AM6411P ANALOGPOWER | Alldatasheet

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Publication Order Number: DS-AM6411_D These miniature surface mount MOSFETs utilize a high cell density trench process to provide low r DS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. TSSOP-8 Top View D S S S D G P-Channel MOSFET4G D S S 5 D P-Channel 20-V (D-S) MOSFET

  • L o w r DS(on) provides higher efficiency and extends battery life
  • Low thermal impedance copper leadframe TSSOP-8 saves board space
  • Fast switching speed
  • High performance trench technology Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature VDS (V) r DS(on) m(Ω)I D (A) PRODUCT SUMMARY -20 Symbol Maximum Units VDS -20 VGS ±12 TA=25oC- 9 . 5 TA=70oC- 7 . 7 IDM -30 IS -1.5 A TA=25oC1 . 8 TA=70oC1 . 2 TJ, Tstg -55 to 150 oC Power Dissipationa PD Operating Junction and Storage Temperature Range W Continuous Source Current (Diode Conduction)a ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Parameter Pulsed Drain Currentb VGate-Source Voltage Drain-Source Voltage Continuous Drain Currenta ID A Symbol Maximum Units t <= 10 sec 70 Steady State 115 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta RθJA oC/W

Publication Order Number: DS-AM6411_D Notes a. Pulse test: PW <= 3 00us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typical” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. Min Typ Max G ate-Threshold V oltage V GS(th) VDS = VGS, ID = -250 uA -0.7 G ate-Body Leakage I GSS VDS = 0 V, VGS = ±12 V ±100 nA VDS = -16 V, VGS = 0 V -1 VDS = -16 V, VGS = 0 V, TJ = 55oC -10 On-State Drain Current A ID(on) VDS = -5 V, VGS = -4.5 V -20 A VGS = -4.5 V, ID = -9.5 A 13 VGS = -2.5 V, ID = -7.9 A 19 VGS = -1.8 V, ID = -5.8 A 35 Forward Tranconductance A gfs VDS = -15 V, ID = -9.5 A 45 S Diode Forward V oltage V SD IS = 1.5 A, VGS = 0 V -0.6 V Total G ate Charge Q g 55.0 Gate-Source Charge Q gs 7.2 Gate-Drain Charge Q gd 12.0 Turn-On Delay Time t d(on) 45 Ris e Time t r 75 Turn-Off Delay Time t d (o ff) 240 Fall-Time t f 110 mΩ Parameter Limits Unit VDD = -10 V, RL = 6 Ω , ID = -1 A, VGEN = -4.5 V nS VDS = -10 V, VGS = -4.5 V, ID = -9.5 A nC Dynamicb SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED) uAIDSSZero G ate Voltage Drain Current Static Test ConditionsSymbol Drain-Source On-Resistance A rDS(on)

Publication Order Number: DS-AM6411_D Typical Electrical Characteristics On-Resistance vs. Drain Current Gate Charge Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature Output Characteristics 00 . 511 . 52 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) VGS = -4.5V -2.5V -1.5V 00 . 511 . 52 V GS - Gate-to-Source Voltage (V) ID - Drain Current (A) TA = -55oC 25oC 125oC 0.8 1.2 1.4 1.6 1.8 2.2 0 1 02 03 04 05 0 ID - Drain Current (A) rDS(ON) - Normailized On-Resistance VGS = - 1.5V -4.5V -2.5V 1000 2000 3000 4000 5000 6000 0 5 10 15 20 VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) CISS COSS CRSS 0 8 16 24 32 40 Qg - Total Gate Charge (nC) VGS - Gate-to-Source Voltage ( V ) ID=11.5A 0.6 0.8 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 175 T J - Junction Temperature ( oC) rDS(ON) - On-Resistance (Ohm) (Normalized) VGS = - 4.5V

Publication Order Number: DS-AM6411_D Typical Electrical Characteristics Normalized Thermal Transient Impedance, Junction-to-Ambient On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-AmbientThreshold Voltage Source-Drain Diode Forward Voltage 0. 001 0. 1 1 0 1 000 t1, TIME (sec) 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 1 0 1 00 1 000 t1, TIME (sec) Rq JA (t) = r(t) + Rq JA R q J A = 1 25C / W TJ - TA = P * Rq JA(t) DC l D 1 / 2 P(p t t SINGLE P ULSE 0.01 0.02 0.05 0.1 0.2 D = 0.5 P(pk), PEAK TRANSIENT POW ER (W 0.0001 0.001 0.01 0.1 0 0.2 0.4 0.6 0.8 VSD - Source-to-Drain VOLTAGE (V) IS - Source CURRENT (A) TA = 125oC 25oC 0.005 0.01 0.015 0.02 0.025 0.03 0.035 012345 VGS - Gate-to-Source Voltage (V) rDS(ON), On-Resistance (OHM) -50 -25 0 25 50 75 100 125 150 175 T A - Temperature ( o VGS(th) Variance (V) ID = -250µA

Publication Order Number: DS-AM6411_D

Package Information

TSSOP-8: 8LEAD