AM4929P ANALOGPOWER | Alldatasheet

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Technical content

Publication Order Number: DS-AM4929_E These miniature surface mount MOSFETs utilize a high cell density trench process to provide low r DS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. P-Channel 20-V (D-S) MOSFET

  • Low r DS(on) provides higher efficiency and extends battery life
  • Low thermal impedance copper leadframe SOIC-8 saves board space
  • Fast switching speed
  • High performance trench technology Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature VDS (V) r DS(on) m( Ω) I D (A) PRODUCT SUMMARY -20 Symbol Maximum Units VDS -20 VGS ±12 TA=25 o C -5.2 TA=70 o C -4.1 IDM ±50 IS -2.1 A TA=25 o C 2.1 TA=70 o C 1.3 TJ, T stg -55 to 150 o C Power Dissipation a PD Operating Junction and Storage Temperature Range W Continuous Source Current (Diode Conduction) a ABSOLUTE MAXIMUM RATINGS (T A = 25 o C UNLESS OTHERWISE NOTED) Parameter Pulsed Drain Current b VGate-Source Voltage Drain-Source Voltage Continuous Drain Current a ID A Symbol Maximum Units Maximum Junction-to-Case a t <= 5 sec RθJC 40 o C/W Maximum Junction-to-Ambient a t <= 5 sec RθJA 60 o C/W THERMAL RESISTANCE RATINGS Parameter

Publication Order Number: DS-AM4929_E Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without fu rther notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provide d in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operati ng parameters, including “Typicals” must be validat ed for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situ ation where personal injury or death may occur. Should Buyer purchase or use APL products for any s uch unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, da mages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any cl aim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. Min Typ Max Gate-Threshold Voltage V GS(th) VDS = V GS , I D = -250 uA -0.7 Gate-Body Leakage I GSS VDS = 0 V, V GS = ±12 V ±100 nA VDS = -16 V, V GS = 0 V -1 VDS = -16 V, V GS = 0 V, T J = 55 oC -5 On-State Drain Current A ID(on) VDS = -4.5 V, V GS = -10 V -20 A VGS = -4.5 V, I D = -4.9 A 52 VGS = -2.5 V, I D = -4.0 A 89 VGS = -1.8 V, I D = -3.6 A 124 Forward Tranconductance A gfs VDS = -15 V, I D = -4.9 A 20 S Diode Forward Voltage V SD IS = 2.5 A, V GS = 0 V -0.6 V Total Gate Charge Q g 16.7 Gate-Source Charge Q gs 1.8 Gate-Drain Charge Q gd 1.9 Turn-On Delay Time t d(on) 7 Rise Time t r 13 Turn-Off Delay Time t d(off) 14 Fall-Time t f 9 Dynamic b SPECIFICATIONS (T A = 25 oC UNLESS OTHERWISE NOTED) uA IDSS Zero Gate Voltage Drain Current Static Test Conditions Symbol Parameter Limits VDD = -10 V, R L = 6 Ω , I D = -1 A, VGEN = -4.5 V nS VDS = -10 V, V GS = -4.5 V, ID = -4.9 A nC Unit Drain-Source On-Resistance A rDS(on) mΩ

Publication Order Number: DS-AM4929_E

Package Information

SO-8: 8LEAD H x 45°