8 TX_OuTX Complementary RF output of transmitter L11, L12 IF_I_TX Inphase IF input of transmitter K11, K12 IFx_I_TX Complementary inphase IF input of transmitter J11, J12 IF_Q_TX Quadrature IF input of transmitter H11, H12 IFx_Q_TX Complementary Quadrature IF input of transmitter A5, A6, A9, A10, B5, B6, B9, C4, C5, C6, C9, C10, D3, D4, D5, D6, D9, D10, E3, E4, E5, E6, E9, E10, F3, F8, F9, G3, G9, H3, H4, H5, H6, H9, H10, J3, J4, J5, J6, J9, J10, K4, K5, K6, K9, K10, L4, L5, L6, L9, M4, M5, M6, M9, M10 GND Ground and thermal pads A1, A12, M1, M12 GND A1, A12, M1, M12 are electrically not connected in chip but should be connected to ground for mechanical stability. Note: all pins described in the same line need to be connected on the PCB.
Transceiver for V-Band Backhaul Applications from 57 to 64 GHz BGT60 Evaluation Board
6 BGT60 Evaluation Board
6.1 Overview of BGT60 Evaluation Board
Figure 4 shows the top view of the evaluation board for BGT60. In addition to the BGT60 chip, the PLL circuit with a reference oscillator is also implemented on the evaluation board as shown in Figure 4. Figure 4 Evaluation Board for BGT60 – Top View
Transceiver for V-Band Backhaul Applications from 57 to 64 GHz BGT60 Evaluation Board Figure 5 Evaluation Board for BGT60 – Bottom View Table 7 Interface Description of BGT60 Application Board Pin Function Description SMA Connectors DMOD Wideband PPD MOD output Envelop tracking detector Muxout Provides DC voltage corresponding to PPD PA or PPD MOD PPD PA or PPD MOD selectable through SPI control IF_I_TX/ IF_Ix_TX Inphase/Complementary I input of transmitter Source impedance at input: differential 100 Ω IF_Q_TX/ IF_Qx_TX Quadrature/Complementary Q input of transmitter Source impedance at input: differential 100 Ω IF_I_RX/ IF_Ix_RX Inphase/Complementary I output of receiver Load impedance at output: differential 400 Ω IF_Q_RX/ IF_Qx_RX Quadrature/Complementary Q output of receiver Load impedance at output differential 400 Ω RF interface TX/RX Port Transmitter/Receiver WR-15 waveguide WR-15 waveguide
Transceiver for V-Band Backhaul Applications from 57 to 64 GHz Performance of BGT60 Transmitter
7 Performance of BGT60 Transmitter
The output spectrum at the TX port of BGT60 is shown in Figure 6. The measurement setup is shown in Figure 7. A Direct Digital Synthesizer (DDS) from Analog Devices (AD9959) is used to generate th e IF signals for the transmitter. By adjusting the phase of the I and Q output signals from the DDS an image rejection greater than 50 dBc is achieved at the transmitter output . A V-band smart harmonic mixer is used to m easure the output signal. The transmitter output power level is kept low by setting the DAC VGA value to 27 i n order not to drive the smart h armonic mixer in compression. The carrier feedthorugh suppression is achieved by sweeping the values of DAC_MOD_I and DAC_MOD_Q registers. LO suppression of >50dB is achieved with this particular setup. Figure 8 shows the linear and saturated output p ower at the transmitter output between 57-64 GHz. The transmitter gain over frequency is plotted in Figure 9. Figure 10 shows the measured output 1-dB compression point over frequency. Figure 11 shows the measured third order intermodulation performance of the transceiver over frequency. The transmitter output power can be varied by changing the DAC VGA and enabling/disabling the VGA buffer. Figure 12 shows the transmitter performance vs different DAC VGA settings. -80 -70 -60 -50 -40 -30 -20 -10 59.75 59.875 60 60.125 60.25 Output Power Level (dBm) Frequency (GHz) Image LO Leakage Fundamental Figure 6 Output Spectrum of BGT60 at TX Waveguide Port on the evaluation board @ fTX=60.22 GHz (DAC VGA=27)
Transceiver for V-Band Backhaul Applications from 57 to 64 GHz Performance of BGT60 Transmitter
7.1 Measurement Results of 3rd-Order Intermodulation Products
Figure 11 OIP3 versus Frequency at IF Input Power Level=-27 dBm
Transceiver for V-Band Backhaul Applications from 57 to 64 GHz Performance of BGT60 Transmitter
7.2 Measurement Results of VGA and Buffer Amplifier
Figure 12 DAC VGA Setting versus Output Power at different IF Input Power levels (f TX = 60.22 GHz)
Transceiver for V-Band Backhaul Applications from 57 to 64 GHz Performance of BGT60 Transmitter
7.3 PPD Power Amplifier – MUX out
Figure 13 PPD PA Output Voltage versus Output Power @ fTX=60.22 GHz
Transceiver for V-Band Backhaul Applications from 57 to 64 GHz Performance of BGT60 Receiver
8 Performance of BGT60 Receiver
Figure 14 Receiver Gain over Frequency for BGT60 Figure 15 Input P1dB of Receiver @ fRX=60 GHz
