AMMC-2008 AVAGO | Alldatasheet

Document overview

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Technical content

Features

  • Wide frequency range: DC – 50 GHz
  • Single pole double throw switch
  • Low insertion loss: 2.3 dB (max.) at 40 GHz
  • High isolation: 25 dB (min.) at 40 GHz
  • Medium input power: P-1dB: +14 dBm

Applications

  • Instrumentation
  • Communications
  • Radar
  • ECM
  • EW
  • Fiber optics
  • Pulse modulation
  • Port isolation
  • Transfer switching
  • High speed switching
  • Replacement of mechanical switches Absolute Maximum Ratings[1] Symbol Parameters/Conditions Units Min. Max. Vsel Select Voltages 1 & 2 V -8 +1.4 Pin RF Input Power dBm +20 Tb Die Backside Temperature °C +140 Tstg Storage Temperature °C -65 +165 Tmax Max. Assembly Temp °C +300 (60 sec max) Note: 1. Operation in excess of any one of these conditions may result in permanent damage to this device. Chip Size: 930 x 630 µm (36.6 x 24.8 mils) Chip Size Tolerance: ±10 µm (±0.4 mils) Chip Thickness: 100 ± 10 µm (4 ± 0.4 mils) Pad Dimensions: 80 x 80 µm (3.2 x 3.2 mils)

AMMC-2008 DC Specifications[1] Symbol Parameters and Test Conditions Units Min. Typ. Max. Isel1 Leakage Current at Vsel1 = +0 V, Vsel2 = -3 V µA 20 Isel1 Leakage Current at Vsel1 = -3 V, Vsel2 = +0 V µA -20 Isel2 Leakage Current at Vsel2 = +0 V, Vsel1 = -3 V µA 20 Isel2 Leakage Current at Vsel2 = -3 V, Vsel1 = +0 V µA -20 Note: 1. Backside temperature Tb = 25°C unless otherwise noted. RF Specifications[1,2] (Zin = Zout = 50Ω, Vsel1 = -3V, Vsel2 = 0V) Symbol Parameters and Test Conditions Freq. Units Min. Typ. Max. IL Insertion Loss, RFin to RFout (ON throw) 2 GHz dB 1.6 2 25 GHz 1.6 2 40 GHz 2.0 2.3 ISO Isolation, RFin to RFout (OFF throw) 2 GHz dB 46 49

25 GHz 30 35

40 GHz 25 28

RLin Input Return Loss 2 GHz dB 15 16.5

40 GHz 15 23

RLout-on Output Return Loss (ON throw) 2 GHz dB 15 16.5

40 GHz 15 18

RLout-off Output Return Loss (OFF throw) 2 GHz dB 4.5 40 GHz 4.5 P-1dB Input Power at 1 dB Gain Compression 25 GHz dBm +14 H2 2nd Harmonic, Pout = +5 dBm 2 GHz dBc -48 -45

12 GHz -43 -40

H3 3rd Harmonic, Pout = +5 dBm 2 GHz dBc -60 -50

12 GHz -60 -50

IP3 Input 3rd Order Intercept Point, dBm 2 GHz +27 +32 RFin1=RFin2 = +5 dBm, ∆f = 2 MHz 12 GHz +27 +32 Control Switching Speed[3] 10% – 90% rise time ps 100 90% – 10% fall time ps 90 Notes: 1. Data measured in wafer form, Tchuck= 25°C. 2. 100% on-wafer RF test is done at frequency = 2, 10, 20, 30 and 40 GHz, except as noted. 3. Typical Vsel switching speed measured using Pulse Generator Model PG5000A. Measurement limited to rise/fall time of Pulse Generator.

Figure 1. Insertion Loss. Figure 2. Isolation. Figure 3. Return Loss. Figure 4. Gain Compression vs. Input Power.

2 GHz

12 GHz

Figure 5. Harmonics vs. Input Power fo=2 GHz. Figure 6. Harmonics vs. Input Power fo=12 GHz. Figure 7. Intermodulation Products vs. Pin at Figure 8. Intermodulation Products vs. Pin at

AMMC-2008 Typical Scattering Parameters[1] (Tchuck = 25°C, Vsel1 = -3 V, Vsel2 = 0 V) RF Out1: OFF (terminated in 50-ohms), RF Out2: ON Freq. S11 S21 S12 S22 GHz dB Mag Phase dB Mag Phase dB Mag Phase dB Mag Phase Note: 1. Data obtained from on-wafer measurements.

AMMC-2008 Typical Scattering Parameters[1] (Tchuck = 25°C, Vsel1 = 0V, Vsel2 = -3V) RF Out1: ON, RF Out2: OFF (terminated in 50-ohms) Freq. S11 S21 S12 S22 GHz dB Mag Phase dB Mag Phase dB Mag Phase dB Mag Phase Note: 1. Data obtained from on-wafer measurements.