AN22011A PANASONIC | Alldatasheet
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1Publication date: June 2002 SDD00024AEB AN22011A 3-beam MD system pre-amplifier ■ Overview The AN22011A incorporates such functions as RF signal processing, servo signal processing, ADIP signal processing and laser control. This is an RF IC that can constitute the MD system using 3-beam pick-up in com- bination with the digital signal processing LSI MN66621. The IC allows us to achieve a considerable low power dissipation as well as its low supply voltage operation CC = 2.1 V to 3.6 V) due to our introduction of digital matrix (PD = 11 mW at VCC = 2.1 V). The IC can be used in a wide range of applications from a stand-alone system to a portable system. ■ Features
- 3-beam system pick-up
- RF signal processing
- Servo signal processing
- Laser power control function
- Low supply voltage operation (2.1 V to 3.6 V)
- Ultra low power consumption (min. 11 mW)
- Thin package adopted (Mold thickness: 1 mm) ■ Applications
- MD player/recorder
- Home audio systems/mini systems Portable audio Car audio TQFP048-P-0707B (Lead-free package) Unit: mm 0.15 ±0.05 0.50±0.10 0.20±0.05 9.00±0.20 7.00±0.10 7.00±0.10 9.00±0.20 0.10+0.10 -0.05 0° to 8° 1.20 max. (0.75) (1.00) (0.75) (1.00) Seating plane 1348 1 12 0.50 M0.10 0.10
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■ Block Diagram PD PD E 48 13 47 14 46 15 45 16 RF1 44 17 VCC VCC 43 18 VREF 42 19 41 20 40 21 39 22 38 23 37 24 23 45 6 GND2 7 8 9 10 11 GND1 36 35 34 33 32 31 30 29 28 27 26 25 VREF VREF VREF VREF VREF VCC SW LDON 3 tap LPF 3 tap 3 tap × 1 BPF Switch Band gap MONIOFF 3TenvAGC EQ Bottom detector Peak detector NRFSTBY Switching signal × 2 BPF CLV2 NRFSTBY LDON CLV2 MONIOFF 3 tap 3 tap VREF VREF VREF Thermistor resistance Pickup Pickup Laser 3 tap VREF VREF VREF PD F PD D PD C PD B PD A PD IV RF2PD IV Microcomputer Servo LSI
