AM90N08-08P ANALOGPOWER | Alldatasheet
Document overview
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Technical content
N-Channel 80-V (D-S) MOSFET VDS (V) ID(A) Symbol Limit Units VDS 80 VGS ±20 Continuous Drain Current a TA=25°C ID 90a IDM 350 IS 120 Power Dissipation a TA=25°C PD 300 W TJ, Tstg -55 to 175 °C Symbol Maximum Units 62.5 0.5 Notes a. Package Limited b. Pulse width limited by maximum junction temperature Gate-Source Voltage Maximum Junction-to-Ambient a t <= 10 sec Steady State Pulsed Drain Current b Operating Junction and Storage Temperature Range RθJA A PRODUCT SUMMARY rDS(on) (mΩ) 11 @ VGS = 10V 13 @ VGS = 4.5V 90a Continuous Source Current (Diode Conduction) a THERMAL RESISTANCE RATINGS °C/W Parameter ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) V Parameter Drain-Source Voltage Key Features:
- Low rDS(on) trench technology
- Low thermal impedance
- Fast switching speed Typical Applications:
- White LED boost converters
- Automotive Systems
- Industrial DC/DC Conversion Circuits c Preliminary 1 Publication Order Number: DS_AM90N08-08P_1A
Parameter Symbol Test Conditions Min Typ Max Unit Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 uA 1 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ±20 V ±100 nA VDS = 64 V, VGS = 0 V 1 VDS = 64 V, VGS = 0 V, TJ = 55°C 25 On-State Drain Current ID(on) VDS = 5 V, VGS = 10 V 45 A VGS = 10 V, ID = 45 A 11 VGS = 4.5 V, ID = 44 A 13 Forward Transconductance gfs VDS = 15 V, ID = 45 A 40 S Diode Forward Voltage VSD IS = 60 A, VGS = 0 V 0.9 V Total Gate Charge Qg 58 Gate-Source Charge Qgs 14 Gate-Drain Charge Qgd 39 Turn-On Delay Time td(on) 19 Rise Time tr 45 Turn-Off Delay Time td(off) 178 Fall Time tf 62 Input Capacitance Ciss 4021 Output Capacitance Coss 449 Reverse Transfer Capacitance Crss 440 Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. VDS = 40 V, RL = 2 Ω, ID = 20 A, VGEN = 10 V, RGEN = 6 Ω VDS = 40 V, VGS = 4.5 V, ID = 20 A Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. pFVDS = 15 V, VGS = 0 V, f = 1 MHz Zero Gate Voltage Drain Current Static uA
Electrical Characteristics
Drain-Source On-Resistance ns mΩrDS(on) nC c Preliminary 2 Publication Order Number: DS_AM90N08-08P_1A
- On-Resistance vs. Drain Current 2. Transfer Characteristics 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 5. Output Characteristics 6. Capacitance Typical Electrical Characteristics 0.005 0.01 0.015 0.02 0.025 0.03 0 20 40 60 80 100 RDS(on) - On-Resistance(Ω) ID-Drain Current (A) 4.5v 6V,8V,10V 100 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 10V,8V,6V 4.5V 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1 0 2 4 6 8 10 RDS(on) - On-Resistance(Ω) VGS - Gate-to-Source Voltage (V) TJ = 25°C ID = 20A 100 0 1 2 3 4 5 6 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) TJ = 25°C 0.01 0.1 100 IS - Source Current (A) VSD - Source-to-Drain Voltage (V) TJ = 25°C 1000 2000 3000 4000 5000 6000 7000 0 5 10 15 20 Capacitance (pf) VDS-Drain-to-Source Voltage (V) Ciss Coss Crss F = 1MHz c Preliminary 3 Publication Order Number: DS_AM90N08-08P_1A
- Gate Charge 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation Typical Electrical Characteristics 8. Normalized On-Resistance Vs Junction Temperature 11. Normalized Thermal Transient Junction to Ambient 0 50 100 150 VGS-Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) ID = 20A VDS = 40V 0.01 0.1 100 1000 0.1 1 10 100 1000 ID Current (A) VDS Drain to Source Voltage (V) 10 uS 100 uS 1 mS 10 mS 100 mS
1 SEC
10 SEC
100 SEC
0.001 0.01 0.1 1 10 100 1000 PEAK TRANSIENT POWER (W) t1 TIME (SEC) 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) RθJA(t) = r(t) + RθJA RθJA = 62.5 °C /W TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 D = 0.5 0.2 0.1 0.05 0.02 Single Pulse P(pk) 0.5 1.5 2.5 -50 -25 0 25 50 75 100 125 150 RDS(on) - On-Resistance(Ω) (Normalized) TJ -JunctionTemperature(°C) c Preliminary 4 Publication Order Number: DS_AM90N08-08P_1A
Package Information
c Preliminary 5 Publication Order Number: DS_AM90N08-08P_1A