AM4599C ANALOGPOWER | Alldatasheet

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Technical content

N & P-Channel 60-V (D-S) MOSFET VDS (V) ID(A) 7.7 6.5 -5.0 -4.3 Symbol Nch Limit Pch Limit Units VDS 60 -60 VGS ±20 ±20 TA=25°C 7.7 -4.3 TA=70°C 6.5 -3.9 IDM 60 -60 IS 3 -2.9 A TA=25°C 2.1 2.1 TA=70°C 1.3 1.3 TJ, Tstg °C Symbol Maximum Units 62.5 110 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature -55 to 150 V Steady State RθJA A W °C/W Parameter THERMAL RESISTANCE RATINGS Continuous Drain Current a ID Power Dissipation a PD Parameter Drain-Source Voltage Gate-Source Voltage ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) t <= 10 sec Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Operating Junction and Storage Temperature Range 35 @ VGS = 10V 50 @ VGS = 4.5V -60 Maximum Junction-to-Ambient a 57 @ VGS = -10V 77 @ VGS = -4.5V PRODUCT SUMMARY rDS(on) (mΩ) Key Features:

  • Low rDS(on) trench technology
  • Low thermal impedance
  • Fast switching speed Typical Applications:
  • White LED boost converters
  • Automotive Systems
  • Industrial DC/DC Conversion Circuits Key Features:
  • Low rDS(on) trench technology
  • Low thermal impedance
  • Fast switching speed Typical Applications:
  • White LED boost converters
  • Automotive Systems
  • Industrial DC/DC Conversion Circuits © Preliminary 1 Publication Order Number: DS_AM4599C_1A

Parameter Symbol Test Conditions Min Typ Max Unit VDS = VGS, ID = 250 uA (N-ch) 1 V VDS = VGS, ID = -250 uA (P-ch) -1 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ±20 V ±100 nA VDS = 20 V, VGS = 0 V (N-ch) 1 VDS = -20 V, VGS = 0 V (P-ch) -1 VDS = 5 V, VGS = 10 V (N-ch) 10 A VDS = -5 V, VGS = -10 V (P-ch) -10 A VGS = 10 V, ID = 5.4 A (N-ch) 33 VGS = 4.5 V, ID = 4.4 A (N-ch) 50 VGS = -10 V, ID = -5.2 A (P-ch) 57 VGS = -4.5 V, ID = -4.2 A (P-ch) 77 VDS = 15 V, ID = 5.4 A (N-ch) 22 S VDS = -15 V, ID = -5.2 A (P-ch) 25 S IS = 1.5 A, VGS = 0 V (N-ch) 0.72 V IS = -1 A, VGS = 0 V (P-ch) -0.77 V Total Gate Charge Qg 5 Gate-Source Charge Qgs 3.9 Gate-Drain Charge Qgd 8.2 Turn-On Delay Time td(on) 8 Rise Time tr 9 Turn-Off Delay Time td(off) 49 Fall Time tf 14 Input Capacitance Ciss 1465 Output Capacitance Coss 126 Reverse Transfer Capacitance Crss 114 Total Gate Charge Qg 20 Gate-Source Charge Qgs 5.6 Gate-Drain Charge Qgd 7.9 Turn-On Delay Time td(on) 6 Rise Time tr 13 Turn-Off Delay Time td(off) 71 Fall Time tf 27 Input Capacitance Ciss 1817 Output Capacitance Coss 129 Reverse Transfer Capacitance Crss 111 Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. VGS(th) uA P - Channel VDS = -15 V, VGS = 0 V, f = 1 MHz pF nC ID(on) IDSS rDS(on) mΩ mΩ P - Channel VDD = -30 V, RL = 5.8 Ω, ID = -5.2 A, VGEN = -10 V, RGEN = 6 Ω ns VSD Dynamic b N - Channel VDS = 30 V, VGS = 4.5 V, ID = 5.4 A Forward Transconductance a gfs Diode Forward Voltage a P - Channel VDS = -30 V, VGS = -4.5 V, ID = -5.2 A nC N - Channel VDD = 30 V, RL = 5.6 Ω, ID = 5.4 A, VGEN = 10 V, RGEN = 6 Ω ns N - Channel VDS = 15 V, VGS = 0 V, f = 1 MHz pF Zero Gate Voltage Drain Current Drain-Source On-Resistance a Static

Electrical Characteristics

Gate-Source Threshold Voltage On-State Drain Current a © Preliminary 2 Publication Order Number: DS_AM4599C_1A

