AM4N60D ANALOGPOWER | Alldatasheet

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Technical content

N-Channel 600-V (D-S) MOSFET VDS (V) I D (A) 600 4 Symbol Limit Units VDS 600 ABSOLUTE MAXIMUM RATINGS (T A = 25° C UNLESS OTHERWISE NOTED) V Parameter Drain-Source Voltage PRODUCT SUMMARY rDS(on) (Ω) 2 @ V GS = 10V Key Features:

  • Low r DS(on) trench technology
  • Low thermal impedance
  • Fast switching speed Typical Applications:
  • Power Supplies
  • Motor Drives
  • Consumer Electronics © Preliminary 1 Publication Order Number: DS_AM4N60D_1A DS VGS ±20 Continuous Drain Current a TC=25° C I D 4 IDM 16 IS 4 ISM 16 Power Dissipation a TC=25° C P D 50 W TJ, T stg -55 to 175 ° C Symbol Maximum Units RθJA 40 RθJC 3 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Pulsed Diode Forward Current b Continuous Source Current (Diode Conduction) a THERMAL RESISTANCE RATINGS ° C/W Parameter Operating Junction and Storage Temperature Range V Gate-Source Voltage A Maximum Junction-to-Ambient a Maximum Junction-to-Case A Pulsed Drain Current b © Preliminary 1 Publication Order Number: DS_AM4N60D_1A

Parameter Symbol Test Conditions Min Typ Max Unit Gate-Source Threshold Voltage VGS(th) VDS = V GS , I D = 250 uA 1 V Gate-Body Leakage IGSS VDS = 0 V, V GS = ±20 V ±100 nA VDS = 480 V, V GS = 0 V 1 VDS = 480 V, V GS = 0 V, T J = 55° C 10 On-State Drain Current a ID(on) VDS = 5 V, V GS = 10 V 6 A Drain-Source On-Resistance a rDS(on) VGS = 10 V, I D = 2 A 2 Ω Forward Transconductance a gfs VDS = 15 V, I D = 2 A 13 S Diode Forward Voltage a VSD IS = 2 A, V GS = 0 V 0.82 V Total Gate Charge Qg 8 Gate-Source Charge Qgs 4.0 Gate-Drain Charge Qgd 3.9 Turn-On Delay Time td(on) 13 Rise Time tr 4 Turn-Off Delay Time td(off) 23 Fall Time tf 6 Input Capacitance Ciss 924 Output Capacitance Coss 63 Reverse Transfer Capacitance Crss 2 Dynamic b ns Static uA

Electrical Characteristics

VDS = 100 V, R L = 50 Ω, ID = 2 A, VGEN = 10 V, R GEN = 6 Ω VDS = 100 V, V GS = 5.5 V, ID = 2 A Zero Gate Voltage Drain Current pF VDS = 15 V, V GS = 0 V, f = 1 Mhz © Preliminary 2 Publication Order Number: DS_AM4N60D_1A rss Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer applicat ion by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. © Preliminary 2 Publication Order Number: DS_AM4N60D_1A

  1. On-Resistance vs. Drain Current 2. Transfer Characteristics Typical Electrical Characteristics 1.5 2.5 0 0.5 1 1.5 2 RDS(on) - On-Resistance( Ω) ID-Drain Current (A) 3.5V 5.5V,6V,8V,10V 5.3V On -Resistance( Ω) TJ = 25 °CTJ = 25 °C 0.5 1.5 0 2 4 6 8 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) TJ = 25 °C Source Current (A) TJ = 25 °C ID = 2A © Preliminary 3 Publication Order Number: DS_AM4N60D_1A 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain -to-Source Forward Voltage 5. Output Characteristics 6. Capacitance 0.5 1.5 0 2 4 6 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 10V,8V,6V,5.5V 5.3V 0 2 4 6 8 10 RDS(on) - On VGS - Gate-to-Source Voltage (V) 0.01 0.1 IS - Source Current (A) VSD - Source-to-Drain Voltage (V) 200 400 600 800 1000 1200 1400 0 5 10 15 20 Capacitance (pf) VDS-Drain-to-Source Voltage (V) Ciss Coss Crss F= 1MHz © Preliminary 3 Publication Order Number: DS_AM4N60D_1A
  1. Gate Charge 8. Normalized On-Resistance Vs Junction Temperature Typical Electrical Characteristics 0 5 10 15 VGS-Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) ID Current (A) 10 uS 100 uS 1 mS 10 mS 100 mS

1 SEC

PEAK TRANSIENT POWER (W) 0.5 1.5 2.5 -50 -25 0 25 50 75 100 125 150 RDS(on) - On-Resistance( Ω) (Normalized) TJ -JunctionTemperature(° C) VDS = 100V ID = 2A © Preliminary 4 Publication Order Number: DS_AM4N60D_1A 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 11. Normalized Thermal Transient Junction to Ambient 0.01 0.1 0.1 1 10 100 1000 10000 ID Current (A) VDS Drain to Source Voltage (V)

10 SEC

100 SEC

0.001 0.01 0.1 1 10 100 PEAK TRANSIENT POWER (W) t1 TIME (SEC) 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 t1 TIME (sec) D =0.5 0.2 0.1 0.05 0.02 Single Pulse RθJA (t) = r(t) + R θJA TJ -TA = P * R θJA (t) Duty Cycle, D = t 1 / t 2 P(pk) RθJA = 40 °C /W © Preliminary 4 Publication Order Number: DS_AM4N60D_1A

Package Information

© Preliminary 5 Publication Order Number: DS_AM4N60D_1A Note: 1. All Dimension Are In mm. 2. Package Body Sizes Exclude Mold Flash, Protrusion Or Ga te Burrs. Mold Flash, Protrusion Or Gate Burrs Shall Not Exceed 0.10 mm Per Side. 3. Package Body Sizes Determined At The Outermost Extrem es Of The Plastic Body Exclusive Of Mold Flash, Gate Burrs And Interlead Flash, But Including Any Mismatch Between The Top And Bottom Of The Plastic Body. © Preliminary 5 Publication Order Number: DS_AM4N60D_1A