AMS930N ANALOGPOWER | Alldatasheet

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Technical content

Asymmetric Dual N-Channel 30-V (D-S) MOSFET VDS (V) ID (A) Q1 20 7.7 Q2 30 10.2 Symbol Q1 Limit Q2 Limit Units VDS 20 30 VGS ±8 ±20 TA=25°C 7.7 10.2 TA=70°C 5.6 7.4 IDM 30 40 IS 3 3.8 A TA=25°C 2.5 2.5 TA=70°C 1.3 1.3 TJ, Tstg °C Symbol Maximum Units 120 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature t <= 10 secMaximum Junction-to-Ambient a 28 @ VGS = 5V 16 @ VGS = 5V V Steady State RθJA A W °C/W Parameter THERMAL RESISTANCE RATINGS Continuous Drain Current a ID Power Dissipation a PD Parameter -55 to 150 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) PRODUCT SUMMARY rDS(on) (mΩ) Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Operating Junction and Storage Temperature Range Drain-Source Voltage Gate-Source Voltage Key Features:

  • Low rDS(on) trench technology
  • Low thermal impedance
  • Fast switching speed Typical Applications:
  • DC/DC Conversion DFN3X3-8L © Preliminary 1 Publication Order Number: DS_AMS930N_1A

Parameter Symbol Test Conditions Min Typ Max Unit VDS = VGS, ID = 250 uA (Q1) 0.4 V VDS = VGS, ID = 250 uA (Q2) 1 V VDS = 0 V, VGS = ±8 V (Q1) ±100 nA VDS = 0 V, VGS = ±20 V (Q2) ±100 nA VDS = 16 V, VGS = 0 V (Q1) 1 VDS = 24 V, VGS = 0 V (Q2) 1 VDS = 5 V, VGS = 4.5 V (Q1) 10 A VDS = 5 V, VGS = 10 V (Q2) 15 A VGS = 5 V, ID = 6.2 A (Q1) 28 mΩ VGS = 5 V, ID = 8.2 A (Q2) 16 mΩ VDS = 15 V, ID = 6.2 A (Q1) 7 S VDS = 15 V, ID = 8.2 A (Q2) 13 S IS = 1.5 A, VGS = 0 V (Q1) 0.74 V IS = 1.9 A, VGS = 0 V (Q2) 0.77 V Total Gate Charge Qg 7 Gate-Source Charge Qgs 1.1 Gate-Drain Charge Qgd 2.3 Turn-On Delay Time td(on) 10 Rise Time tr 23 Turn-Off Delay Time td(off) 36 Fall Time tf 16 Input Capacitance Ciss 439 Output Capacitance Coss 78 Reverse Transfer Capacitance Crss 68 Total Gate Charge Qg 11 Gate-Source Charge Qgs 5.0 Gate-Drain Charge Qgd 3.6 Turn-On Delay Time td(on) 7 Rise Time tr 6 Turn-Off Delay Time td(off) 30 Fall Time tf 9 Input Capacitance Ciss 1379 Output Capacitance Coss 156 Reverse Transfer Capacitance Crss 116 IGSS Drain-Source On-Resistance a rDS(on) Forward Transconductance a gfs Static

Electrical Characteristics

Gate-Source Threshold Voltage On-State Drain Current a Zero Gate Voltage Drain Current Gate-Body Leakage Diode Forward Voltage a VSD VDS = 15 V, VGS = 4.5 V, ID = 8.2 A ns VDS = 15 V, VGS = 0 V, f = 1 MHz pF VDS = 10 V, VGS = 4.5 V, ID = 6.2 A VGS(th) uA VDS = 15 V, VGS = 0 V, f = 1 MHz pF nC ID(on) IDSS VDD = 15 V, RL = 1.8 Ω, ID = 8.2 A, VGEN = 10 V, RGEN = 6 Ω ns Dynamic b nC VDD = 10 V, RL = 2.9 Ω, ID = 6.2 A, VGEN = 4.5 V, RGEN = 6 Ω © Preliminary 2 Publication Order Number: DS_AMS930N_1A

