AM45N06-16D ANALOGPOWER | Alldatasheet
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Technical content
Publication Order Number: DS-AM45N06-16_A These miniature surface mount MOSFETs utilize a high cell density trench process to provide low r DS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. VDS (V) r DS(on) m( Ω) I D (A) 16 @ V GS = 4.5V 46 19 @ V GS = 2.5V 42 PRODUCT SUMMARY N-Channel 60-V (D-S) MOSFET
- Low r DS(on) provides higher efficiency and extends battery life
- Low thermal impedance copper leadframe DPAK saves board space
- Fast switching speed
- High performance trench technology Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Symbol Limit Units VDS 60 VGS ±12 Continuous Drain Current a TC=25 o C ID 46 IDM 100 IS 50 A Power Dissipation a TC=25 o C PD 50 W TJ, T stg -55 to 175 o COperating Junction and Storage Temperature Range Continuous Source Current (Diode Conduction) a ABSOLUTE MAXIMUM RATINGS (T A = 25 oC UNLESS OTHERWISE NOTED) Parameter Pulsed Drain Current b V Gate-Source Voltage Drain-Source Voltage A Parameter Symbol Maximum Units Maximum Junction-to-Ambient a RθJA 50 oC/W Maximum Junction-to-Case RθJC 3.0 oC/W THERMAL RESISTANCE RATINGS
Publication Order Number: DS-AM45N06-16_A Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without fu rther notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provide d in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operati ng parameters, including “Typicals” must be validat ed for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situ ation where personal injury or death may occur. Should Buyer purchase or use APL products for any s uch unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, da mages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any cl aim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. Min Typ Max Gate-Threshold Voltage V GS(th) VDS = V GS , I D = 250 uA 1 V Gate-Body Leakage I GSS VDS = 0 V, V GS = 12 V ±100 nA VDS = 48 V, V GS = 0 V 1 VDS = 48 V, V GS = 0 V, T J = 55 oC 25 On-State Drain Current A ID(on) VDS = 5 V, V GS = 10 V 34 A VGS = 10 V, I D = 2 A 16 VGS = 4.5 V, I D = 2 A 19 Forward Tranconductance A gfs VDS = 15 V, I D = 2 A 22 S Diode Forward Voltage V SD IS = 2 A, V GS = 0 V 1.1 V Total Gate Charge Q g 50 Gate-Source Charge Q gs 5 Gate-Drain Charge Q gd 10 Turn-On Delay Time t d(on) 6 Rise Time t r 6 Turn-Off Delay Time t d(off) 50 Fall-Time t f 20 VDS = 15 V, V GS = 4.5 V, ID = 2 A nC Dynamic b SPECIFICATIONS (T A = 25 oC UNLESS OTHERWISE NOTED) uA IDSS Zero Gate Voltage Drain Current Static Test Conditions Symbol Parameter Limits Unit VDD = 25 V, R L = 25 Ω , ID = 2 A, VGEN = 10 V nS Drain-Source On-Resistance A rDS(on) mΩ
Publication Order Number: DS-AM45N06-16_A
Package Information
Note: 1. All Dimension Are In mm. 2. Package Body Sizes Exclude Mold Flash, Protrusion Or Gate B urrs. Mold Flash, Protrusion Or Gate Burrs Shall Not Exceed 0.10 mm Per Side. 3. Package Body Sizes Determined At The Outermost Extremes O f The Plastic Body Exclusive Of Mold Flash, Gate Burrs And Interlead Flash, But Including Any Mismatch Between The Top And Bottom Of The Plastic Body.