Pin No. Symbol Description
26 OFSON Te stray light canceling operation
27 NREC Rec/playback switching signal input pin
28 RFSWHL Reflection ratio H/L switching signal
29 RFSWPG Pit/Grv switching signal input pin
30 GND2 GND pin 2
31 N.C.
32 MONIOFF 3TMON circuit control signal input pin
33 CLV2 ADIP BPF switching signal input pin
34 LDON APC circuit control signal input pin
35 NRFSTBY Standby control signal input pin
36 TEMP Temperature sensor amplifier output pin
37 TEMPIN Temperature sensor amplifier input pin
38 A A signal input pin
39 B B signal input pin
40 C C signal input pin
41 D D signal input pin
42 V REF Reference signal output pin
43 RF2 RF2 signal input pin
44 RF1 RF1 signal input pin
45 N.C. 46 N.C.
47 F F signal input pin
48 E E signal input pin
■ Pin Descriptions Pin No. Symbol Description
1 LDO LD amplifier output pin
2 LDIN LD amplifier reverse input pin
3 APCPD Photo diode light quantity detector pin
4 APCREF APC amplifier reference voltage input pin
5 ARFO RF amplifier output pin
6 N.C.
7 EQIN EQ input pin
8 CRFAGC RFAGC capacitor pin
9 OUTRF EFM output pin
10 N.C.
11 PEAK EFM bright level detection output pin
12 GND1 GND pin 1
13 BOTM EFM dark level detection output pin
14 CEA 3T envelope detection capacitor pin
15 MON3T 3T envelope output pin
16 EE E signal I-V converting output pin
17 FF F signal I-V converting output pin
18 V CC VCC pin
19 OFSIN Te stray light canceling pin
20 N.C.
21 FF2 (A + C) signal I-V converting output pin
22 FF1 (B + D) signal I-V converting output pin
23 N.C. 24 N.C.
25 ADIP ADIP signal output pin
■ Absolute Maximum Ratings Parameter Symbol Rating Unit Supply voltage V CC 4.0 V Supply current I CC 7.5 mA Setting pin upper limit *2 VINH 3.6 V Power dissipation *1 PD 30 mW Operating ambient temperature *1 Topr −30 to +85 °C Storage temperature *1 Tstg −55 to +125 °C Note) *1: Except for power dissipation, operating ambient temperature and storage temperature, all ratings are for T a = 25°C. *2: Setting pin refers to OFSON (pin 26), NREC (pin 27), RFSWHL (pin 28), RFSWPG (pin 29), MONIOFF (pin 32), CLV2 (pin 33), LDON (pin 34), NRFSTBY (pin 35).
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■ Recommended Operating Range Parameter Symbol Range Unit Supply voltage V CC 2.1 to 3.6 V Parameter Symbol Conditions Min Typ Max Unit No load consumption current 1 I TOTAL1 Normal mode 4.5 5.5 6.5 mA No load consumption current 2 I TOTAL2 Sleep mode 200 300 400 µA VREF offset ∆VOVB Normal mode −50 0 50 mV VREF output impedance Z VB I42 = ±1.5 mA 5 Ω LD amplifier OFF operation V LDOFF APC OFF mode 0.2 V LD amplifier gain playback mode G LDP APC ON mode −23 −20 −17 dB LD amplifier gain recording mode G LDR APC ON mode −5.5 −2.5 0.5 dB Temperature amplifier gain G TM V37 = VREF ± 0.75 V −20 2d B FF1 offset ∆VF1 Pit high reflection ratio mode −100 0 100 mV FF2 offset ∆VF2 Pit high reflection ratio mode −100 0 100 mV FF1 gain Z FIRO Pit high reflection ratio mode 46.2 57.7 69.2 k Ω pit high reflection ratio mode FF1 gain Z FIRA Pit low reflection ratio mode 197 250 303 k Ω pit low reflection ratio mode FF1 gain record mode Z FIRE Record mode 17.5 21.9 26.3 k Ω FF2 relative gain ∆ZF2RO Pit high reflection ratio mode −20 2d B pit high reflection ratio mode FF2 relative gain ∆ZF2RA Pit low reflection ratio mode −20 2d B pit low reflection ratio mode FF2 relative gain record mode ∆ZF2RE Record mode −20 2d B FF1 frequency characteristic ∆GF1 Pit high reflection ratio mode −9 −6 −3d B V38: 3 kHz, 30 kHz Sine wave FF2 frequency characteristic ∆GF2 Pit high reflection ratio mode −9 −6 −3d B V39: 3 kHz, 30 kHz Sine wave EE offset ∆VEE Pit high reflection ratio mode −750 −600 −450 mV FF offset ∆VFF Pit high reflection ratio mode −750 −600 −450 mV EE gain Z EERO Pit high reflection ratio mode 148 185 222 k Ω pit high reflection ratio mode EE gain Z EERA Pit low reflection ratio mode 776 970 1 164 k Ω pit low reflection ratio mode EE gain record mode Z EERE Record mode 88 110 132 k Ω FF relative gain ∆ZFFRO Pit high reflection ratio mode −20 2d B pit high reflection ratio mode FF relative gain ∆ZFFRA Pit low reflection ratio mode −20 2d B pit low reflection ratio mode ■ Electrical Characteristics at Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit FF relative gain record mode ∆ZFFRE Record mode −20 2d B EE frequency characteristics ∆GEE Pit high