AN3501NFBP

AN3501NFBP PANASONIC | Alldatasheet

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Technical content

Luminance, chroma and linear audio signal processing IC for VCR n Overview The AN3501NFBP is a luminance, chroma signal processing IC for VCR (PAL and NTSC). It also inte- grates a playback equalizer and an NTSC playback cir- cuit. A normal audio signal recording/playback circuit is added so as to design a signal processing PCB in common for both a HiFi and a normal model, resulting in space saving of equipment. This IC is a completely adjustment-free device which has been realized by introducing a adjustment-free tech- nology such as a Zener zap, and contributes to a more efficient design/development and production of an equip- ment. n Features

• Supply voltage range 4.8 V to 5.2 V (600 mW typ.)
• Usable for 4.43 MHz/3.58 MHz systems
• 4.43 MHz system: PAL/NTSC/ME-SECAM
• 3.58 MHz system: NTSC/PAL-N
• Adjustment-free
• Video output level (recording mode)
• Video output level (playback mode)
• White clip level O frequency: sync. tip frequency
• FM deviation
• FM level (recording mode)
• Chroma level (recording mode)
• Normal audio circuit built in
• NTSC to PAL conversion by adopting a simplified NTSC playback circuit of a line skip method.
• ME-SECAM discrimination circuit built-in
• All filters built-in, including a CCD filter
• The upper part flicker suppression by adoption of an ACC circuit by the field and an adaptive APC circuit n Applications
• VCR, camera recorder, combined CTV/VCR set QFH084-P-1818B Unit: mm 21.2±0.2 18.0±0.2 21.2±0.20.1±0.1 0.1±0.1 3.25±0.2 63 43 12 1 (1.0) 0.6±0.2 0.35+0.1 –0.05 0.15+0.1 –0.05 Seating plane 0.80 0.6±0.2 0° to 10° 0.15 +0.1 –0.0

-on 84 L T EE VV EE VV Do Nor. VV EE EE VV EE VV W/D clip EE VVTrap1 Trap2 Nor. SP EE-onSLP-onLP/SLP-on EE-on L VV, mute EE Nor. EE VV VV EE EE VV EE VV EE, test2 VV EE VVSP LP, trick EE VV SECAM PAL CK_off CK_off2fsc To_fO det. Mode SW GND (Y) GND (RF) V CC (RF) GND (NA) T Mute VV fH DOP DOP Nor. Test1 Art V in Video out Line/test1/tuner PB: off V CC (C) V CC (C) V CC (Y) V REG EE/VV/trick HSS out Line in Tuner in Rotary SW

6 H/4 H/2 H

Ext. RF-in Through/test2/ PBNTSC 4.43 /3.58 SW NA-line out PB EQ. out V CC (NA) 1/2 VCC GND (C) NA-tuner in NA-line in 2fSC out GND (VCO) NA-mute in ACC out/killer out 4.43 on RF In/Out Rec. Y FM mod. out Main emph. out CCD DL out CCD DL in SECAM-ID out fH trap DEM SubLPF D-lim. ENV DO Det. Det. RFAGC fO det. Mod. HPFLim. Clamp 3 YNRmix. HPFLim.NLE NLDE N.C. YNR process Clamp Main LPF Clamp 2 GCADet. CCD LPF Y/C mix. MuteClamp AGC Det. HSS ATT SECAM-ID ACC BM BPF Burstup 629LPF ACCdet. Combamp. Main CCDBPF NTSC PAL VXO fH VCO

• 2 fH PC BPF AFC 4phaseselect DP Burstdown Det. F det. APC Killer Det. Sidelock 1/4 1/40SubBMVCO 52Det. 1/4 Rotary ID AGC Y/C mix.

Pin No. Description 1 Y/C mix. chroma input pin

2 EE/VV/trick changeover

3 PB chroma output

4 Chroma V CC(1)

5 Chroma V CC(2)

6 BM DC det. 7 ACC det. 8 F. ACC det. (ROT: high) 9 F. ACC det. (ROT: low)

10 C comb filter input

11 Killer det.

12 C comb filter output

13 SECAM det. 1 14 SECAM det. 2 15 Sync. sepa. det.

16 HSS out

17 AGC det.

18 Line in

19 V REG (2.0 V)

20 Tuner in

21 Lumi. V CC 22 CCD AGC det. 23 Sub clamp det. 1 24 Sub clamp det. 2

25 Video out

26 Sub clamp det. 4

27 CCD DL in

28 Lumi. GND

29 CCD DL out

30 Quasi-sync. pulse input 31 YNR lim. DC 32 N.C. LPF 33 Main emph. FB in/VV edit high 34 Main emph. out 35 Sub clamp det. 3 36 FM mod. out 37 f O det. Pin No. Description 38 Rec. Y-mix. in

39 Line/test1/tuner changeover

40 SECAM-ID out

41 RF In/Out

42 RF GND

43 RF AGC det./EE edit high 44 Phase shift pos. 45 Phase shift neg.

46 Phase shift in

47 RF V CC

48 RF EQ. peaking/SQPB high

49 Rotary in

50 M-SECAM/PAL/NTSC changeover

51 Ext. RF in

52 Through/test2/PBNTSC changeover

53 Peaking

54 Main de-emphasis

55 4.43 MHz/3.58 MHz changeover

56 SLP/LP/SP changeover

57 NA-PB amp. in 58 NA-PB EQ. out 59 NA-PB EQ. SW

60 NA-PB NF

61 NA-PB in

62 NA-PB in EQ./SLP

63 NA GND

64 NA-rec. out 65 NA-rec. EQ. NF 66 NA-rec. EQ. LP/SLP

67 NA V CC

68 NA-line out

69 NA-mute in

70 NA-tuner in

72 NA-AGC det.

73 NA-line in

74 VCO f O

Parameter Symbol Range Unit Supply voltage V CC 4.8 to 5.2 V n Recommended Operating Range n Pin Descriptions (cntinued) Parameter Symbol Rating Unit Supply voltage V CC 5.5 V Supply current I CC 175 mA Power dissipation *2 PD 660 mW Operating ambient temperature *1 Topr -20 to +70 °C Storage temperature *1 T stg -25 to +125 °C n Absolute Maximum Ratings Note) 1. *1: Except for the operating ambient temperature and storage temperature, all ratings are for Ta = 25°C. *2: The power dissipation shown is for the IC package at Ta = 70°C Pin No. Description

