AM90N06-15P ANALOGPOWER | Alldatasheet
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Publication Order Number: DS-AM90N06-15_D These miniature surface mount MOSFETs utilize a high cell density trench process to provide low r DS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. VDS (V) r DS(on) m(Ω)I D (A) 10.5 @ VGS = 10V 13 @ VGS = 4.5V PRODUCT SUMMARY 60 90a N-Channel 60-V (D-S) MOSFET
- L o w r DS(on) provides higher efficiency and extends battery life
- Low thermal impedance copper leadframe TO-220 saves board space
- Fast switching speed
- High performance trench technology Notes a. Package Limited b. Pulse width limited by maximum junction temperature Symbol Limit Units VDS 60 VGS ±20 Continuous Drain Current a TC=25 o C ID 90 IDM 240 IS 90 A Power Dissipation a TC=25 o C PD 300 W TJ, Tstg -55 to 175 o COperating Junction and Storage Tem perature Range Continuous Source Current (Diode Conduction) a ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Parameter Pulsed Drain Current b V G ate-Source Voltage Drain-Source Voltage A Parameter Symbol Maximum Units Maximum Junction-to-Ambient a RθJA 62.5 o C/W Maximum Junction-to-Case R θJC 0.5 o C/W THERMAL RESISTANCE RATINGS N-Channel MOSFET
Publication Order Number: DS-AM90N06-15_D Notes a. Pulse test: PW <= 3 00us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. Min Typ Max Gate-Threshold Voltage V GS(th) VDS = VGS, ID = 250 uA 1 V Gate-Body Leakage I GSS VDS = 0 V, VGS = 20 V ±100 nA VDS = 48 V, VGS = 0 V 1 VDS = 48 V, VGS = 0 V, TJ = 55oC 25 On-State Drain Current A ID(on) VDS = 5 V, VGS = 10 V 120 A VGS = 10 V, ID = 30 A 10.5 VGS = 4.5 V, ID = 20 A 13 Forward TranconductanceA gfs VDS = 15 V, ID = 30 A 30 S Diode Forward Voltage V SD IS = 34 A, VGS = 0 V 1.1 V Total Gate Charge Q g 49 100 Gate-Source Charge Q gs 9.0 Gate-Drain Charge Q gd 10 Input Capacitance C iss 1850 Output Capacitance C oss 290 Reverse Transfer Capacitance C rss 100 Turn-On Delay Time t d(on) 16 Rise Time t r 10 Turn-Off Delay Time t d(off) 50 Fall-Time t f 23 Drain-Source On-ResistanceA rDS(on) mΩ Parameter Limits Unit VDD = 25 V, RL = 25 Ω , ID = 34 A, VGEN = 10 V VDS = 15 V, VGS = 0 V, f = 1MHz pF nS VDS = 15 V, VGS = 4.5 V, ID = 90 A nC Dynamicb SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED) uAIDSSZero Gate Voltage Drain Current Static Test ConditionsSymbol
Publication Order Number: DS-AM90N06-15_D Typical Electrical Characteristics Output Characteristics Transfer Characteristics On-Resistance vs. Junction TemperatureGate Charge CapacitanceOn-Resistance vs. Drain Current 012345 V DS - Drain-to-Source Voltage (V) ID - Drain Current (A) VGS = 10V 4.5V 23456 V GS - Gate-to-Source Voltage (V) ID - Drain Current (A) TA =-55oC 25oC 125oC 0.2 0.6 1.4 1.8 2.2 2.6 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (oC) rDS(ON), - On-Resistance (Normalized) VGS = 10V 0.8 1.2 1.4 1.6 1.8 0 1 02 03 04 05 06 0 ID - D rain Current (A ) rDS(ON) - Normalized On-Resis 10V 4.5V 500 1000 1500 2000 2500 3000 3500 4000 0 1 02 03 04 05 06 0 V DS - Drain-to-Source Voltage (V) C - Capacitance CISS CRSS COSS 0 1 02 03 04 05 06 0 Qg - G ate Charge (nC) VGS Vol tage ( V
Publication Order Number: DS-AM90N06-15_D Typical Electrical Characteristics (N-Channel) Normalized Thermal Transient Impedance, Junction-to-Ambient Single Pulse PowerThreshold Voltage Source-Drain Diode Forward Voltage On -Resistance vs.Gate-to Source Voltage 0.0001 0.001 0.01 0.1 100 VSD - Source-to-Drain Voltage (V) IS - Source CURRENT (A TA = 125oC 25oC 0.02 0.04 0.06 0.08 0.1 0.12 2468 1 0 VGS - Gate-to-Source Voltage (V) rDS(ON) - On-Resistance (OHM) 1.4 1.8 2.2 2.6 -50 -25 0 25 50 75 100 125 150 175 TJ - Temperature (oC) VGS(th), Variance (V) ID = 250µA 0.001 0.01 0.1 1 1 0 1 00 1 000 Tim e (sec) 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse D uration (sec) Normalized Effective Transient Thermal Impedance RθJA(t) = r(t) + RθJA RθJA = 125oC/W TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 P(pk) SINGLE PULSE 0.01 0.02 0.05 0.1 0.2 D = 0.5
Publication Order Number: DS-AM90N06-15_D