AMR930N ANALOGPOWER | Alldatasheet

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Technical content

Asymmetric Dual N-Channel 30-V (D-S) MOSFET VDS (V) ID (A) Symbol Q1 Limit Q2 Limit Units VDS 30 30 VGS ±20 ±20 TA=25°C 14 20 TA=70°C 11 16 IDM 50 50 IS 3.3 3.4 A TA=25°C 2.5 2.5 TA=70°C 1.6 1.6 TJ, Tstg °C Symbol Maximum Units Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature rDS(on) (mΩ) 9 @ VGS = 10V 15 @ VGS = 4.5V 3.5 @ VGS = 10V Parameter Drain-Source Voltage Gate-Source Voltage ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) t <= 10 sec Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Maximum Junction-to-Ambient a Steady State RθJA A W °C/W Parameter THERMAL RESISTANCE RATINGS Continuous Drain Current a ID Power Dissipation a PD Operating Junction and Storage Temperature Range -55 to 150 V PRODUCT SUMMARY 30 5.8 @ VGS = 4.5V Key Features:

  • Low rDS(on) trench technology
  • Low thermal impedance
  • Fast switching speed Typical Applications:
  • DC/DC Conversion DFN5X6-8L Preliminary 1 Publication Order Number: DS_AMR930N_1A

Parameter Symbol Test Conditions Min Typ Max Unit VDS = VGS, ID = 250 uA (Q1) 1 V VDS = VGS, ID = 250 uA (Q2) 1 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ±20 V ±100 nA VDS = 24 V, VGS = 0 V (Q1) 1 VDS = 24 V, VGS = 0 V (Q2) 1 VDS = 5 V, VGS = 10 V (Q1) 20 A VDS = 5 V, VGS = 10 V (Q2) 20 A VGS = 10 V, ID = 11.6 A (Q1) 9 VGS = 4.5 V, ID = 9.3 A (Q1) 15 VGS = 10 V, ID = 16.3 A (Q2) 3.5 VGS = 4.5 V, ID = 13 A (Q2) 5.8 VDS = 15 V, ID = 11.6 A (Q1) 13 S VDS = 15 V, ID = 16.3 A (Q2) 15 S IS = 1.6 A, VGS = 0 V (Q1) 0.76 V IS = 1.7 A, VGS = 0 V (Q2) 0.73 V Total Gate Charge Qg 11 Gate-Source Charge Qgs 5 Gate-Drain Charge Qgd 3.5 Turn-On Delay Time td(on) 7 Rise Time tr 6 Turn-Off Delay Time td(off) 28 Fall Time tf 9 Input Capacitance Ciss 1379 Output Capacitance Coss 156 Reverse Transfer Capacitance Crss 116 Total Gate Charge Qg 35 Gate-Source Charge Qgs 14 Gate-Drain Charge Qgd 13 Turn-On Delay Time td(on) 11 Rise Time tr 16 Turn-Off Delay Time td(off) 76 Fall Time tf 27 Input Capacitance Ciss 5767 Output Capacitance Coss 420 Reverse Transfer Capacitance Crss 384 On-State Drain Current a Static

Electrical Characteristics

Gate-Source Threshold Voltage Drain-Source On-Resistance a Dynamic b VDS = 15 V, VGS = 4.5 V, ID = 11.6 A Forward Transconductance a gfs Diode Forward Voltage a VDS = 15 V, VGS = 4.5 V, ID = 16.3 A nC VDS = 15 V, RL = 1.3 Ω, ID = 11.6 A, VGEN = 10 V, RGEN = 6 Ω ns VDS = 15 V, VGS = 0 V, f = 1 Mhz pF VGS(th) uA VDS = 15 V, VGS = 0 V, f = 1 Mhz pF nC ID(on) IDSS rDS(on) mΩ mΩ VDS = 15 V, RL = 1 Ω, ID = 16.3 A, VGEN = 10 V, RGEN = 6 Ω ns VSD Zero Gate Voltage Drain Current Preliminary 2 Publication Order Number: DS_AMR930N_1A