  1. On-Resistance vs. Drain Current 2. Transfer Characteristics 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 5. Output Characteristics 6. Capacitance Typical Electrical Characteristics - N-channel 0.02 0.04 0.06 0.08 0 2 4 6 RDS(on) - On-Resistance(Ω) ID-Drain Current (A) 4V,4.5V,6V,8V,10V 3.5V ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 10V,8V,6V,4.5V,4V 3.5V 0.02 0.04 0.06 0.08 0.1 0 2 4 6 8 10 RDS(on) - On-Resistance(Ω) VGS - Gate-to-Source Voltage (V) TJ = 25°C ID = 5.4A 0.01 0.1 100 IS - Source Current (A) VSD - Source-to-Drain Voltage (V) TJ = 25°C 500 1000 1500 2000 2500 3000 0 5 10 15 20 Capacitance (pf) VDS-Drain-to-Source Voltage (V) Ciss Coss Crss F = 1MHz 0 1 2 3 4 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) TJ = 25°C © Preliminary 3 Publication Order Number: DS_AM4599C_1A
  1. Gate Charge 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 8. Normalized On-Resistance Vs Junction Temperature 11. Normalized Thermal Transient Junction to Ambient Typical Electrical Characteristics - N-channel 0 10 20 30 40 VGS-Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) ID = 5.4A VDS = 30V 0.01 0.1 100 1000 0.1 1 10 100 1000 ID Current (A) VDS Drain to Source Voltage (V) 10 uS 100 uS 1 mS 10 mS 100 mS

1 SEC

10 SEC

100 SEC

0.001 0.01 0.1 1 10 100 1000 PEAK TRANSIENT POWER (W) t1 TIME (SEC) 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) RθJA(t) = r(t) + RθJA RθJA = 110°C /W TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.2 0.1 0.05

0.02 P(pk)

D = 0.5 Single Pulse 0.5 1.5 2.5 -50 -25 0 25 50 75 100 125 150 RDS(on) - On-Resistance(Ω) (Normalized) TJ -JunctionTemperature(°C) © Preliminary 4 Publication Order Number: DS_AM4599C_1A

  1. On-Resistance vs. Drain Current 2. Transfer Characteristics 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 5. Output Characteristics 6. Capacitance Typical Electrical Characteristics - P-channel 0.05 0.1 0.15 0 2 4 6 RDS(on) - On-Resistance(Ω) ID-Drain Current (A) 3.5V 4V,4.5V,6V,8V,10V ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 10V,8V,6V,4.5V,4V 3.5V 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 0.2 0 2 4 6 8 10 RDS(on) - On-Resistance(Ω) VGS - Gate-to-Source Voltage (V) TJ = 25°C ID = -5.2A 0 1 2 3 4 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) TJ = 25°C 0.01 0.1 100 IS - Source Current (A) VSD - Source-to-Drain Voltage (V) TJ = 25°C 500 1000 1500 2000 2500 3000 0 5 10 15 20 Capacitance (pf) VDS-Drain-to-Source Voltage (V) Ciss Coss Crss F = 1MHz © Preliminary 5 Publication Order Number: DS_AM4599C_1A
  1. Gate Charge 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation Typical Electrical Characteristics - P-channel 8. Normalized On-Resistance Vs Junction Temperature 11. Normalized Thermal Transient Junction to Ambient 0 10 20 30 40 VGS-Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) ID = -5.2A VDS = -30V 0.01 0.1 100 1000 0.1 1 10 100 1000 ID Current (A) VDS Drain to Source Voltage (V) 10 uS 100 uS 1 mS 10 mS 100 mS

0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) RθJA(t) = r(t) + RθJA RθJA = 110°C /W TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.2 0.1 0.05 D = 0.5 Single Pulse 100 120 0.001 0.01 0.1 1 10 100 1000 PEAK TRANSIENT POWER (W) t1 TIME (SEC) 0.5 1.5 2.5 -50 -25 0 25 50 75 100 125 150 RDS(on) - On-Resistance(Ω) (Normalized) TJ -JunctionTemperature(°C) © Preliminary 6 Publication Order Number: DS_AM4599C_1A

Package Information

Note: 1. All Dimension Are In mm. 2. Package Body Sizes Exclude Mold Flash, Protrusion Or Gate Burrs. Mold Flash, Protrusion Or Gate Burrs Shall Not Exceed 0.10 mm Per Side. 3. Package Body Sizes Determined At The Outermost Extremes Of The Plastic Body Exclusive Of Mold Flash, Tie Bar Burrs, Gate Burrs And Interlead Flash, But Including Any Mismatch Between The Top And Bottom Of The Plastic Body. 4. The Package Top May Be Smaller Than The Package Bottom. 5. Dimension "B" Does Not Include Dambar Protrusion. Allowable Dambar Protrusion Shall Be 0.08 mm Total In Excess Of "B" Dimension At Maximum Material Condition. The Dambar Cannot Be Located On The Lower Radius Of The Foot. © Preliminary 7 Publication Order Number: DS_AM4599C_1A