75 VCO GND

76 ACC out/killer out

77 Rec. AFC/PB APC det. 78 2f SC out 79 Side lock det. Pin No. Description

80 XO/VCXO out

81 C GND

82 XO/VCXO in

83 XO/VCXO out

84 Rec. APC/f H AFC det. n Electrical Characteristics at VCC = 5 V, Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit DC characteristics Supply current (EE) I CCR V CC = 5 V, EE mode 92 117 144 mA Supply current (VV) I CCP V CC = 5 V, VV mode 105 133 164 mA High mode hold voltage V H Pin 2, pin 39, pin 50, pin 52, pin 56 3.5¾ 5.0 V Middle mode hold voltage V M Pin 2, pin 39, pin 50, pin 52, pin 56 1.75¾ 3.0 V Low mode hold voltage V L Pin 2, pin 39, pin 50, pin 52, pin 56 0 ¾ 1.25 V Sync. level insertion mode hold V30H 3.5 ¾ 5.0 V voltage Gray level insertion mode hold V30M 1.5 ¾ 3.0 V voltage Through mode hold voltage V 30L 0 ¾ 1.0 V Rotary SWH hold voltage V 49H 3.5 ¾ 5.0 V Rotary SWL hold voltage V 49L 0 ¾ 1.25 V 4.43 MHz mode hold voltage V 55H 1.75 ¾ 5.0 V 3.58 MHz mode hold voltage V 55L 0 ¾ 1.25 V

n Electrical Characteristics at VCC = 5 V, Ta = 25°C (continued) Parameter Symbol Conditions Min Typ Max Unit DC characteristics (continued) Audio mute hold voltage V 69H 3.5 ¾ 5.0 V Audio through hold voltage V 69L 0 ¾ 1.25 V After-recording mode hold voltage V70H 4.0 ¾ 5.0 V Insertion mode hold voltage V 70L 0 ¾ 1.0 V VV edit mode hold voltage V 33H 4.0 ¾ 5.0 V EE edit mode hold voltage V 43H 4.0 ¾ 5.0 V SQPB mode hold voltage V 48H 3.25 ¾ 5.0 V Luminance recording system AGC characteristics D V 18-25 White 100%, - 0.5 0.5 1.0 dB V IN = [2.0 V[p-p]]/[0.5 V[p-p]] EE out amplitude (PAL) V 20-25P White 100%, V: S = 7: 3, 1.995 2.1 2.205 V[p-p] V IN = 1 V[p-p] AGC frequency characteristics f20-25 fIN = 5 MHz/1 MHz -2.0 - 0.5 0.5 dB AGC output level ratio D V 20-25 White 140%, 1.28 V[p-p], 0.05 0.55 1.25 dB Ratio to V20-25P EE out amplitude (NTSC) V 20-25N White 100%, V = 0.714 V[p-p], 1.9 2.1 2.3 V[p-p] V IN = 1 V[p-p] M LPF frequency characteristics 1 f18-76(1) 4.43 MHz mode, VIN = 100 mV[p-p] -1.7 0.1 0.9 dB fIN = 2 MHz/0.15 MHz M LPF frequency characteristics 2 f18-76(2) 4.43 MHz mode, VIN = 100 mV[p-p] -4.2 -2.2 -0.7 dB fIN = 3 MHz/0.15 MHz M LPF frequency characteristics 3 f18-76(3) 4.43 MHz mode, VIN = 100 mV[p-p] ¾- 35 -30 dB fIN = 4.43 MHz/0.15 MHz M LPF frequency characteristics 4 f18-76(4) 3.58 MHz mode, VIN = 100 mV[p-p] -4.8 -1.8 0.2 dB fIN = 2.2 MHz/0.15 MHz M LPF frequency characteristics 5 f18-76(5) 3.58 MHz mode, VIN = 100 mV[p-p] ¾- 39 -27 dB fIN = 3.58 MHz/0.15 MHz Sync. separation minimum input S16 White 100%, VIN = 0.145 V[p-p], 23 30 37 % sensitivity Pin 76 amplitude front-edge delay including LPF Sync. separation low-level V 16L R L (VCC ) = 10 kW¾ ¾ 0.7 V output pulse Sync. separation high-level V 16H R L (GND) = 22 kW 4.5 ¾¾ V output pulse Vertical emph. 1-K value gain 1 G76-29(1) V 76 = 400 mV[p-p], LP, fIN = 150 kHz -3.0 -1.5 0 dB Vertical emph. 1-K value gain 2 G76-29(2) V 76 = 400 mV[p-p], LP, fIN = 2 MHz -1.5 0 1.5 dB Vertical emph. difference signalDV VE White 100%, 1 V[p-p] ¾ 30 100 mV[p-p] amplitude

