AM6544C ANALOGPOWER | Alldatasheet

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Technical content

Publication Order Number: DS-AM6544_A These miniature surface mount MOSFETs utilize a high cell density trench process to provide low r DS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. P & N-Channel 20-V (D-S) MOSFET

  • L o w r DS(on) provides higher efficiency and extends battery life
  • Low thermal impedance copper leadframe TSSOP-8 saves board space
  • Fast switching speed
  • High performance trench technology Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature TSSOP-8 Top View N-Channel MOSFET4G1 5 G2 P-Channel MOSFET VDS (V) r DS(on) m(Ω)I D (A) 32 @ VGS = 10V 4.3 46 @ VGS = 4.5V 3.7 52 @ VGS = -10V -3.8 PRODUCT SUMMARY -30 Symbol N-Channel P-Channel Units VDS 30 -30 VGS ±20 ±20 TA=25oC 4.3 -3.8 TA=70oC 3.5 -3.0 IDM 20 -20 IS 1.0 -1.0 A TA=25oC 1.14 1.14 TA=70oC0 . 7 3 0 . 7 3 TJ, Tstg -55 to 150 -55 to 150 oC Continuous Source Current (Diode Conduction)a ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Parameter Pulsed Drain Currentb VGate-Source Voltage Drain-Source Voltage Continuous Drain Currenta ID A Power Dissipationa PD Operating Junction and Storage Temperature Range W Symbol Typ Max t <= 10 sec 88 110 Steady State 120 150 THERMAL RESISTANCE RATINGS Maximum Junction-to-Ambienta oC/WRthJA Parameter

Publication Order Number: DS-AM6544_A Notes a. Pulse test: PW <= 3 00us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. Ch Min T ypM a x VGS = VDS, ID = 250 uA N 1.0 VGS = VDS, ID = -250 uA P -1.0 VGS = 20 V, VDS = 0 V N± 1 0 0 VGS = -20 V, VDS = 0 V P± 1 0 0 VDS = 16 V, VGS = 0 V N1 VDS = -16 V, VGS = 0 V P- 1 VDS = 5 V, VGS = 10 V N2 0 VDS = -5 V, VGS = -10 V P- 2 0 V G S = 10 V , ID = 4.3 A 32 V G S = 4.5 V , ID = 3.7 A 46 V G S = -10 V , ID = -3.8 A 52 VGS = - 4 .5 V, ID = -2.8 A 80 VDS = 15 V, ID = 4.3 A N 11 VDS = -15 V, I D = -3.8 A P 11 N4 . 7 P8 . 0 N1 . 8 P2 . 3 N1 . 5 P4 . 5 N1 3 P1 4 N1 4 P1 4 N3 0 P4 0 N3 0 P3 0 Forward TranconductanceA gfs S nC Ga t e-Dra in Ch a rg e Q gd Dynamic Limits Unit SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED) nA Static Test Conditions V SymbolParameter Gate-Threshold Voltage On-State Drain CurrentA ID(on) VGS(th) A Gate-Body Leakage I GSS uAIDSSZero Gate Voltage Drain Current mΩ Total Gate Charge Q g Gate-Source Charge Q gs N-Channel VDS=15V , VGS=4.5V, ID=4.3A P-Channel VDS=-15V, VGS=-4.5V , ID=-3.8A Drain-Source On-ResistanceA rDS(on) N P Turn-On Delay Tim e Ris e Time nS N-Chaneel VDD =15V, VGS=4.5V, ID=1A , RGEN =6Ω, P-Channel VDD=-15V, VGS=-4.5V , ID=-1A RGEN=6Ω Fall-Time t f Turn-Off Delay Time td(on) tr td(of f )

Publication Order Number: DS-AM6544_A

Package Information

TSSOP-8: 8LEAD