AM4542C ANALOGPOWER | Alldatasheet
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Publication Order Number: DS-AM4542_D These miniature surface mount MOSFETs utilize a high cell density trench process to provide low r DS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. VDS (V) r DS(on) m(Ω)I D (A) 27 @ VGS = 4.5V 7.3 22 @ VGS = 10V 8.3 30 @ VGS = -10V -7.6 PRODUCT SUMMARY -40 P & N-Channel 40-V (D-S) MOSFET
- L o w r DS(on) provides higher efficiency and extends battery life
- Low thermal impedance copper leadframe SOIC-8 saves board space
- Fast switching speed
- High performance trench technology Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Symbol N-Channel P-Channel Units VDS 40 -40 VGS 20 -20 TA=25 o C 8.3 -7.6 TA=70 o C6 . 8 - 6 . 3 IDM ±50 ±50 IS 2.3 -2.1 A TA=25 o C 2.1 2.1 TA=70 o C1 . 3 1 . 3 TJ, Tstg o C Continuous Source Current (Diode Conduction) a ABSOLUTE MAXIMUM RATINGS (T A = 25 oC UNLESS OTHERWISE NOTED) Parameter Pulsed Drain Current b V Gate-Source Voltage Drain-Source Voltage Continuous Drain Current a ID A Power Dissipation a PD Operating Junction and Storage Temperature Range W -55 to 150 Symbol Maximum Units t <= 10 sec 62.5 oC/W Steady-State 110 oC/W THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta RθJA
Publication Order Number: DS-AM4542_D Notes a. Pulse test: PW <= 3 00us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. Ch Min Typ Max VGS = VDS, ID = 250 uA N1 1 . 5 3 VGS = VDS, ID = -250 uA P- 1 - 1 . 4 - 3 VGS = -20 V, VDS = 0 V P7 ± 1 0 0 VGS = 20 V, VDS = 0 V N6 ± 1 0 0 VDS = -32 V, VGS = 0 V P1 2 n A -1 VDS = 32 V, VGS = 0 V N2 n A 1 VDS = 5 V, VGS = 10 V N2 5 VDS = -5 V, VGS = -10 V P- 5 0 VGS = 10 V, ID = 8.3 A 14 22 VGS = 4.5 V, ID = 7.3 A 17 27 VGS = -10 V, ID = -7.6 A 28 30 VGS = -4.5 V, ID = -6.2 A 35 40 VDS = 15 V, ID = 8.3 A N 40 VDS = -15 V, ID = -7.6 A P3 1 N1 3 3 0 P1 4 3 0 N3 . 3 7 P5 . 8 1 2 N4 . 5 1 0 P1 2 3 0 N 1317 3000 P 1583 4000 N 272 600 P 278 600 N 169 400 P 183 400 N 20 40 P 15 30 N 92 0 P 16 40 N7 0 2 0 0 P6 2 2 0 0 N2 0 4 0 P4 6 1 0 0 Dynamic Turn-On Delay Time Rise Time nS N-Chaneel VDD=15V, VGS=10V, ID=1A , RGEN=25Ω, P-Channel VDD=-15V, VGS=-10V, ID=-1A RGEN=15Ω Fall-Time tf Turn-Off Delay Time td(on) tr td(off) mΩ Input Capacitance Ciss Output Capacitance Coss N-Channel VDS=15V, VGS=0V, f=1MHz P-Channel VDS=-15V, VGS=0V, f=1MHz Drain-Source On-ResistanceA rDS(on) N P On-State Drain CurrentA ID(on) VGS(th) A Gate-Body Leakage IGSS uAIDSSZero Gate Voltage Drain Current Limits Unit SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED) nA Static Test Conditions V SymbolParameter Gate-Threshold Voltage Forward TranconductanceA gfs S pF Reverse Transfer Capacitance Crss Total Gate Charge Qg N-Channel VDS=15V, VGS=4.5V, ID=8.3A P-Channel VDS=-15V, VGS=-4.5V, ID=-7.6A nCGate-Source Charge Qgs Gate-Drain Charge Qgd
Publication Order Number: DS-AM4542_D Typical Electrical Characteristics (N-Channel) Transfer Characteristics On-Resistance vs. Junction TemperatureGate Charge CapacitanceOn Resistance vs. Drain Current 0.6 0.8 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 T J - Junction Temperature ( oC) rDS(ON) - On-Resistance (Ohm) (Normalized) VGS = 10V Output Characteristics 0 0.5 1 1.5 2 2.5 3 3.5 4 VDS(V) IDS Drain Current (A) 3.5V 4.5V through 10V 0 123456 VGS G ate to Source V oltage (V ) ID Drain Current (A) 0.005 0.01 0.015 0.02 0.025 0.03 0.035 0.04 0 1 02 03 04 05 06 0 ID Drain Current (A) RDS(ON) resistance ( Ω) 4.5V 10V 200 400 600 800 1 000 1 200 1 400 1 600 1 800 2000 2200 0 5 10 15 2 0 VDS (V) Capacitance (pF ) Ciss Coss Crs 0 5 10 15 20 25 30 QG, Total Gate Charg e (nC) VGS (V) VD= 1 5V ID= 1 0A
Publication Order Number: DS-AM4542_D Typical Electrical Characteristics (P-Channel) Transfer Characteristics On Resistance Vs Vgs Voltage Capacitance Gate Charge On-Resistance vs. Junction Temperature 0.6 0.7 0.8 0.9 1.1 1.2 1.3 1.4 1.5 1.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature ( o rDS(ON) - On-Resistance (Ohm) (Normalized) VGS = - 10V Output Characteristics 00 . 5 11 . 52 2 . 533 . 54 VDS(V) IDS Drain Current (A) 3V 6V through 10V 3.5V 4.5V 0 123456 VGS G ate to Source Voltage (V ) ID Drain Current (A) 25C 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1 0 1 02 03 04 05 06 0 ID Drain Current (A) RDS(ON) resistance ( Ω) 4.5V 10V 200 400 600 800 1 000 1 200 1 400 1 600 1 800 2000 2200 2400 0 5 10 15 2 0 VDS (V) Capacitance (pF ) Ciss Coss Crs 0 5 10 15 20 25 30 QG, Total Gate Charge (nC) VGS (V) VD= 1 0V ID= 1 0A
Figure 11. Transient Thermal Response Curve
Publication Order Number: DS-AM4542_D
Package Information
SO-8: 8LEAD H x 45°