n Electrical Characteristics at VCC = 5 V, Ta = 25°C (continued) Parameter Symbol Conditions Min Typ Max Unit Luminance recording system (continued) Vertical emph. X value gain G 31-33 V IN = 40 mV[p-p], fIN = 150 kHz -18.5 -15.0 -11.5 dB CCD input output level V 29 V IN = 1 V[p-p], white 100% 375 405 440 mV[p-p] NL emphasis/detail enhancer GNE(1) SP/edit: V76 = -20 dB, 0.4 1.2 2.0 dB frequency characteristics 1 f IN = 500 kHz/150 kHz NL emphasis/detail enhancer GNE(2) SP/edit: V76 = -20 dB, 1.7 2.9 4.1 dB frequency characteristics 2 f IN = 2 MHz/150 kHz NL emphasis/detail enhancer GNE(3) SP/normal: V76 = -20 dB, 1.1 2.1 3.1 dB frequency characteristics 3 f IN = 500 kHz/150 kHz NL emphasis/detail enhancer GNE(4) SP/normal: V76 = -20 dB, 3.2 4.7 6.2 dB frequency characteristics 4 f IN = 2 MHz/150 kHz NL emphasis/detail enhancer GNE(5) LP: V76 = -20 dB, 2.54 3.84 5.14 dB frequency characteristics 5 f IN = 500 kHz/150 kHz NL emphasis/detail enhancer GNE(6) LP: V76 = -20 dB, 3.9 5.9 7.9 dB frequency characteristics 6 f IN = 2 MHz/150 kHz NL emphasis/detail enhancer GNE(7) LP: V76 = 0 dB, 0.2 0.9 1.6 dB frequency characteristics 7 f IN = 2 MHz/150 kHz Main emphasis gain G ME 1 kW /220+0.1 mF, fIN = 150 kHz 13 15 17 dB Main emphasis standard output VME White 100%, 1 V[p-p] 350 400 450 mV[p-p] level White clip level LV WC White 100% 176 183 190 % Dark clip level LV DC White 100% 43 55 65 % (4.43 PAL) PAL mode (4.43 NTSC) NTSC mode FM mod. output frequency f 36N(2) No input 3.58 MHz mode, 3.29 3.39 3.49 MHz (3.58 NTSC) NTSC mode FM mod. output secondary 2f 36P No input PAL mode ¾- 45 -35 dB distortion (PAL) FM mod. deviation (PAL) D 36P White 100% 0.95 1.0 1.05 MHz FM mod. deviation (NTSC) D 36N White 100% 0.9 1.0 1.1 MHz Rec. FM total output amplitude VFM V 36 /4 · G38-41 , V36: pin 36 amplitude 332.5 350 367.5 mV[p-p] (PAL) frequency characteristics Luminance playback system (VHS) (SQPB)

n Electrical Characteristics at VCC = 5 V, Ta = 25°C (continued) Parameter Symbol Conditions Min Typ Max Unit Luminance playback system (continued) Drop out detect SW on level S 51 fIN = 4 MHz, 0 dB = 350 mV[p-p] -22 -18 -14 dB Drop out detect hysteresis D S51 fIN = 4 MHz, 0 dB = 350 mV[p-p] 1.0 3.0 5.0 dB Env. detect SW operating time TENV AM wave 1 kHz, VIN = 350 mV, 180 224 270 ms fIN = 4 MHz NL de-emphasis G ND(1) SP: VIN = -20 dB, -2.7 -1.7 - 0.7 dB frequency characteristics 1 f IN = 500 kHz/150 kHz NL de-emphasis G ND(2) SP: VIN = -20 dB, 2 MHz/150 kHz -5.5 -4.2 -3.0 dB frequency characteristics 2 NL de-emphasis G ND(3) LP: VIN = -20 dB, -6.2 -3.9 -2.2 dB frequency characteristics 3 f IN = 500 kHz/150 kHz NL de-emphasis G ND(4) LP: VIN = -20 dB, 2 MHz/150 kHz -9.0 -7.5 -6.2 dB frequency characteristics 4 NL de-emphasis G ND(5) LP: VIN = 0 dB, 2 MHz/150 kHz -2.7 -2.0 -1.3 dB frequency characteristics 5 YNR 1-K value gain EDNC G 54-29E White 100%, VIN = 160 mV[p-p] 4.5 6.0 7.5 dB YNR 1-K value gain VNC G 54-29V White 100%, VIN = 160 mV[p-p] 1.8 3.3 4.8 dB YNR difference element DV EDNC Rectangular wave, VIN = 160 mV[p-p] ¾ 30 100 mV[p-p] amplitude EDNC YNR difference element DV VNC Rectangular wave, VIN = 160 mV[p-p] ¾ 10 100 mV[p-p] amplitude VNC YNR X value gain EDNC G 31-25E V IN = 40 mV[p-p], fIN = 150 kHz -4.9 -2.9 -1.3 dB YNR X value gain VNC G 31-25V V IN = 40 mV[p-p], fIN = 150 kHz 0.6 2.1 3.6 dB YNR lim. (VNC) output level 1 V25YL(1) V IN = 800 mV[p-p], fIN = 150 kHz 26 40 53 mV[p-p] YNR lim. (VNC) output level 2 V25YL(2) V IN = 300 mV[p-p], fIN = 150 kHz 13.5 25.0 37.0 mV[p-p] YNR lim. (VNC) output level 3 V25YL(3) V IN = 100 mV[p-p], fIN = 150 kHz 80 110 140 mV[p-p] CCD AGC cover range DV 31 V 54 = 160 mV[p-p], rectangular wave, 0 30 100 mV[p-p] CCD Gain –3 dB Noise cancellar G 25N(1) Normal mode, V27 = -30 dB, Including-13.0 -8.0 -4.8 dB frequency characteristics 1 CCD LPF, f IN = 1 MHz/150 kHz Noise cancellar G 25N(2) Normal mode, V27 = -30 dB, Including-9.3 -4.5 -2.3 dB frequency characteristics 2 CCD LPF, f IN = 2 MHz/150 kHz Noise cancellar G 25N(3) Normal mode, V27 = 0 dB, Including - 0.8 1.2 2.7 dB frequency characteristics 3 CCD LPF, f IN = 2 MHz/150 kHz Noise cancellar G 25N(4) Edit mode, V27 = -30 dB, Including - 0.3 -1.0 0.5 dB frequency characteristics 4 CCD LPF, f IN = 2 MHz/150 kHz Video output sync. DC levelDV SYNC White 100%, V27 = 317 mV[p-p] 0.8 0.95 1.1 V Video output quasi-V offset voltageD V 25A V 30 = 5 V -30 0 60 mV Video output quasi-H offset voltageD V 25G V 30 = 2.5 V 0.85 1.0 1.15 V

