AM7500C ANALOGPOWER | Alldatasheet

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P & N-Channel 150-V (D-S) VDS (V) ID(A) 2.6 2.4 -1.8 -1.7 Symbol Nch Limit Pch Limit Units VDS 150 -150 VGS ±20 ±20 TA=25°C 2.6 -1.8 TA=70°C 2 -1.5 IDM 10 -10 IS 3 -3 A TA=25°C 2.5 2.5 TA=70°C 1.6 1.6 TJ, Tstg °C Symbol Maximum Units 62.5 110 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature -55 to 150 V Steady State RθJA A W °C/W Parameter THERMAL RESISTANCE RATINGS Continuous Drain Current a ID Power Dissipation a PD Parameter Drain-Source Voltage Gate-Source Voltage ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) t <= 10 sec Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Operating Junction and Storage Temperature Range 255 @ VGS = 10V 290 @ VGS = 4.5V -150 Maximum Junction-to-Ambient a 500 @ VGS = -10V 530 @ VGS = -4.5V PRODUCT SUMMARY rDS(on) (mΩ) 150 DFN5x6-8L Key Features:

  • Low rDS(on) trench technology
  • Low thermal impedance
  • Fast switching speed Typical Applications:
  • White LED boost converters
  • Automotive Systems
  • Industrial DC/DC Conversion Circuits © Preliminary 1 Publication Order Number: DS_AM7500C_1A

Parameter Symbol Test Conditions Min Typ Max Unit VDS = VGS, ID = 250 uA (N-ch) 1 V VDS = VGS, ID = -250 uA (P-ch) -1 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ±20 V ±100 nA VDS = 120 V, VGS = 0 V (N-ch) 1 VDS = -120 V, VGS = 0 V (P-ch) -1 VDS = 5 V, VGS = 10 V (N-ch) 1.3 A VDS = -5 V, VGS = -10 V (P-ch) -0.9 A VGS = 10 V, ID = 2.1 A (N-ch) 255 VGS = 4.5 V, ID = 2.0 A (N-ch) 290 VGS = -10 V, ID = -1.4 A (P-ch) 500 VGS = -4.5 V, ID = -1.3 A (P-ch) 530 VDS = 15 V, ID = 2.1 A (N-ch) 11 S VDS = -15 V, ID = -1.4 A (P-ch) 11 S IS = 1.5 A, VGS = 0 V (N-ch) 0.77 V IS = -1.5 A, VGS = 0 V (P-ch) 0.77 V Total Gate Charge Qg 10 Gate-Source Charge Qgs 4.0 Gate-Drain Charge Qgd 4.7 Total Gate Charge Qg 6 Gate-Source Charge Qgs 2.0 Gate-Drain Charge Qgd 2.9 Turn-On Delay Time td(on) 7 Rise Time tr 7 Turn-Off Delay Time td(off) 47 Fall Time tf 20 Turn-On Delay Time td(on) 8 Rise Time tr 7 Turn-Off Delay Time td(off) 96 Fall Time tf 79 Input Capacitance Ciss 1016 Output Capacitance Coss 83 Reverse Transfer Capacitance Crss 40 Input Capacitance Ciss 1008 Output Capacitance Coss 100 Reverse Transfer Capacitance Crss 61 VGS(th) uA P - Channel VDS = -15 V, VGS = 0 V, f = 1 MHz pF nC ID(on) IDSS rDS(on) mΩ mΩ P - Channel VDD = -75 V, RL = 53.6 Ω, ID = -1.4 A, VGEN = -10 V, RGEN = 6 Ω ns VSD Dynamic N - Channel VDS = 75 V, VGS = 4.5 V, ID = 2.1 A Forward Transconductance gfs Diode Forward Voltage P - Channel VDS = -75 V, VGS = -4.5 V, ID = -1.4 A nC N - Channel VDD = 75 V, RL = 35.7 Ω, ID = 2.1 A, VGEN = 10 V, RGEN = 6 Ω ns N - Channel VDS = 15 V, VGS = 0 V, f = 1 MHz pF Zero Gate Voltage Drain Current Drain-Source On-Resistance Static

Electrical Characteristics

Gate-Source Threshold Voltage On-State Drain Current © Preliminary 2 Publication Order Number: DS_AM7500C_1A