  1. On-Resistance vs. Drain Current 2. Transfer Characteristics 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 5. Output Characteristics 6. Capacitance Typical Electrical Characteristics - Top Die 0.01 0.02 0.03 0.04 0.05 0 5 10 15 RDS(on) - On-Resistance(Ω) ID-Drain Current (A) 3.5V 6V,8V,10V 4.5V 0 0.1 0.2 0.3 0.4 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 10V,8V,6V 3.5V 4.5V 0.01 0.02 0.03 0.04 0.05 0 2 4 6 8 10 RDS(on) - On-Resistance(Ω) VGS - Gate-to-Source Voltage (V) TJ = 25°C 0.01 0.1 100 IS - Source Current (A) VSD - Source-to-Drain Voltage (V) TJ = 25°C 500 1000 1500 2000 0 5 10 15 20 Capacitance (pf) VDS-Drain-to-Source Voltage (V) Ciss Coss Crss F = 1MHz 0 1 2 3 4 5 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) TJ = 25°C ID = 11.6A Preliminary 3 Publication Order Number: DS_AMR930N_1A
  1. Gate Charge 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation Typical Electrical Characteristics - Top Die 8. Normalized On-Resistance Vs Junction Temperature 11. Normalized Thermal Transient Junction to Ambient 0.01 0.1 100 1000 0.1 1 10 100 1000 ID Current (A) VDS Drain to Source Voltage (V) 10 uS 100 uS 1 mS 10 mS 100 mS

1 SEC

10 SEC

100 SEC

0.001 0.01 0.1 1 10 100 1000 PEAK TRANSIENT POWER (W) t1 TIME (SEC) 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) RθJA(t) = r(t) + RθJA 0.2 0.1 0.05 0.02 P(pk) D = 0.5 Single Pulse TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.5 1.5 -50 -25 0 25 50 75 100 125 150 RDS(on) - On-Resistance(Ω) (Normalized) TJ -JunctionTemperature(°C) 0 5 10 15 20 25 VGS-Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) RθJA = 90 °C /W ID = 11.6A VDS = 15V Preliminary 4 Publication Order Number: DS_AMR930N_1A

  1. On-Resistance vs. Drain Current 2. Transfer Characteristics 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 5. Output Characteristics 6. Capacitance Typical Electrical Characteristics - Bottom Die 1000 0.005 0.01 0.015 0 5 10 15 20 RDS(on) - On-Resistance(Ω) ID-Drain Current (A) 3.5V 6V,8V,10V 4.5V 0 0.05 0.1 0.15 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 10V,8V,6V 3.5V 4.5V 0.01 0.02 0.03 0.04 0 2 4 6 8 10 RDS(on) - On-Resistance(Ω) VGS - Gate-to-Source Voltage (V) TJ = 25°C 0 1 2 3 4 5 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) TJ = 25°C 0.01 0.1 100 IS - Source Current (A) VSD - Source-to-Drain Voltage (V) TJ = 25°C 1000 2000 3000 4000 5000 6000 7000 8000 9000 0 5 10 15 20 Capacitance (pf) VDS-Drain-to-Source Voltage (V) Ciss Coss Crss F = 1MHz ID = 16.3A Preliminary 5 Publication Order Number: DS_AMR930N_1A
  1. Gate Charge 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation Typical Electrical Characteristics - Bottom Die 8. Normalized On-Resistance Vs Junction Temperature 11. Normalized Thermal Transient Junction to Ambient 0.01 0.1 100 1000 0.1 1 10 100 1000 ID Current (A) VDS Drain to Source Voltage (V) 10 uS 100 uS 1 mS 10 mS 100 mS

0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) RθJA(t) = r(t) + RθJA 0.2 0.1 0.05

0.02 P(pk)

D = 0.5 Single Pulse TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 100 150 200 0.001 0.01 0.1 1 10 100 1000 PEAK TRANSIENT POWER (W) t1 TIME (SEC) 0.5 1.5 -50 -25 0 25 50 75 100 125 150 RDS(on) - On-Resistance(Ω) (Normalized) TJ -JunctionTemperature(°C) 0 20 40 60 80 VGS-Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) RθJA = 90 °C /W VDS = 15V ID = 16.3A Preliminary 6 Publication Order Number: DS_AMR930N_1A

Package Information

Preliminary 7 Publication Order Number: DS_AMR930N_1A