n Electrical Characteristics at VCC = 5 V, Ta = 25°C (continued) Parameter Symbol Conditions Min Typ Max Unit Luminance playback system (continued) Chroma mix. output gain G 1-25 V IN = 600 mV[p-p], fIN = 5 MHz 4.9 6.6 8.3 dB Chroma mix. frequency characteristicsf1-25 V IN = 600 mV[p-p], fIN = 5 MHz/1 MHz - 0.5 0.3 1.0 dB RF-AGC output amplitude V 41-45 V IN = 200 mV[p-p], f = 4 MHz 170 215 265 mV[p-p] RF-AGC sensitivity S RF –6 dB input ¾ 0.5 3.0 dB RF-AGC output distortion D RF V IN = 400 mV[p-p], f = 4 MHz ¾- 44 -35 dB RF-AGC maximum gain G RFAGC V IN = 20 mV[p-p], f = 4 MHz 8.5 10.5 12.5 dB RF-EQ. frequency characteristics 2 GEQ2 V IN = 20 mV[p-p], f = 1 MHz/5 MHz -24.0 -15.0 -9.0 dB RF-EQ. frequency characteristics 3 GEQ3 f = 2 MHz/5 MHz -9.8 -5.3 -3.3 dB RF-EQ. frequency characteristics 4 GEQ4 f = 630 kHz/5 MHz ¾- 30 -15 dB RF-EQ. frequency characteristics 5 GEQ5 f = 8 MHz/5 MHz ¾- 30 -15 dB RF-EQ. total characteristics V41-36 V IN = 200 mV[p-p] 305 435 605 mV[p-p] Chroma recording system Output DC for color V 76CO Color, V11 = 3.5 V 3.5 ¾¾ V Output DC for killer V 76CK Killer, V11 = 1.5 V ¾¾ 0.5 V Burst up gain G BUP V IN = 1: 1 (B = 300 mV[p-p]) 5 6 7 dB Rec. APC pull in range 1 f APC(1) 4.43 MHz mode, fIN = fSC +500 Hz 500 800 ¾ Hz Rec. APC pull in range 2 f APC(2) 4.43 MHz mode, fIN = fSC -500 Hz ¾- 800 -500 Hz Rec. APC pull in range 3 f APC(3) 3.58 MHz mode, fIN = fSC +500 Hz 500 800 ¾ Hz Rec. APC pull in range 4 f APC(4) 3.58 MHz mode, fIN = fSC -500 Hz ¾- 800 -500 Hz VXO free-run frequency 1 f VXO(1) 4.43 MHz mode, SECAM mode -100 0 100 Hz VXO free-run frequency 2 f VXO(2) 3.58 MHz mode, SECAM mode -100 0 100 Hz Rec. chroma output amplitude VCR B: C = 1: 2 chroma level 75.6 82 88.4 mV[p-p] ACC characteristics 1 DV ACC1 V IN = 1: 1, +9, -5 dB, V49 = 5 V ¾¾ 3d B ACC characteristics 2 DV ACC2 V IN = 1: 1, +9, -5 dB, V49 = 0 V ¾¾ 3d B 630k LPF f RL(1) 4.43 MHz mode, VIN = 200 mV[p-p], - 0.7 0.3 1.3 dB frequency characteristics 1 150 kHz/630 kHz 630k LPF f RL(2) 4.43 MHz mode, VIN = 200 mV[p-p], ¾- 25 -15 dB frequency characteristics 2 3 MHz/630 kHz 630k LPF f RL(3) 4.43 MHz mode, VIN = 200 mV[p-p], ¾- 35 -20 dB frequency characteristics 3 4.43 MHz/630 kHz 630k LPF group delay GD RL 4.43 MHz mode, VIN = 200 mV[p-p], 310 360 410 ns fIN = 630 kHz 630k LPF f RL(4) 3.58 MHz mode, VIN = 200 mV[p-p], -2.0 0 2.0 dB frequency characteristics 4 2 MHz/630 kHz SECAM discrimination output DC 1V 40(1) 4.43 MHz mode, PAL mode, fIN = 4.43 MHz 0 ¾ 0.65 V SECAM discrimination output DC 2V 40(2) 4.43 MHz mode, SECAM mode, 4 ¾ 5V fIN = 4.25 MHz, 4.41 MHz

n Electrical Characteristics at VCC = 5 V, Ta = 25°C (continued) Parameter Symbol Conditions Min Typ Max Unit Chroma playback system Comb amp. gain LP DG MB Difference from EP mode and SP mode 0.6 1.6 2.6 dB Burst down gain 1 G BD(1) V IN = 1: 1 (B = 440 mV[p-p]), -6.2 -5.2 -4.2 dB NTSC/SP mode Main BM carrier leak G CL V IN = 250 mV[p-p], ¾- 45 -38 dB fIN = 630 kHz without signal Main BM signal leak G SL V IN = 250 mV[p-p], fIN = 630 kHz ¾- 55 -38 dB XO free-run frequency 1 f XO(1) 4.43 MHz mode, 1/2 · f78 -50 ¾ 50 Hz XO free-run frequency 2 f XO(2) 3.58 MHz mode, 1/2 · f78 -50 ¾ 50 Hz 2fSC output level 1 V 2fsc(1) 4.43 MHz mode 240 370 500 mV[p-p] 2fSC output level 2 V 2fsc(2) 3.58 MHz mode 260 400 540 mV[p-p] fSC output level 1 V fsc(1) 4.43 MHz mode 300 370 500 mV[p-p] fSC output level 2 V fsc(2) 3.58 MHz mode 300 420 560 mV[p-p] 630 k BPF gain 1 G PB(1) 4.43 MHz mode, VIN = 10 mV[p-p], 25 30 35 dB fIN = 630 kHz 630k BPF f PB(1) 4.43 MHz mode, VIN = 10 mV[p-p], -5.0 -2.0 - 0.5 dB frequency characteristics 1 f IN = 150 kHz/630 kHz 630k BPF f PB(2) 4.43 MHz mode, VIN = 10 mV[p-p], -4 -2.0 - 0.5 dB frequency characteristics 2 f IN = 930 kHz/630 kHz 630k BPF f PB(3) 4.43 MHz mode, VIN = 10 mV[p-p], ¾- 40 -30 dB frequency characteristics 3 f IN = 2.4 MHz/630 kHz 630k BPF gain 2 G PB(2) 3.58 MHz mode, fIN = 630 kHz, -1.0 0 1.0 dB Difference from 4.43 MHz mode 630k BPF f PB(4) 3.58 MHz mode, fIN = 930 kHz, -2.0 0 2.0 dB frequency characteristics 4 Difference from 4.43 MHz mode fHVCO pull-in range f VCOmax fIN = fH +500 Hz 500 ¾¾ Hz fVCOmin fIN = fH -500 Hz ¾¾ - 500 SECAM discrimination output V 40(3) 4.43 MHz mode, SECAM mode, 0 ¾ 0.65 V DC 3 f IN = 0.63 MHz SECAM discrimination output V 40(4) 4.43 MHz mode, PAL mode, 0 ¾ 0.65 V DC 4 f IN = 0.63 MHz, 0.65 MHz SECAM discrimination output V 40(5) 4.43 MHz mode, SECAM mode, 4 ¾ 5V DC 5 f IN = 0.67 MHz, 0.81 MHz SECAM discrimination output V 40(6) 4.43 MHz mode, PAL mode, 4 ¾ 5V DC 6 f IN = 0.65 MHz, 0.81 MHz Audio-system Line out gain V EL f = 1 kHz, EE, -29 dBV 22.4 23.6 24.8 dB Rec. out level ratio at SP V ER1 f = 1 kHz, EE, -29 dBV, ratio to VEL- 0.2 0.8 1.8 dB Rec. out level ratio at SLP V ER2 f = 1 kHz, EE, -29 dBV, ratio to SP - 0.2 0.3 0.8 dB

