AMA520C ANALOGPOWER | Alldatasheet

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N & P-Channel 20-V (D-S) MOSFET VDS (V) ID(A) 4.5 4.2 -4.5 -4.2 Symbol Nch Limit Pch Limit Units VDS 20 -20 VGS ±8 ±8 TA=25°C 4.5 -4.5 TA=70°C 3.9 3.8 Pulsed Drain Current b IDM 20 -20 Continuous Source Current (Diode Conduction) a IS 2.6 -2.5 A TA=25°C 1.5 1.5 TA=70°C 0.95 0.95 Operating Junction and Storage Temperature Range TJ, Tstg °C Symbol Maximum Units Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature -55 to 150 V Steady State RθJA A W °C/W Parameter THERMAL RESISTANCE RATINGS Continuous Drain Current a ID Power Dissipation a PD Parameter Drain-Source Voltage Gate-Source Voltage ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) t <= 10 sec 58 @ VGS = 4.5V 82 @ VGS = 2.5V -20 Maximum Junction-to-Ambient a 112 @ VGS = -4.5V 172 @ VGS = -2.5V PRODUCT SUMMARY rDS(on) (mΩ) Key Features:

  • Low rDS(on) trench technology
  • Low thermal impedance
  • Fast switching speed Typical Applications:
  • White LED boost converters
  • Automotive Systems
  • Industrial DC/DC Conversion Circuits Key Features:
  • Low rDS(on) trench technology
  • Low thermal impedance
  • Fast switching speed Typical Applications:
  • White LED boost converters
  • Automotive Systems
  • Industrial DC/DC Conversion Circuits DFN2X2-6L © Preliminary 1 Publication Order Number: DS_AMA520C_1B

Parameter Symbol Test Conditions Min Typ Max Unit VDS = VGS, ID = 250 uA (N-ch) 0.3 V VDS = VGS, ID = -250 uA (P-ch) -0.3 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ±8 V ±100 nA VDS = 16 V, VGS = 0 V (N-ch) 1 VDS = -16 V, VGS = 0 V (P-ch) -1 VDS = 5 V, VGS = 4.5 V (N-ch) 10 A VDS = -5 V, VGS = -4.5 V (P-ch) -10 A VGS = 4.5 V, ID = 3.6 A (N-ch) 58 VGS = 2.5 V, ID = 3.4 A (N-ch) 82 VGS = -4.5 V, ID = -3.6 A (P-ch) 112 VGS = -2.5 V, ID = -3.4 A (P-ch) 172 VDS = 10 V, ID = 3.6 A (N-ch) 10 S VDS = -10 V, ID = -3.6 A (P-ch) 5 S IS = 1.3 A, VGS = 0 V (N-ch) 0.7 V IS = -1.3 A, VGS = 0 V (P-ch) -0.83 V Total Gate Charge Qg 4 Gate-Source Charge Qgs 1.0 Gate-Drain Charge Qgd 1.1 Total Gate Charge Qg 6 Gate-Source Charge Qgs 2.0 Gate-Drain Charge Qgd 0.8 Turn-On Delay Time td(on) 10 Rise Time tr 8 Turn-Off Delay Time td(off) 27 Fall Time tf 6 Turn-On Delay Time td(on) 10 Rise Time tr 9 Turn-Off Delay Time td(off) 24 Fall Time tf 28 Input Capacitance Ciss 471 Output Capacitance Coss 51 Reverse Transfer Capacitance Crss 39 Input Capacitance Ciss 449 Output Capacitance Coss 39 Reverse Transfer Capacitance Crss 34 VGS(th) uA P - Channel VDS = -15 V, VGS = 0 V, f = 1 MHz pF nC ID(on) IDSS rDS(on) mΩ mΩ P - Channel VDD = -10 V, RL = 2.8 Ω, ID = -3.6 A, VGEN = -4.5 V, RGEN = 6 Ω ns VSD Dynamic N - Channel VDS = 10 V, VGS = 4.5 V, ID = 3.6 A Forward Transconductance gfs Diode Forward Voltage P - Channel VDS = -10 V, VGS = 4.5 V, ID = -3.6 A nC N - Channel VDD = 10 V, RL = 2.8 Ω, ID = 3.6 A, VGEN = 4.5 V, RGEN = 6 Ω ns N - Channel VDS = 15 V, VGS = 0 V, f = 1 MHz pF Zero Gate Voltage Drain Current Drain-Source On-Resistance Static

