AMMC-5026 AVAGO | Alldatasheet

Document overview

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Technical content

Features

  • Frequency range: 2 – 35 GHz
  • Gain: 10.5 dB
  • Gain flatness: ±0.8 dB Return loss: Input 17 dB, Output: 15 dB
  • Output power (P-1dB): 24 dBm at 10 GHz 23 dBm at 20 GHz 22 dBm at 26 GHz
  • Noise figure (6–19 GHz): ≤4 dB

Applications

  • Broadband gain block
  • Broadband driver amplifier
  • 10 Gb/s Fiber Optics Absolute Maximum Ratings [1] Symbol Parameters/Conditions Units Min. Max. Vdd Positive Drain Voltage V 10 Idd T otal Drain Current mA 450 Vg1 First Gate Voltage V -5 Ig1 First Gate Current mA -9 +5 Vg2 Second Gate Voltage V -3 +3.5 Ig2 Second Gate Current mA -10 Pin CW Input Power dBm 23 Tch Channel T emperature °C +150 Tb Operating Backside Temperature °C -55 Tstg Storage T emperature °C -65 +165 Tmax Max. Assembly T emp (60 sec max) °C +300 Notes: 1. Operation in excess of any one of these conditions may result in permanent damage to this device. Chip Size: 3050 x 840 µm (119 x 33 mils) Chip Size T olerance: ±10 µm (±0.4 mils) Chip Thickness: 100 ± 10 µm (4 ± 0.4 mils) Pad Dimensions: 75 x 75 µm (2.9 ± 0.4 mils)

AMMC-5026 DC Specifications/Physical Properties[1] Symbol Parameters and Test Conditions Units Min. Typ. Max. Idss Saturated Drain Current (Vdd=7 V , Vg1=0 V , Vg2=open circuit) mA 250 350 450 Vp1 First Gate Pinch-off Voltage (Vdd=7 V , Idd=0.1 Idss, Vg2=open circuit) V -1.2 Vg2 Second Gate Self-bias Voltage (Vdd=7 V , Idd=150 mA, Vg2=open circuit) V 3.5 Idsoff First Gate Pinch-off Current mA 75 (Vg1)( V dd=7 V, Vg1=3.5 V, Vg2=open circuit) θch-b Thermal Resistance[2] (Backside temperature, Tb = 25°C) °C/W 28 Notes: 1. Backside temperature Tb = 25°C unless otherwise noted. 2. Channel-to-backside Thermal Resistance (θch-b) = 38°C/W at Tchannel (Tc) = 150°C as measured using the liquid crystal method. Thermal Resistance at backside temperature (Tb) = 25°C calculated from measured data. RF Specifications[3,4] (Vdd = 7V, Idd (Q) = 150 mA, Zin = Z0 = 50Ω) Symbol Parameters and Test Conditions Units Min. Typ. Max. |S21|2 Small-signal Gain dB 8.5 10.5 12.5 ∆|S21|2 Small-signal Gain Flatness dB ±0.75 ±1.5 RLin Input Return Loss dB 13 17 RLout Output Return Loss dB 12 15 |S12|2 Isolation dB 23 26 P-1dB Output Power @ 1 dB Gain Compression f = 10 GHz dBm 22 24 Psat Saturated Output Power f = 10 GHz dBm 26 OIP3 Output 3 rd Order Intercept Point, dBm 31 RFin1 = RFin2 = - 20 dBm, f = 10 GHz, ∆f = 2 MHz NF Noise Figure f = 10 GHz dB 3.6 f = 20 GHz dB 4.3 H2 Second Harmonic (P in = 12 dBm at 10 GHz) dBc -20 -17.5 H3 Third Harmonic (P in = 12 dBm at 10 GHz) dBc -30 -28 Notes: 1. Data measured in wafer form, T chuck = 25°C. 2. 100% on wafer RF test is done at frequency = 2, 10, 22, 26.5, and 35 GHz, except as noted.

AMMC-5026 T ypical Scattering Parameters[1] (Tchuck = 25°C, Vdd = 7 V, Idd = 150 mA) Freq. S 11 S21 S12 S22 GHz dB Mag Ang dB Mag Ang dB Mag Ang dB Mag Ang Note: 1. Data obtained from on-wafer measurements.

AMMC-5026 T ypical Scattering Parameters[1] (Tchuck = 25°C, Vdd = 8 V, Idd = 150 mA) Freq. S 11 S21 S12 S22 GHz dB Mag Ang dB Mag Ang dB Mag Ang dB Mag Ang Note: 1. Data obtained from on-wafer measurements.

and a negative gate supply (Vg1).

7 V and Idd = 150 mA for best

required if there are DC paths. assembly temperature and time. Figure 15. AMMC-5026 Schematic. should be handled with care.

  1. Buckbee-Mears Corporation,