n Electrical Characteristics at Ta = 25°C (continued)

• Design reference data Note) The characteristics listed below are theoretical values based on the IC design and are not guaranteed. Parameter Symbol Conditions Min Typ Max Unit Luminance-system M LPF group delay 1 GD(1) 4.43 MHz mode, rec., f IN = 0.15 MHz 655 705 755 ns M LPF group delay 2 GD(2) 3.58 MHz mode, rec., f IN = 0.15 MHz 670 750 830 ns M LPF group delay differenceDGD 4.43 MHz mode, PB, f IN = 1 MHz, 155 180 225 ns SQPB/VHS mode difference CCD LPF G 27-29(1) 4.43 MHz mode, EDNC, VIN = 312 -2.0 0.5 1.5 dB frequency characteristics 1 mV[p-p], f IN = 3 MHz/0.2 MHz CCD LPF G 27-29(2) 4.43 MHz mode, EDNC, VIN = 312 ¾- 30 -25 dB frequency characteristics 2 mV[p-p], f IN = 13.3 MHz/0.2 MHz CCD LPF group delay 1 GD 29(1) 4.43 MHz mode, EDNC, 90 120 150 ns V IN = 312 mV[p-p], fIN = 0.2 MHz CCD LPF G 27-29(3) 3.58 MHz mode, EDNC, VIN = 312 -3.0 0.7 2.0 dB frequency characteristics 3 mV[p-p], f IN = 2 MHz/0.2 MHz CCD LPF G 27-29(4) 3.58 MHz mode, EDNC, VIN = 312 ¾- 2.5 -20 dB frequency characteristics 4 mV[p-p], f IN = 7.2 MHz/0.2 MHz CCD LPF group delay 2 GD 29(2) 3.58 MHz mode, EDNC, 85 125 165 ns V IN = 312 mV[p-p], fIN = 0.2 MHz FM carrier interleave CI 36 EP mode, V37: fixed 6.4 7.9 9.4 kHz FM demod min. input level V 51MIN fIN = 3.8 MHz, 4.8 MHz 10 ¾¾ mV[p-p] FM demod linearity L 53V fIN = 3 MHz, 4 MHz, 5 MHz 0.82 0.92 1.05 ¾ Sub LPF frequency characteristics 1G SL1 fIN = 2 MHz/1.5 MHz, fOUT = 4 MHz/3 MHz -2.7 - 0.5 1.0 dB Sub LPF frequency characteristics 2G SL2 fIN = 3 MHz/1.5 MHz, fOUT = 6 MHz/3 MHz -16.5 -12.0 -8.4 dB Parameter Symbol Conditions Min Typ Max Unit Audio-system (continued) Rec. out distortion at LP T ER1 f = 1 kHz, EE, -29 dBV ¾ 0.3 1 % Rec. out SN SLP N ER2 EE ¾- 65 -59 dBV AGC level ratio V ELA f = 1 kHz, -9 dBV ¾ 0.3 3 dB Line out distortion T EL f = 1 kHz, -29 dBV ¾ 0.3 1 % Rec. out max. level V ERMAX f = 1 kHz, amplitude for distortion = 1% - 0.5 ¾¾ dBV PB gain SP V VL1 f = 1 kHz, -68.3 dBV 61 62 63 dB PB level ratio SLP V VL2 f = 1 kHz, -70.8 dBV ¾ 2 ¾ dB PB distortion SLP T VL2 f = 1 kHz, -70.8 dBV ¾ 0.5 1 % Noise referred to input: SP N VL1 No input signal, Rg = 1.5 kW¾ ¾ 1.8 mV[rms] fH attenuation V TR1 f = 15.625 kHz ¾- 15 -5d B Line out max. level V LMAX f = 1 kHz, amplitude for distortion = 1% -1.5 ¾¾ dBV Mute attenuation V ML f = 1 kHz, PB mode ¾¾ - 80 dB

n Electrical Characteristics at Ta = 25°C (continued)

