AM4960N ANALOGPOWER | Alldatasheet

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Technical content

Publication Order Number: DS-AM4960_A These miniature surface mount MOSFETs utilize a high cell density trench process to provide low r DS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. VDS (V) r DS(on) m(Ω)I D (A) 89 @ VGS = 10V ±4.0 104 @ VGS = 4.5V ±3.7 PRODUCT SUMMARY N-Channel 60-V (D-S) MOSFET

  • L o w r DS(on) provides higher efficiency and extends battery life
  • Low thermal impedance copper leadframe SOIC-8 saves board space
  • Fast switching speed
  • High performance trench technology Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Symbol Limit Units VDS 60 VGS ±20 TA=25 o C± 4 . 0 TA=70 o C± 3 . 3 IDM ±25 IS 2 A TA=25 o C2 . 1 TA=70 o C1 . 3 TJ, Tstg -55 to 150 o C Continuous Source Current (Diode Conduction) a ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Parameter Pulsed Drain Current b V G ate-Source Voltage Drain-Source Voltage Continuous Drain Current a ID A Power Dissipation a PD Operating Junction and Storage Tem perature Range W Symbol Maximum Units t <= 10 sec 62.5 oC/W t <= 5 sec 110 oC/W THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta RθJA SOIC-8 Top View 4G2 5 D2 N-Channel MOSFET N-Channel MOSFET

Publication Order Number: DS-AM4960_A Notes a. Pulse test: PW <= 3 00us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. Min Typ Max G ate-Threshold V oltage V GS(th) VDS = VGS, ID = 250 uA 1 G ate-Body Leakage I GSS VDS = 0 V, VGS = 20 V ±100 nA VDS = 60 V, VGS = 0 V 1 VDS = 60 V , VGS = 0 V, TJ = 55oC 10 On-St at e Drain Current A ID(on) VDS = 5 V, VGS = 10 V 20 A VGS = 10 V , ID = 4.0 A 89 VGS = 4.5 V, ID = 3.7 A 104 Forward Tranconductance A gfs VDS = 15 V , ID = 4.0 A 11 S Diode Forward V oltage V SD IS = 2.0 A, VGS = 0 V 1.1 V Pulsed Source Current (Body Diode) A ISM 5A Total G ate C harge Q g 3.6 G ate-Source Charge Q gs 1.8 G ate-Drain Charge Q gd 1.3 Turn-On Delay Time t d(on) 9 Ris e Time t r 10 Turn-Off Delay Tim e t d(off) 21 Fall-Time t f 8 rDS(on) mΩ Parame te r Limits Unit VDD = 30 V , RL = 30 Ω , ID = 1 A, VGEN = 10 V VDS = 30 V , VGS= 4.5 V , ID = 4.0 A nC nS Dynamicb Sw itching SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED) uAIDSSZero G ate V oltage Drain Current Static Test ConditionsSymbol Drain-Source On-Resistance A

Publication Order Number: DS-AM4960_A Typical Electrical Characteristics On-Resistance vs. Drain Current Gate Charge Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature Output Characteristics 012345 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) 4.5V VGS = 10V 2 2.5 3 3.5 4 4.5 5 V GS - Gate-to-S ource Voltage (V) I D - Drain Current (A) TA = -55 o C o C 125 o C 0.8 1.2 1.4 1.6 1.8 2.2 0 5 10 15 I D - Dr ai n Cur r ent (A) rDS(ON), On-Resistance 10V 4.5V 100 200 300 400 500 600 0 6 12 18 24 30 V DS - Drain-to-Source Voltage (V) C - Capacitance (pF) 0369 1 2 Qg, Total Gate Charge (nC) VGS - Gate-to-Source Voltage ( V ) 0.4 0.6 0.8 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 T J - Junction Tem per atur e ( o rDS(ON), - On-Resistance Normalized ID = 3.6A VGS = 10V

Publication Order Number: DS-AM4960_A 1.2 1.4 1.6 1.8 2.2 -50 -25 0 25 50 75 100 125 150 175 T J - Temperature ( o VGS(th)Variance (V) ID = -250mA 0.001 0.01 0.1 1 10 100 Time (sec) Power (W) SINGLE PULSE RqJA = 125oC/W TA = 25oC 0.02 0.04 0.06 0.08 0.1 2468 1 0 V GS - Gate-to-Source Voltage (V) rDS(ON) - On-Resistance (OHM) ID = 3.6 A 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 1 0 1 00 1 000 Square Wave P uls e Duratio n (s ec) Normalized Effective Transient Thermal Impedance S INGLE P ULS E 0.01 0.02 0.0 0.1 0.2 D = 0.5 RqJ A(t) = r(t) + RqJA RqJA = 1 25oC/W TJ - TA = P * R q JA(t) Duty Cycle, D = t1 / P(pk Typical Electrical Characteristics Normalized Thermal Transient Impedance, Junction-to-Ambient Single Pulse PowerThreshold Voltage Source-Drain Diode Forward Voltage On-R esistance vs. Gate-to-Source Voltage 0.0001 0.001 0.01 0.1 100 V SD - S ource-to-Drain VOLTAGE (V) IS - Source Current (A) TA = 125 o C o C

Publication Order Number: DS-AM4960_A

Package Information

SO-8: 8LEAD H x 45°