  1. On-Resistance vs. Drain Current 2. Transfer Characteristics 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 5. Output Characteristics 6. Capacitance Typical Electrical Characteristics - N-channel 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0 1 2 3 4 5 RDS(on) - On-Resistance(Ω) ID-Drain Current (A) 3.5V 4V,4.5V,6V,8V,10V 0.5 1.5 2.5 3.5 4.5 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 10V,8V,6V,4.5V,4V 3.5V 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 2 4 6 8 10 RDS(on) - On-Resistance(Ω) VGS - Gate-to-Source Voltage (V) TJ = 25°C ID = 2.1A 0 0.5 1 1.5 2 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) TJ = 25°C 0.01 0.1 IS - Source Current (A) VSD - Source-to-Drain Voltage (V) TJ = 25°C 200 400 600 800 1000 1200 1400 0 5 10 15 20 Capacitance (pf) VDS-Drain-to-Source Voltage (V) Ciss Coss Crss F = 1MHz © Preliminary 3 Publication Order Number: DS_AM7500C_1A
  1. Gate Charge 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 8. Normalized On-Resistance Vs Junction Temperature 11. Normalized Thermal Transient Junction to Ambient Typical Electrical Characteristics - N-channel 0 5 10 15 20 VGS-Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) ID = 2.1A VDS = 75V 0.01 0.1 100 0.1 1 10 100 1000 ID Current (A) VDS Drain to Source Voltage (V) 10 uS 100 uS 1 mS 10 mS 100 mS

1 SEC

10 SEC

100 SEC

0.001 0.01 0.1 1 10 100 1000 PEAK TRANSIENT POWER (W) t1 TIME (SEC) 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) RθJA(t) = r(t) + RθJA RθJA = 110°C /W TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.2 0.1 0.05

0.02 P(pk)

D = 0.5 Single Pulse 0.5 1.5 2.5 -50 -25 0 25 50 75 100 125 150 RDS(on) - On-Resistance(Ω) (Normalized) TJ -JunctionTemperature(°C) © Preliminary 4 Publication Order Number: DS_AM7500C_1A

  1. On-Resistance vs. Drain Current 2. Transfer Characteristics 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 5. Output Characteristics 6. Capacitance Typical Electrical Characteristics - P-channel 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 1 2 3 4 5 RDS(on) - On-Resistance(Ω) ID-Drain Current (A) 3.5V 4.5V, 6V,8V,10V 0.5 1.5 2.5 3.5 4.5 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 10V,8V,6V,4.5V,4V 3.5V 0.2 0.4 0.6 0.8 1.2 1.4 1.6 0 2 4 6 8 10 RDS(on) - On-Resistance(Ω) VGS - Gate-to-Source Voltage (V) TJ = 25°C ID = -1.4A 0 1 2 3 4 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) TJ = 25°C 0.01 0.1 IS - Source Current (A) VSD - Source-to-Drain Voltage (V) TJ = 25°C 200 400 600 800 1000 1200 0 5 10 15 20 Capacitance (pf) VDS-Drain-to-Source Voltage (V) Ciss Coss Crss F = 1MHz © Preliminary 5 Publication Order Number: DS_AM7500C_1A
  1. Gate Charge 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation Typical Electrical Characteristics - P-channel 8. Normalized On-Resistance Vs Junction Temperature 11. Normalized Thermal Transient Junction to Ambient 0 5 10 15 VGS-Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) ID = -1.4A VDS = -75V 0.01 0.1 100 0.1 1 10 100 1000 ID Current (A) VDS Drain to Source Voltage (V) 10 uS 100 uS 1 mS 10 mS 100 mS

0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) RθJA(t) = r(t) + RθJA RθJA = 110°C /W TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.2 0.1 0.05 D = 0.5 Single Pulse 100 120 140 160 180 200 0.001 0.01 0.1 1 10 100 1000 PEAK TRANSIENT POWER (W) t1 TIME (SEC) 0.5 1.5 2.5 -50 -25 0 25 50 75 100 125 150 RDS(on) - On-Resistance(Ω) (Normalized) TJ -JunctionTemperature(°C) © Preliminary 6 Publication Order Number: DS_AM7500C_1A

Package Information

© Preliminary 7 Publication Order Number: DS_AM7500C_1A