reflection ratio mode −6 −3 − 0.5 dB V48: 1.5 kHz, 15 kHz Sine wave FF frequency characteristics ∆GFF Pit high reflection ratio mode −6 −3 − 0.5 dB V47: 1.5 kHz, 15 kHz Sine wave Te stray light canceling operation ∆TOFS Ram mode 0.4 0.5 0.6 Stray light canceling mode ADIP gain G AD1 Record mode 24.0 27.0 30.0 dB Line double speed mode ADIP center frequency F AD1 Record mode 35.2 44.0 52.8 kHz Line double speed mode ADIP band width ∆FAD1 Record mode 23.7 29.6 35.5 kHz Line double speed mode ADIP relative gain typical ∆GAD2 Record mode −30 3d B speed mode Typical speed mode RF amplifier gain G RFG V43: 100 kHz Sine wave 19 22 25 dB groove mode Groove mode RF amplifier gain G RFPL V43: 100 kHz Sine wave 3 6 9 dB pit low reflection ratio mode Pit low reflection ratio mode RF amplifier gain G RFPH V43: 100 kHz Sine wave −11.5 −8.5 −5.5 dB pit high reflection ratio mode Pit high reflection ratio mode RF amplifier frequency characteristics ∆GRFG V43: 5 MHz Sine wave −3 dB groove mode Groove mode RF amplifier frequency characteristics∆GRFPL V43: 5 MHz Sine wave −3 dB pit low reflection ratio mode Pit low reflection ratio mode RF amplifier frequency characteristics∆GRFPH V43: 5 MHz Sine wave −3 dB pit high reflection ratio mode Pit high reflection ratio mode EQ boost gain ∆GEQ V7: 400 kHz, 1.44 MHz Sine wave 2.5 3.5 4.5 dB V8 = VREF AGC operation V OMRFV V7: 500 kHz Sine wave 0.4 0.5 0.6 V[p-p] AGC discharge current I AGC1 V7: sin 500 mV[p-p], 720 kHz −140 −110 −80 µA V8 = VREF AGC charging current I AGC2 V7 = VREF, V8 = VREF 0.1 0.4 0.7 µA EFM Peak peak detecting offset ∆VPE V7 = VREF −200 0 200 mV EFM Peak peak detecting level V PEAK V7: 720 kHz AM modulation 80 110 140 mV[p-p] Sine wave (1 kHz, 30%) EFM bottom detecting offset ∆VBO V7 = VREF −200 0 200 mV EFM bottom detecting relative level ∆VBOTM V7: 720 kHz AM modulation −20 0 20 mV[p-p] Sine wave (1 kHz, 30%) 3T element envelope V 3TMON V7: 720 kHz AM modulation 125 185 245 mV[p-p] extracting level Sine wave (5 kHz, 5%) ■ Electrical Characteristics at Ta = 25°C (continued)
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■ Usage Notes 1. Operation mode setting
- Gain switch setting MONIOFF (Pin32) Operation mode H 3T detection circuit off L 3T detection circuit on NREC (Pin27) RFSWHL (Pin28) RFSWPG (Pin29) Operation mode H H H Pit high reflection ratio mode H L H Pit low reflection ratio mode H L L Groove mode L L L Record mode
- 3T detection circuit mode switch setting CLV2 (Pin33) Operation mode BPF center frequency H Typical speed mode f O = 22.0 kHz L Line double speed mode f O = 44.0 kHz
- ADIP BPF mode switch setting Note) The values shown on the list are for design purpose. LDON (Pin34) Operation mode H APC circuit on L APC circuit off
- APC mode setting NRFSTBY (Pin35) Operation mode H Normal operation L Power saving operation
- Power saving mode setting OFSON (Pin26) Operation mode H Cancellation circuit on L Cancellation circuit off
- Te stray light cancellation setting Note) This function is valid only for reading on the writable disk.
■ Usage Notes (continued) 2. Setting pin input voltage Set the input voltages for OFSON (Pin26), NREC (Pin27), RFSWHL (Pin28), RFSWPG (Pin29), MONIOFF (Pin32), CLV2 (Pin33), LDON (Pin34) and NRFSTBY (Pin35). As listed below. Setting Input voltage H 1.4 V to 3.6 V L 0.7 V or less The related equivalent circuits are as follows. 22.8 kΩ NREC RFSWHL RFSWPG CLV2 MONIOFF 33 kΩ 100 kΩ 1 kΩ OFSON 160 kΩ 140 kΩ 60 kΩ NRFSTBY 140 kΩ 60 kΩ 100 kΩ 200 kΩ 33 kΩ LDON Note) The resistance values are for designing.
Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) An export permit needs to be obtained from the competent authorities of the Japanese Govern- ment if any of the products or technologies described in this book and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this book is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this book. (4) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instru- ments and household appliances). Consult our sales staff in advance for information on the following applications:
- Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
- Any applications other than the standard applications intended. (5) The products and product specifications described in this book are subject to change without no- tice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.