• Design reference data (continued) Note) The characteristics listed below are theoretical values based on the IC design and are not guaranteed. Parameter Symbol Conditions Min Typ Max Unit Luminance-system (continued) DOC SW crosstalk CT 25-54 V IN = 160 mV[p-p], 1 MHz forced DOC ¾¾ - 40 dB YNR lim. (VNC) output level 4 V25YL4 V IN = 300 mV[p-p], fIN = 1 MHz 15 30 45 mV[p-p] Tune/line crosstalk CT 20-18 f = 1 MHz ¾¾ - 40 dB Line/tuner crosstalk CT 18-20 f = 1 MHz ¾¾ - 40 dB Chroma-system M BPF [4.43 MHz] f MR(1)-4 4.43 MHz mode, ¾¾ - 15 dB frequency characteristics rec. 1 f IN = 2.3 MHz/4.43 MHz frequency characteristics rec. 2 f IN = 3.93 MHz/4.43 MHz frequency characteristics rec. 3 f IN = 4.93 MHz/4.43 MHz M BPF [4.43 MHz] f MR(4)-4 4.43 MHz mode, ¾¾ - 10 dB frequency characteristics rec. 4 f IN = 6.5 MHz/4.43 MHz M BPF [4.43 MHz] GD MR-4 4.43 MHz mode, 340 390 440 ns group delay rec. f IN = 4.43 MHz M BPF [4.43 MHz] f MP(1)-4 4.43 MHz mode, ¾¾ - 15 dB frequency characteristics PB 1 f IN = 2.6 MHz/4.43 MHz frequency characteristics PB 2 f IN = 3.93 MHz/4.43 MHz frequency characteristics PB 3 f IN = 4.93 MHz/4.43 MHz M BPF [4.43 MHz] f MP(4)-4 4.43 MHz mode, ¾¾ - 30 dB frequency characteristics PB 4 f IN = 5.69 MHz/4.43 MHz M BPF [4.43 MHz] f MP(5)-4 4.43 MHz mode, ¾¾ - 15 dB frequency characteristics PB 5 f IN = 6.5 MHz/4.43 MHz M BPF [4.43 MHz] DG MP-4 4.43 MHz mode, 530 580 630 ns group delay PB f IN = 4.43 MHz M BPF [3.58 MHz] f MR(1)-4 3.58 MHz mode, ¾¾ - 15 dB frequency characteristics rec. 1 f IN = 1.5 MHz/3.58 MHz M BPF [3.58 MHz] f MR(2)-4 3.58 MHz mode, -5.5 -3.3 -15 dB frequency characteristics rec. 2 f IN = 3.08 MHz/3.58 MHz frequency characteristics rec. 3 f IN = 4.08 MHz/3.58 MHz M BPF [3.58 MHz] f MR(4)-4 3.58 MHz mode, ¾¾ - 10 dB frequency characteristics rec. 4 f IN = 6.5 MHz/3.58 MHz M BPF [3.58 MHz] GD MR-4 3.58MHz mode, 390 470 550 ns group delay rec. f IN = 3.58 MHz

n Electrical Characteristics at Ta = 25°C (continued)

• Design reference data (continued) Note) The characteristics listed below are theoretical values based on the IC design and are not guaranteed. Parameter Symbol Conditions Min Typ Max Unit Chroma-system (continued) M BPF [3.58 MHz] f MP(1)-4 3.58 MHz mode, ¾¾ - 15 dB frequency characteristics PB 1 f IN = 1.5 MHz/3.58 MHz frequency characteristics PB 2 f IN = 3.08 MHz/3.58 MHz frequency characteristics PB 3 f IN = 4.08 MHz/3.58 MHz M BPF [3.58 MHz] f MP(4)-4 3.58 MHz mode, ¾¾ - 15 dB frequency characteristics PB 4 f IN = 4.84 MHz/3.58 MHz M BPF [3.58 MHz] f MP(5)-4 3.58 MHz mode, ¾¾ - 10 dB frequency characteristics PB 5 f IN = 6.5 MHz/3.58 MHz M BPF [3.58 MHz] GD MP-4 3.58 MHz mode, fIN = 3.58 MHz 580 660 740 ns group delay PB CCD BPF f CDB(1) 4.43 MHz mode, VIN = 300 mV[p-p], -2.3 - 0.3 0.7 dB frequency characteristics 1 f IN = 3.93 MHz/4.43 MHz CCD BPF f CDB(2) 4.43 MHz mode, VIN = 300 mV[p-p], -2.2 0.1 0.8 dB frequency characteristics 2 f IN = 4.93 MHz/4.43 MHz CCD BPF f CDB(3) 4.43 MHz mode, VIN = 300 mV[p-p], ¾- 38 -25 dB frequency characteristics 3 f IN = 8.86 MHz/4.43 MHz CCD BPF f CDB(4) 4.43 MHz mode, VIN = 300 mV[p-p], ¾- 40 -30 dB frequency characteristics 4 f IN = 13.29 MHz/4.43 MHz CCD BPF f CDB(5) 3.58 MHz mode, VIN = 300 mV[p-p], -3.2 - 0.5 0.8 dB frequency characteristics 5 f IN = 3.08 MHz/3.58 MHz CCD BPF f CDB(6) 3.58 MHz mode, VIN = 300 mV[p-p], -2.8 - 0.2 1.2 dB frequency characteristics 6 f IN = 4.08 MHz/3.58 MHz CCD BPF f CDB(7) 3.58 MHz mode, VIN = 300 mV[p-p], ¾- 32 -20 dB frequency characteristics 7 f IN = 7.16 MHz/3.58 MHz CCD BPF f CDB(8) 3.58 MHz mode, VIN = 300 mV[p-p], ¾- 48 -30 dB frequency characteristics 8 f IN = 14.32 MHz/3.58 MHz Phase shifter +45° gain G HPF V IN = 300 mV[p-p], fIN = 4.43 MHz -7.0 -6.0 -5.0 dB Phase shifter -45° gain G LPF V IN = 300 mV[p-p], fIN = 4.43 MHz -7.0 -6.0 -5.0 dB Phase shifter +45° phase P HPF V IN = 300 mV[p-p], fIN = 4.43 MHz 40 45 50 deg Phase shifter -45° phase P LPF V IN = 300 mV[p-p], fIN = 4.43 MHz -50 -45 -40 deg (1/2 · Df78) /400 mV (1/2 · Df78) /400 mV

