AM4962NE ANALOGPOWER | Alldatasheet
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Technical content
Publication Order Number: DS-AM4962NE_A These miniature surface mount MOSFETs utilize a high cell density trench process to provide low r DS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. VDS (V) r DS(on) m(Ω)I D (A) 35 @ VGS = 10V ±6.4 45 @ VGS = 4.5V ±5.6 PRODUCT SUMMARY N-Channel 60-V (D-S) MOSFET
- L o w r DS(on) provides higher efficiency and extends battery life
- Low thermal impedance copper leadframe SOIC-8 saves board space
- Fast switching speed
- High performance trench technology Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Symbol Limit Units VDS 60 VGS ±20 TA=25 o C± 6 . 4 TA=70 o C± 5 . 2 IDM ±40 IS 2 A TA=25 o C2 . 1 TA=70 o C1 . 3 TJ, Tstg -55 to 150 o C Continuous Source Current (Diode Conduction) a ABSOLUTE MAXIMUM RATINGS (T A = 25 oC UNLESS OTHERWISE NOTED) Parameter Pulsed Drain Current b VGate-Source Voltage Drain-Source Voltage Continuous Drain Current a ID A Power Dissipation a PD Operating Junction and Storage Temperature Range W Symbol Maximum Units t <= 10 sec 62.5 oC/W Steady State 110 oC/W THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta RθJA SOIC-8 Top View 4G2 5 D2 N-Channel MOSFET N-Channel MOSFET
Publication Order Number: DS-AM4962NE_A Notes a. Pulse test: PW <= 3 00us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. Min Typ Max G ate-Threshold V oltage V GS(th) VDS = VGS, ID = 250 uA 1 G ate-Body Leakage I GSS VDS = 0 V, VGS = 20 V ±100 nA VDS = 60 V, VGS = 0 V 1 VDS = 60 V, VGS = 0 V, TJ = 55oC 10 On-State Drain Current A ID(on) VDS = 5 V, VGS = 10 V 20 A VGS = 10 V, ID = 6.4 A 35 VGS = 4.5 V, ID = 5.6 A 45 Forward Tranconductance A gfs VDS = 15 V, ID = 6.4 A 11 S Diode Forward V oltage V SD IS = 2.0 A, VGS = 0 V 1.2 V Total G ate Charge Q g 12.5 G ate-Source Charge Q gs 2.4 Gate-Drain Charge Q gd 2.6 Turn-On Delay Time t d(on) 11 Ris e Time t r 8 Turn-Off Delay Time t d(of f ) 19 Fall-Time t f 6 rDS(on) mΩ Parameter Limits Unit VDD = 30 V, RL = 30 Ω , ID = 1 A, VGEN = 10 V VDS = 30 V, VGS = 4.5 V, ID = 6.4 A nC nS Dynamicb Switching SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED) uAIDSSZero G ate V oltage Drain Current Static Test ConditionsSymbol Drain-Source On-Resistance A
Publication Order Number: DS-AM4962NE_A Typical Electrical Characteristics Output Characteristics Transfer Characteristics On-Resistance vs. Junction TemperatureGate Charge CapacitanceOn-Resistance vs. Drain Current 012345 V DS - Drain-to-Source Voltage (V) ID - Drain Current (A) VGS = 10V 4.5V 23456 V GS - Gate-to-Source Voltage (V) ID - Drain Current (A) TA =-55oC 25oC 125oC 0.8 1.2 1.4 1.6 1.8 2.2 0 6 12 18 24 30 ID - Drain Current (A) rDS(ON) - Normailized On-Resistance 4.5V 10V 0 4 8 1 21 62 0 Qg, Gate Charge (nC) Vgs Voltage ( V ) 0.2 0.6 1.4 1.8 2.2 2.6 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (oC) rDS(ON), - On-Resistance (Normalized) VGS = 10V 400 800 1200 1600 2000 0 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) Ciss Coss Crss
Publication Order Number: DS-AM4962NE_A Typical Electrical Characteristics (N-Channel) Normalized Thermal Transient Impedance, Junction-to-Ambient Single Pulse PowerThreshold Voltage Source-Drain Diode Forward Voltage On -Resistance vs.Gate-to Source Voltage 0.0001 0.001 0.01 0.1 100 VSD - Source-to-Drain Voltage (V) IS - Source CURRENT (A TA = 125oC 25oC 0.02 0.04 0.06 0.08 0.1 0.12 2468 1 0 VGS - Gate-to-Source Voltage (V) rDS(ON) - On-Resistance (OHM) 1.4 1.8 2.2 2.6 -50 -25 0 25 50 75 100 125 150 175 TJ - Temperature (oC) VGS(th), Variance (V) ID = 250µA 0.001 0.01 0.1 1 1 0 1 00 1 000 Tim e (sec) 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse D uration (sec) Normalized Effective Transient Thermal Impedance RθJA(t) = r(t) + RθJA RθJA = 125oC/W TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 P(pk) SINGLE PULSE 0.01 0.02 0.05 0.1 0.2 D = 0.5
Publication Order Number: DS-AM4962NE_A
Package Information
SO-8: 8LEAD H x 45°