  1. On-Resistance vs. Drain Current 2. Transfer Characteristics 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 5. Output Characteristics 6. Capacitance Typical Electrical Characteristics - Q1 0.02 0.04 0.06 0.08 0 1 2 3 4 5 RDS(on) - On-Resistance(Ω) ID-Drain Current (A) 3V,3.5V,4V,4.5V,5V,6V 2.5V 1.8V 0 0.05 0.1 0.15 0.2 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 6V,5V,4.5V, 4V,3.5V,3V 1.8V 2.5V 0.05 0.1 0.15 0.2 0 2 4 6 RDS(on) - On-Resistance(Ω) VGS - Gate-to-Source Voltage (V) TJ = 25°C 0.01 0.1 IS - Source Current (A) VSD - Source-to-Drain Voltage (V) TJ = 25°C 100 200 300 400 500 600 700 800 0 5 10 15 20 Capacitance (pf) VDS-Drain-to-Source Voltage (V) Ciss Coss Crss F = 1MHz 0 1 2 3 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) TJ = 25°C ID = 6.2A © Preliminary 3 Publication Order Number: DS_AMS930N_1A
  1. Gate Charge 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 8. Normalized On-Resistance Vs Junction Temperature 11. Normalized Thermal Transient Junction to Ambient Typical Electrical Characteristics - Q1 0.01 0.1 100 0.1 1 10 100 1000 ID Current (A) VDS Drain to Source Voltage (V) 10 uS 100 uS 1 mS 10 mS 100 mS

1 SEC

10 SEC

100 SEC

0.001 0.01 0.1 1 10 100 1000 PEAK TRANSIENT POWER (W) t1 TIME (SEC) 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) RθJA(t) = r(t) + RθJA 0.2 0.1 0.05 0.02 P(pk) D = 0.5 Single Pulse TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.5 1.5 -50 -25 0 25 50 75 100 125 150 RDS(on) - On-Resistance(Ω) (Normalized) TJ -JunctionTemperature(°C) 0 5 10 15 VGS-Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) RθJA = 120 °C /W ID = 6.2A VDS = 10V © Preliminary 4 Publication Order Number: DS_AMS930N_1A

  1. On-Resistance vs. Drain Current 2. Transfer Characteristics 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 5. Output Characteristics 6. Capacitance Typical Electrical Characteristics - Q2 0.01 0.02 0.03 0.04 0.05 0 5 10 15 RDS(on) - On-Resistance(Ω) ID-Drain Current (A) 3.5V 4.5V,5V,5.5V,6V,8V,10V ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 10V,8V,6V, 5.5V,5V,4.5V 3.5V 0.02 0.04 0.06 0 2 4 6 8 10 RDS(on) - On-Resistance(Ω) VGS - Gate-to-Source Voltage (V) TJ = 25°C 0 1 2 3 4 5 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) TJ = 25°C 0.01 0.1 100 IS - Source Current (A) VSD - Source-to-Drain Voltage (V) TJ = 25°C 200 400 600 800 1000 1200 1400 1600 1800 2000 0 5 10 15 20 Capacitance (pf) VDS-Drain-to-Source Voltage (V) Ciss Coss Crss F = 1MHz ID = 8.2A © Preliminary 5 Publication Order Number: DS_AMS930N_1A
  1. Gate Charge 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation Typical Electrical Characteristics - Q2 8. Normalized On-Resistance Vs Junction Temperature 11. Normalized Thermal Transient Junction to Ambient 0.01 0.1 100 0.1 1 10 100 1000 ID Current (A) VDS Drain to Source Voltage (V) 10 uS 100 uS 1 mS 10 mS 100 mS

0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) RθJA(t) = r(t) + RθJA 0.2 0.1 0.05

0.02 P(pk)

D = 0.5 Single Pulse TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.001 0.01 0.1 1 10 100 1000 PEAK TRANSIENT POWER (W) t1 TIME (SEC) 0.5 1.5 -50 -25 0 25 50 75 100 125 150 RDS(on) - On-Resistance(Ω) (Normalized) TJ -JunctionTemperature(°C) 0 5 10 15 20 25 VGS-Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) RθJA = 120 °C /W VDS = 15V ID = 8.2A © Preliminary 6 Publication Order Number: DS_AMS930N_1A

Package Information

© Preliminary 7 Publication Order Number: DS_AMS930N_1A