AN1101SSM PANASONIC | Alldatasheet
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Technical content
1Publication date: August 2002 SFB00001CEB AN1101SSM CMOS single power supply ■ Overview AN1101SSM is an operational amplifier with a single power supply by CMOS diffusion process. It has low current-consumption compared to general purpose operational amplifier by bipolar diffusion process.
0 V to V
DD is available for both input voltage and output voltage. And this IC is widely applicable to the buttery- driven equipment and to many amplifier circuits which adopt small package products. ■ Features
- Low current-consumption: IDD = 55 µA (typ.), VDD = 3 V
- Operating input/output voltage range: 0 V to VDD
- Small offset voltage: 0.5 mV (typ.)
- Small input bias current: 1 pA (typ.)
- Operating supply voltage range: 2.5 V to 5.5 V or ±1.25 V to ±2.75 V ■ Applications
- Various small-size general consumer electronics equipment ■ Block Diagram Pin No. Symbol Description 1V OUT Output
2 GND (V SS) Ground, V SS (negative supply) at using two power supply
3V IN+ Input (positive) 4V IN− Input (negative) 5V DD Power supply ■ Pin Descriptions Unit: mm SSMINI-5DA (Lead-free package) 0 to 0.10 21 0.200.20 1.20±0.10 1.60±0.10 1.00±0.10 1.60±0.10 0.50 Seating plane 0.60 max. 0.08+0.10 -0.05 0.20+0.10 -0.05 0.50 0.10 M0.10 VOUT VDD GND (VSS) VIN+ VIN− Note) The AN1101SSM has been designed for general consumer electronics equipment, not for the specific one requiring such a high reliability that may prevent it from threatening the human lives.
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■ Electrical Characteristics at VDD = 3.0 V, VSS = GND, Ta = 25°C ± 2°C ■ Absolute Maximum Ratings Parameter Symbol Rating Unit Supply voltage V DD 5.6 V Differential input voltage DV IN ±5.6 V Input voltage V IN VSS to VDD V Supply current I DD mA Power dissipation *2 PD 50 mW Operating ambient temperature *1 Topr −30 to +85 °C Storage temperature *1 Tstg −55 to +125 °C Note) 1. *1: Except for the operating ambient temperature and storage temperature, all ratings are for T a = 25°C. *2: The value at T a = +85°C. 2. This IC is not suitable for car electrical equipment. ■ Recommended Operating Range Parameter Symbol Range Unit Supply voltage V DD 2.5 to 5.5 V ±1.25 to ±2.75 Note) * : Except for the supply voltage ripple rejection ratio (SVRR), V DD = 3 V.
- Design reference data Note) The characteristics listed below are theoretical values based on the IC design and are not guaranteed. Parameter Symbol Conditions Min Typ Max Unit Input offset voltage V IO Buffer circuit 0.5 5.5 mV Common-mode input voltage CMV IN RS = 10 kΩ, RF = 10 kΩ 0 3V Open-loop gain GV f = 100 Hz 60 90 dB Maximum output amplitude voltage 1 V OH RL ≥ 10 kΩ 2.90 2.98 V Maximum output amplitude voltage 2 V OL RL ≥ 10 kΩ 0.01 0.05 V Common-mode input voltage CMRR V IN = 0.0 V to 3.0 V, RS = RF = 10 kΩ 50 65 dB rejection ratio Supply voltage ripple rejection ratio * SVRR V DD = 2.5 V to 5.5 V 55 70 dB Supply current I DD No load 55 100 µA Parameter Symbol Conditions Reference Unit Offset current I O 1p A Input bias current I IO 1p A Slew rate SR R L ≥ 10 kΩ 0.35 V/ µs Zero-cross frequency f T AV = 1 0.8 MHz
■ Technical Data
- PD Ta curve of SSMINI-5DA PD Ta
- Main characteristics Supply current Supply voltage Low-level output voltage Output flow-in current Power dissipation PD (W) 0.000 0.050 0.100 0.120 0.150 Independent IC without a heat sink R th( j-a) = 833.3°C/W 0 25 125 Ambient temperature Ta (°C) 50 85 75 100 0.200 62.5 3.5 4.53 4 5 5.5 Supply voltage VDD (V) Supply current IDD (µA) Buffer circuit VIN+ = VDD / 2 No load 0.2 0.4 0.6 0.8 1.0 1.2 501234 Output flow-in current IO (mA) Low-level output voltage VOL (V) Buffer circuit VDD = 3 V VIN+ = 0 V High-level output voltage Output flow-out current Slew rate SR 501234 Buffer circuit VDD = 3 V VIN+ = 3 V 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 Output flow-out current −IO (mA) High-level output voltage VOL (V) Buffer circuit VDD = 3 V No load 0 V 3 V 01 0 2 0 30 40 50 (µs) Output Input 1 V 2 V 0 V 3 V 1 V 2 V
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■ Technical Data (continued)
- Main characteristics (continued) Offset voltage Ambient temperature Supply current Ambient temperature Voltage gain · Phase Frequency characteristics 100−50 −25 0 25 75 50 Ambient temperature Ta (°C) Offset voltage VIO (mV) Buffer circuit VDD = 3 V VIN+ = VDD / 2 100−50 −25 0 25 75 50 Ambient temperature Ta (°C) Supply current IDD (µA) Buffer circuit VDD = 3 V VIN+ = VDD / 2 Voltage gain (dB) Phase ( ° ) 10M1M100k100 10k2k Frequency f (Hz) VDD = 3 V AV = 40 dB No load −20 −10 Voltage gain −45 180 135 Phase ■ Application Circuit Example VOUT VDD GND (VSS) VIN+ VIN− 0.1 µF
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- Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
- Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maxi- mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other- wise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.