AM6968N ANALOGPOWER | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 5
Technical content
Publication Order Number: DS-AM6968_K These miniature surface mount MOSFETs utilize a high cell density trench process to provide low r DS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Dual N-Channel Logical Level MOSFET
- L o w r DS(on) provides higher efficiency and extends battery life
- Low thermal impedance copper leadframe TSSOP-8 saves board space
- Fast switching speed
- High performance trench technology Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Symbol Maximum Units VDS 20 VGS ±12 TA=25 o C6 . 8 TA=70 o C5 . 4 IDM ±30 IS 1.5 A TA=25 o C1 . 5 TA=70 o C1 . 0 TJ, Tstg -55 to 150 o C Continuous Source Current (Diode Conduction) a ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Parameter Pulsed Drain Current b V Gate-Source Voltage Drain-Source Voltage Continuous Drain Current a ID A Power Dissipation a PD Operating Junction and Storage Temperature Range W Symbol Typ Max t <= 10 sec 72 83 Steady State 100 120 THERMAL RESISTANCE RATINGS Maximum Junction-to-Ambient a o C/WRthJA Parameter TSSOP-8 Top View N-Channel MOSFET N-Channel MOSFET4G1 5 G2 VDS (V) r DS(on) (OHM) I D (A) 0.022 @ VGS = 4.5 V 6.8 0.030 @ VGS = 2.5V 5.8 0.047 @ VGS = 1.8V 4.7 PRODUCT SUMMARY
Publication Order Number: DS-AM6968_K Notes a. Pulse test: PW <= 3 00us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing . Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. Min Typ Max Gate-Threshold Voltage V GS(th) VGS = VDS, ID = 250 uA 0.7 V Gate-Body Leakage I GSS VDS = 0 V, VGS = ± 12 V ±100 nA VDS = 16 V, VGS = 0 V 1 uA VDS = 16 V, VGS = 0 V, T J = 55oC 10 uA On-State Drain CurrentA ID(on) VDS = 5 V, VGS = 4.5 V 30 A VGS = 4.5 V, I D = 6.8 A 0.022 VGS = 2.5 V, I D = 5.8 A 0.030 VGS = 1.8 V, I D = 4.7 A 0.047 Forward TranconductanceA gfs VDS = 10 V, I D = 6.8 A 25 S Diode Forward VoltageA VSD IS = 6.8 A, V GS = 0 V 0.89 V Total G ate Charge Q g 13.4 Gate-Source Charge Q gs 0.9 Ga t e -Dra in Ch a rg e Q gd 2.0 Turn-On Delay Time t d(on) 18 Ris e Time t r 25 Turn-Off Delay Time t d(of f ) 50 Fall-Time t f 25 Unit SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED) Static Test ConditionsSymbolParameter Zero Gate Voltage Drain Current I DSS Ω nS VDD =10V , VGS=4.5V, ID=1A , RGEN =10Ω Drain-Source On-ResistanceA rDS(on) nC Dynamicb VDS=10V, VGS=4.5V, ID=6.8A
Publication Order Number: DS-AM6968_K Typical Electrical Characteristics (N-Channel) Output Characteristics Transfer Characteristics On-Resistance vs. Junction TemperatureGate Charge CapacitanceOn-Resistance vs. Drain Current 00 . 511 . 522 . 53 VDS, DRAIN-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) 3.5V 2.5V 2.0V VGS = 10.0V 4.5V 3.0V 0 . 511 . 522 . 533 . 5 V GS, GATE TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) TA = -55oC 25oC 125oCVDS = 5V 0.8 1.2 1.4 1.6 1.8 2.2 2.4 0 5 10 15 20 25 30 ID, DRAIN CURRENT (A) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 2.0V 3.5V 3.0V 4.5V 2.5V 10.0V 4.0V 300 600 900 048 1 2 1 6 2 0 VDS, DRAIN TO SOURCE VOLTAGE (V) CAPACITANCE (pF) Ciss Crss Coss f = 1MHz VGS = 0 V 012345678 Q g, GATE CHARGE (nC) VGS, GATE-SOURCE VOLTAGE (V) ID = 4.5A VDS = 5V 15V 10V 0.6 0.8 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 4.5A VGS = 10V
Publication Order Number: DS-AM6968_K 1.2 1.4 1.6 1.8 2.2 -50 -25 0 25 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (oC) -Vth, GATE-SOURCE THRESTHOLD VOLTAGE (V) VDS = VGS ID = -250mA Typical Electrical Characteristics (N-Channel) Normalized Thermal Transient Junction to Ambient Single Pulse Power, Junction-to-AmbientVth Gate to Source Voltage Vs Temperature Source-Drain Diode Forward Voltage On-R esistance vs. Gate-to-Source Voltage 0.0001 0.001 0.01 0.1 100 VSD, BODY DIODE FORWARD VOLTAGE (V) IS, REVERSE DRAIN CURRENT (A) TA = 125oC 25oC -55oC VGS = 0V 0.01 0.03 0.05 0.07 0.09 02468 1 0 V GS, GATE TO SOURCE VOLTAGE (V) RDS(ON), ON-RESISTANCE (OHM) ID = 2.25A TA = 125oC TA = 25oC 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) P(pk), PEAK TRANSIENT POWER (W) SINGLE PULSE RθJA = 208°C/W TA = 25°C 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE RθJA(t) = r(t) * RθJA RθJA =208 °C/W TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 P(pk) SINGLE PULSE 0.01 0.02 0.05 0.1 0.2 D = 0.5
Publication Order Number: DS-AM6968_K
Package Information
TSSOP-8: 8LEAD