AM7924N ANALOGPOWER | Alldatasheet

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Technical content

Dual N-Channel 20-V (D-S) MOSFET VDS (V) ID (A) 50c 50c Symbol Limit Units VDS 20 VGS ±12 TA=25°C 16a TA=70°C 13a TC=25°C 50c TC=70°C 50c IDM 80 IS 4.3 TA=25°C 2.5a TA=70°C 1.6a TC=25°C 36 TC=70°C 23 TJ, Tstg -55 to 150 °C Symbol Maximum Units Maximum Junction-to-Case RθJC 3.5 Notes a. Surface Mounted on 1” x 1” FR4 Board b. Pulse width limited by maximum junction temperature c. Package limited Pulsed Drain Current b Continuous Source Current (Diode Conduction) a THERMAL RESISTANCE RATINGS Parameter Operating Junction and Storage Temperature Range ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) V Parameter Drain-Source Voltage Maximum Junction-to-Ambient a Gate-Source Voltage PRODUCT SUMMARY rDS(on) (mΩ) 7 @ VGS = 4.5V 9 @ VGS = 2.5V A Continuous Drain Current t <= 10 sec Steady State RθJA ID ID Steady State °C/W WPDPower Dissipation Key Features:

  • Low rDS(on) trench technology
  • Low thermal impedance
  • Fast switching speed Typical Applications:
  • Power Routing
  • Li Ion Battery Packs
  • Level Shifting and Driver Circuits DFN5X6-8L © Preliminary 1 Publication Order Number: DS_AM7924N_1B

Parameter Symbol Test Conditions Min Typ Max Unit Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 uA 0.4 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ±12 V ±100 nA VDS = 16 V, VGS = 0 V 1 VDS = 16 V, VGS = 0 V, TJ = 55°C 10 On-State Drain Current a ID(on) VDS = 5 V, VGS = 4.5 V 30 A VGS = 4.5 V, ID = 17.7 A 7 VGS = 2.5 V, ID = 14.2 A 9 Forward Transconductance a gfs VDS = 15 V, ID = 17.7 A 12 S Diode Forward Voltage a VSD IS = 2.2 A, VGS = 0 V 0.68 V Total Gate Charge Qg 73 Gate-Source Charge Qgs 7.8 Gate-Drain Charge Qgd 17 Turn-On Delay Time td(on) 16 Rise Time tr 36 Turn-Off Delay Time td(off) 169 Fall Time tf 36 Input Capacitance Ciss 8742 Output Capacitance Coss 511 Reverse Transfer Capacitance Crss 498 Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Dynamic b ns Static uA

Electrical Characteristics

mΩrDS(on) nC VDS = 10 V, RL = 0.6 Ω, ID = 17.7 A, VGEN = 4.5 V, RGEN = 1 Ω VDS = 10 V, VGS = 4.5 V, ID = 17.7 A Drain-Source On-Resistance a Zero Gate Voltage Drain Current Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. pFVDS = 15 V, VGS = 0 V, f = 1 Mhz © Preliminary 2 Publication Order Number: DS_AM7924N_1B

  1. On-Resistance vs. Drain Current 2. Transfer Characteristics 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 5. Output Characteristics 6. Capacitance Typical Electrical Characteristics 0.005 0.01 0.015 0.02 0 10 20 30 RDS(on) - On-Resistance(Ω) ID-Drain Current (A) 1.8V 2V,2.5V,3V,3.5V,4V,4.5V,6V 1.5V 0 0.1 0.2 0.3 0.4 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 6V,4.5V,4V,3.5V, 3V,2.5V,2V 1.8V 1.5V 0.005 0.01 0.015 0.02 0.025 0.03 0.035 0.04 0 2 4 6 RDS(on) - On-Resistance(Ω) VGS - Gate-to-Source Voltage (V) TJ = 25°C TJ = 25°C 0 1 2 3 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) TJ = 25°C 0.01 0.1 100 IS - Source Current (A) VSD - Source-to-Drain Voltage (V) TJ = 25°C 2000 4000 6000 8000 10000 12000 14000 16000 18000 20000 0 5 10 15 20 Capacitance (pf) VDS-Drain-to-Source Voltage (V) Ciss Coss Crss F = 1MHz ID = 17.7A © Preliminary 3 Publication Order Number: DS_AM7924N_1B
  1. Gate Charge 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 8. Normalized On-Resistance Vs Junction Temperature 11. Normalized Thermal Transient Junction to Ambient Typical Electrical Characteristics 0 50 100 150 VGS-Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) 0.01 0.1 100 1000 0.1 1 10 100 1000 ID Current (A) VDS Drain to Source Voltage (V) 10 uS 100 uS 1 mS 10 mS 100 mS

1 SEC

10 SEC

100 SEC

0.001 0.01 0.1 1 10 100 1000 PEAK TRANSIENT POWER (W) t1 TIME (SEC) 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) D = 0.5 0.2 0.1 0.05 0.02 Single Pulse RθJA(t) = r(t) + RθJA TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.5 1.5 -50 -25 0 25 50 75 100 125 150 RDS(on) - On-Resistance(Ω) (Normalized) TJ -JunctionTemperature(°C) P(pk) RθJA = 70 °C /W VDS = 10V ID = 17.7A © Preliminary 4 Publication Order Number: DS_AM7924N_1B

Package Information

© Preliminary 5 Publication Order Number: DS_AM7924N_1B