Description

No. dance (Z) EE mode VV mode DC (V) 1 30 k W Y/C mix. ¾ 4.5 PB chroma input pin 2 50 k W EE/VV/trick EE: VV: ¾ changeover pin 3.5 V to 5 V 1.75 V to 3.0 V Trick: 0 V to 1.25 V 3 EF PB chroma output ¾ 2.0 pin 4 ¾¾ V CC pin DC 5.0 (chroma main) 5 ¾¾ V CC pin DC 5.0 (chroma APC) 6 10 k W BM balance DC 2.7 capacitor pin 7 High ACC detection pin DC 2.15 8 OC Field AGC detection 0.2 pin (on) Note: off in trick mode 9 OC Field AGC detection 0.2 pin (on) Note: off in trick mode n Terminal Equivalent Circuits 5 kW 1 620 W 30 kW20 kW 1 620 W 10 kW 2 50 kW 400 mA 100 W 1 620 W10 kW 10 kW 1 620 W80 mA 1 620 W 8 1 V Ch.2 1 V Ch.1

No. dance (Z) EE mode VV mode DC (V) 10 50 k W Comb-side chroma ¾ 2.7 input pin 11 High Color killer detection K iller on at 2.4 pin 2.13 V or below 12 EF Comb filter driving ¾ 2.0 output pin

13 EF SECAM detection DC ¾

14 EF SECAM detection DC ¾

15 500 W Sync. separation det. DC 1.4 + pin VT/IE 16 Rc Sync. separation ¾ pulse output pin n Terminal Equivalent Circuits (continued) 1 620 W50 kW 1 620 W500 W 15 kW11 800 mA 1 620 W 1 620 W

500 W 1 620 W 20 kW

68.5 W 68.5 W 0 V 5 V

No. dance (Z) EE mode VV mode DC (V) 17 60 W AGC detection pin DC ¾ 2.25 VT/IE 18 105 k W Line input pin ¾ 3.0 19 EF V REG DC 2.0 20 105 k W Tuner input pin ¾ 3.0 21 ¾¾ V CC pin (Y-system) DC 5.0 22 High CCD AGC detection DC Typ. pin 2.4 23 High Clamp 1 detection DC 2.3 pin n Terminal Equivalent Circuits (continued)

60 W 1 620 W

No. dance (Z) EE mode VV mode DC (V) 24 High Clamp 2 detection DC 2.3 pin 25 EF Video signal output Sync. pin 1.0 26 High Clamp 4 detection DC 2.3 pin 27 55 k W CCD output pin 2.0 28 ¾¾ GND (Y-system) ¾¾ 0 29 EF CCD input pin Sync. 1.7 30 150 k W Quasi sync. pulse ¾ Single level: ¾ input pin 3.5 V to 5 V Gray level:

1.5 V to 3 V

Through:

0 V to 1 V

31 10 k W Correlation detection DC ¾ DC pin n Terminal Equivalent Circuits (continued) 1 620 W1 620 W 3 m A 1 620 W1 620 W 25 kW 1 620 W30 kW 200 mA 150 kW 10 kW736 W 10 kW 10 kW 1 620 W 1 620 W

No. dance (Z) EE mode VV mode DC (V) 32 2.2 k W N.C. LPF pin ¾ 2.4 33 OB Main emphasis VV edit: Sync. feedback input pin/ 4 V to 5 V 1.7 VV edit changeover pin 34 EF Main emphasis ¾ Sync. output pin 1.7 35 High Clamp 3 detection DC 2.3 pin 36 EF MOD output pin ¾ 2.5 37 High f O detection pin DC ¾ 2.2 38 30 k W Rec. FM input pin ¾ 2.7 n Terminal Equivalent Circuits (continued) 2 200 W 1 620 W 340 mA 450 W 10 kW 1 620 W1 620 W 100 W 3 m A 500 W 1 620 W 30 kW 1 620 W

No. dance (Z) EE mode VV mode DC (V)

39 High Line/test1/tuner Line: Test1: ¾

changeover pin 3.5 V to 5 V 1.75 V to 3 V Test1:

1.75 V to 3 V

Tuner: 0 V to 1.25 V

40 Rc SECAM ID output DC ¾

41 EF/ Rec. YC output pin/ 2.7 30 kW PB envelope input pin 42 ¾¾ GND pin DC DC 0 Y (PF-system) 43 540 W RF AGC detection pin/EE edit: 2.5 + EE edit changeover 4 V to 5 V EF pin 44 EF Phase shift DC 2.5 (positive) 45 EF Phase shift DC 2.5 (negative) n Terminal Equivalent Circuits (continued) 10 kW 50 kW 30 kW 1 620 W

540 W540 W

No. dance (Z) EE mode VV mode DC (V) 46 OB Phase shift in DC 2.5 47 ¾¾ V CC pin DC DC 5.0 Y (MOD output block RF system) 48 R E RF peaking/SQPB DC 1.0 changeover pin SQPB:

3.25 V to 5 V

49 OB Rotary pulse input ¾

50 50 k W MESECAM/PAL/ MESECAM: ¾ NTSC changeover 3.5 V to 5 V pin PAL: NTSC: 0 V to 1.25 V 51 30 k W Y ext. PF FM input ¾ Pin 51: open 3.0 pin Pin 51:

52 High PB NTSC changeoverPB NTSC: ¾

pin 3.5 V to 5 V Test2: Through: 0 V to 1.25 V 53 VT/ Main de-emphasis ¾ 1.5 IE peaking pin n Terminal Equivalent Circuits (continued) 1 950 W 820 W 1 kW 10 kW 75 kW 10 kW 50 kW 10 kW 30 kW 12 kW 1 620 W 10 kW 50 mA 2.75 kW 1 620 W 2.75 kW 5 V 0 V

No. dance (Z) EE mode VV mode DC (V) 54 OC Main de-emphasis ¾ 3.5 output pin 55 High 4.43 MHz/3.58 MHz 4.43: ¾ changeover pin 1.75 V to 5 V 3.58: 0 V to 1.25 V

56 High EP/LP/SP EP: ¾

changeover pin 3.5 V to 5 V LP: SP: 0 V to 1.25 V 57 32 k W NA-PB amp. in ¾ 2.5 -2.95 dB = 94.7 mV[p-p] 58 EF NA-PB out ¾ 3.2 -2.95 dB = 94.7 mV[p-p] 59 SP NA-PB EQ. SW ¾ 2.5 SLP 8 kW 60 O.B. NA-PB NF ¾ 2.5 n Terminal Equivalent Circuits (continued) 50 mA 2.75 kW 1 620 W 2.75 kW 10 kW 10 kW 50 kW 2.5 V 30 kW