Electrical Characteristics

Gate-Source Threshold Voltage On-State Drain Current © Preliminary 2 Publication Order Number: DS_AMA520C_1B

  1. On-Resistance vs. Drain Current 2. Transfer Characteristics 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 5. Output Characteristics 6. Capacitance Typical Electrical Characteristics - N-channel 0.02 0.04 0.06 0.08 0.1 0.12 0 2 4 6 8 10 RDS(on) - On-Resistance(Ω) ID-Drain Current (A) 3.5V 2.5V 3.5V,4V,4.5V,6V 0 0.2 0.4 0.6 0.8 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 6V,4.5V,4V,3.5V 2.5V 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 0.2 0 2 4 6 8 10 RDS(on) - On-Resistance(Ω) VGS - Gate-to-Source Voltage (V) TJ = 25°C ID = 3.6A 0 1 2 3 4 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) TJ = 25°C 0.01 0.1 IS - Source Current (A) VSD - Source-to-Drain Voltage (V) TJ = 25°C 100 200 300 400 500 600 700 0 5 10 15 20 Capacitance (pf) VDS-Drain-to-Source Voltage (V) Ciss Coss Crss F = 1MHz © Preliminary 3 Publication Order Number: DS_AMA520C_1B
  1. Gate Charge 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 8. Normalized On-Resistance Vs Junction Temperature 11. Normalized Thermal Transient Junction to Ambient Typical Electrical Characteristics - N-channel 0 2 4 6 8 VGS-Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) ID = 3.6A VDS = 10V 0.01 0.1 100 0.1 1 10 100 ID Current (A) VDS Drain to Source Voltage (V) 10 uS 100 uS 1 mS 10 mS 100 mS

1 SEC

10 SEC

100 SEC

0.001 0.01 0.1 1 10 100 1000 PEAK TRANSIENT POWER (W) t1 TIME (SEC) 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) RθJA(t) = r(t) + RθJA RθJA = 85°C /W TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.2 0.1 0.05 0.02 P(pk) D = 0.5 Single Pulse 0.5 1.5 -50 -25 0 25 50 75 100 125 150 RDS(on) - On-Resistance(Ω) (Normalized) TJ -JunctionTemperature(°C) © Preliminary 4 Publication Order Number: DS_AMA520C_1B

  1. On-Resistance vs. Drain Current 2. Transfer Characteristics 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 5. Output Characteristics 6. Capacitance Typical Electrical Characteristics - P-channel 0.05 0.1 0.15 0.2 0.25 0 2 4 6 8 10 RDS(on) - On-Resistance(Ω) ID-Drain Current (A) 3.5V 3V 4.5V, 6V 2.5V 0 0.4 0.8 1.2 1.6 2 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 6V,4.5V,4V 2.5V 3.5V 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0 2 4 6 8 10 RDS(on) - On-Resistance(Ω) VGS - Gate-to-Source Voltage (V) TJ = 25°C ID = -3.6A 0 1 2 3 4 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) TJ = 25°C 0.01 0.1 IS - Source Current (A) VSD - Source-to-Drain Voltage (V) TJ = 25°C 100 200 300 400 500 600 700 0 5 10 15 20 Capacitance (pf) VDS-Drain-to-Source Voltage (V) Ciss Coss Crss F = 1MHz © Preliminary 5 Publication Order Number: DS_AMA520C_1B
  1. Gate Charge 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation Typical Electrical Characteristics - P-channel 8. Normalized On-Resistance Vs Junction Temperature 11. Normalized Thermal Transient Junction to Ambient 0 2 4 6 8 10 12 VGS-Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) ID = -3.6A VDS = -10V 0.01 0.1 100 0.1 1 10 100 ID Current (A) VDS Drain to Source Voltage (V) 10 uS 100 uS 1 mS 10 mS 100 mS

0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) RθJA(t) = r(t) + RθJA RθJA = 85°C /W TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.2 0.1 0.05 0.02 P(pk) D = 0.5 Single Pulse 0.001 0.01 0.1 1 10 100 1000 PEAK TRANSIENT POWER (W) t1 TIME (SEC) 0.5 1.5 -50 -25 0 25 50 75 100 125 150 RDS(on) - On-Resistance(Ω) (Normalized) TJ -JunctionTemperature(°C) © Preliminary 6 Publication Order Number: DS_AMA520C_1B

Package Information

© Preliminary 7 Publication Order Number: DS_AMA520C_1B