Transceiver for V-Band Backhaul Applications from 57 to 64 GHz Performance of BGT60 Receiver
8.1 Intercept Point Measurement of Receiver
Figure 18 Input IP2 of Receiver over Frequency at PRX-RF=-28 dBm Figure 19 Input IP3 of Receiver over Frequency at PRX-RF = -30 dBm
Transceiver for V-Band Backhaul Applications from 57 to 64 GHz VCO Signal Generation
9 VCO Signal Generation
BGT60 is designed to cover the complete tuning range of 57-64 GHz with 0-5.5 V of tuning voltage. All the chips are tested during production and VCO is centered with the help of divider output signal. Figure 20 shows the tuning range of the VCO . The Tuning sensitivity ( Kvco) is in the range of 5 GHz/V to 1.0 GHz/V (covering frequency 57 -64 GHz) being higher at lower tuning voltages and lower at higher tuning voltages. The phase noise shown below is measured directly at TX port of the EVB. Figure 20 VCO Frequency over Tuning Voltage
Transceiver for V-Band Backhaul Applications from 57 to 64 GHz Getting Started with Evaluation Board
10 Getting Started with Evaluation Board
10.1.1 Configuring as Transmitter
To configure BGT60 as transmitter the following steps should be followed: 1) Apply Vcc=6 V to the BGT60 board and connect USB cable from PC to the Evaluation Board. The current consumption should be in the range of 315 mA. 2) In the software folder supplied with this transceiver navigate to “E -Band V-Band SPI-Programmer.exe” and double click on it. A window will open as shown in Figure 23 below. Figure 23 V-Band SPI-Programmer Main Window and PLL Window 3) Click on the “PLL” button on top right corner of this window. Another window will open which looks like Figure 23. 4) In this PLL window one can select the appropriate chip i.e. BGT60 or BGT70 or BGT80 from the drop down list. Then enter the required frequency in “LO frequency”. 5) In “Ref Frequency” box just enter the oscillation frequency of the reference used for PLL. In our case its 40 MHz reference. But exact frequency is also mentioned in the datalog or written on the backside of the board.
Transceiver for V-Band Backhaul Applications from 57 to 64 GHz Getting Started with Evaluation Board 6) In “R Counter” box one can choose between different divider values >1. It should be noted that the PLL IC ADF4158, which is assemb led on the Evaluation Board, accepts maximum PFD frequency of 32 MHz. “Prescaler” should be set to 4/5 and “CP Current” can be set to 2.5 mA. “CP Current” value will change the bandwidth of the loop filter used on the board. 7) After setting everything one should click on the “Green Arrow” in top left side of the PLL window. 8) Before you proceed to this step make sure that there is no IF signal applied to the TX IF inputs. Then in the main window press button. This step will automatically execute the LO leaka ge calibration and set the right value to the DAC_MOD_Q and DAC_MOD_I registers. The current consumption in this case will jump to 550mA. The typical setting for the Transmitter would look like as shown in Figure 24. After LO calibration is done, IF can be applied to TX IF inputs of BGT60. Figure 24 Typical Transmitter Settings for the BGT60 9) Pressing the “Red Arrow” button will update the chip temperature i.e. reading of the integrated temperature sensor and also display DC voltage at Muxout. The DC voltage at Muxout corresponds to the reading of PPD PA or PPD MOD. One of them can be selected at a time from the drop down list under MUX register. 10) Pressing the “Meter” button this button will give you the approximate power output of the device at its landing pad, when IF is applied on the TX input. The measurement is accurate up to -5 dBm of
Transceiver for V-Band Backhaul Applications from 57 to 64 GHz Getting Started with Evaluation Board output power. The power at the output of the transmitter can be controlled by changing the value of DAC_VGA register.
10.1.2 Configuring as Receiver
To configure BGT60 as receiver the following steps should be followed: 1) Follow step 1 to 7 from the above Section 10.1.1 2) Then in the main window enable th e registers as shown in Figure 25. The supply cur rent will jump to 427 mA. Figure 25 Typical Receiver Settings for BGT60
Transceiver for V-Band Backhaul Applications from 57 to 64 GHz Authors
11 Authors
Abhiram Chakraborty, System Engineer of Application Engineering Jagjit Singh Bal, Staff Engineer of Application Engineering All the Authors are working in Business Unit “RF and Protection Devices” at Infineon Technologies AG.
w w w . i n f i n e o n . c o m Published by Infineon Technologies AG AN376