400 W1 770 W

No. dance (Z) EE mode VV mode DC (V) 61 EE NA-PB in DC 2.5 P.P. VV 80 kW -68.3 dBV

62 SP/LP NA-PB SLP SW DC 0

63 ¾¾ GND ¾¾ 0 64 EE NA-rec. out DC 2.5 P.P. VV 100 kW 65 1 k W NA-rec. EQ. NF ¾ 2.5 66 SP NA-rec. EQ. LP/ DC 2.5 100 kW SLP SW LP/ SLP P.P. 67 ¾¾ V CC DC 5.0 68 P.P. NA-line out 2.5 (Typ.) -5.7 dBV =

1.47 V[p-p]

n Terminal Equivalent Circuits (continued)

800 W 100 W

2.5 V 800 W 100 kW 76 kW 100 W 100 W 1 250 W 2.5 V

100 W24 kW5 050 W

2.5 V 100 W 100 W 100 kW

No. dance (Z) EE mode VV mode DC (V) 69 210 k W NA-mute in DC ¾ Mute:

3.5 V to 5 V

Through: 0 V to 1.25 V 70 30 k W NA-tuner in ¾ 2.5 (Typ.) -29 dBV = 100 mV[p-p] 71 25 k W NA V REF DC 2.5 72 ¾ NA-AGC det. DC ¾ 73 30 k W NA-line in ¾ 2.5 (Typ.) -29 dBV = 100 mV[p-p] 74 Low f VCO adjustment pin DC DC 0.6 75 ¾¾ GND (for VCO) ¾¾ 0 76 20 k W ACC output pin 2.7 Y LPF output pin Killer output pin Low at killer n Terminal Equivalent Circuits (continued) 10 kW 200 kW

800 W 400 W

2.5 V 50 kW 50 kW 575 W 1/2 VCC 143 W 30 kW 2.5 V 400 W 2 kW

100 W 20 kW

No. dance (Z) EE mode VV mode DC (V) 77 Rc Rec. AFC, PB APC DC DC 2.1 detection pin 78 EF 2f SC output pin 2.7

79 High Side lock detection Side lock detec- ¾

80 EF Xtal output pin 3.6

3.58 MHz

81 ¾¾ GND ¾¾ 0 (chroma-system) 82 1 910 W Xtal input pin 2.7 83 EF Xtal output pin 3.6

4.43 MHz

84 EE Rec. APC, f H AFC DC 2.4 75 kW detection pin VV 75 kW n Terminal Equivalent Circuits (continued) 500 W 1 620 W 1 620 W 150 W 5 kW 300 W 1 910 W 1 620 W 500 W 4 pF 75 kW 500 W 1 620 W 300 W 1 620 W

n Application Circuit Example -on 84 L T EE VV EE VV Do Nor. VV EE EE VV EE VV W/D clip EE VVTrap1 Trap2 Nor. SP EE-onSLP-onLP/SLP-on EE-on L VV, mute EE Nor. EE VV VV EE EE VV EE VV EE, test2 VV EE VVSP LP, trick EE VV SECAM PAL CK_off CK_off2fsc To_fO det. Mode SW GND (RF) GND (NA) T Mute VV fH DOP DOP Nor. Test1 Art V in Video out Line/test1/tuner PB: off V CC (C) V CC (C) V CC (Y) V REG EE/VV/trick HSS out Line in Tuner in Rotary SW Ext. RF-in Through/test2/PBNTSC 4.43 /3.58 SW NA-line out V CC (NA) 1/2 VCC GND (C) NA-tuner in NA-line in 2fSC out GND (VCO) NA-mute in ACC out/killer out 4.43 on RF In/Out SECAM-ID out fH trap DEM SubLPF D-lim. ENV DO Det. Det. RFAGC fO det. Mod. HPFLim. Clamp 3 YNRmix. HPFLim.NLE NLDE N.C. YNR process Clamp Main LPF Clamp 2 GCADet. CCD LPF Y/C mix. MuteClamp AGC Det. HSS ATT SECAM-ID ACC BM BPF Burstup 629LPF ACCdet. Combamp. Main CCDBPF NTSC PAL VXO fH VCO

• 2 fH PC BPF AFC 4phaseselect DP Burstdown Det. F det. APC Killer Det. Sidelock 1/4 1/40SubBMVCO 52Det. 1/4 Rotary ID AGC Y/C mix. GND (Y) 1.2 MW SQPB high, SECAM high SQPB high 1 H CCD 1 kW 1 kW 220 W 4 700 W 47 kW 1 000 pF 10 mF 4.7 mF 10 mF 0.01 mF 0.47 mF 0.1 mF 0.47 mF 2.2mF 22 mF 22 mF 47 mF 1 kW 27 pF 220 kW 680 kW 680 kW 0.01 mF 0.1 mF 0.1 mF 0.1 mF 0.1 mF 0.33 mF 0.33 mF 0.01 mF 22 mF 0.01 mF 1 mF 560 pF 22 mH 12 mH 100 mH 100 mF 0.1 mF 0.01 mF 0.01 mF 3 300 W 220 W 240 W 1 500 W 3 300 W 390 W 10 kW330 kW 22 m F 200 W 1 mF 1 800 pF 1 000 pF 68 kW 18 kW 1 mF 15 mH0.012 mF 330 kW 560 kW 0.015 mF 10 mF 0.47 mF 47 mF 10 mF 2.2 MW –1% 300 W 0.47 mF 1 mF 0.01 mF 1 200 W 22 kW 1 mF 100 pF 10 pF 220 pF 10 kW 0.47 mF 0.01 mF 0.022 mF VV edit high EE edit high NTSC low M-SECAM high 4.43 3.58 0.1 mF 4.7 mF 0.01 mF –1% 1.2 kW Rec. eq. DOC comb 18 pF 82 pF 68 pF V CC V CC