AM4541CE ANALOGPOWER | Alldatasheet

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Technical content

N & P-Channel 40-V (D-S) MOSFET VDS (V) ID (A) 5.8 4.8 -3.8 -3.2 Symbol Nch Limit Pch Limit Units VDS 40 -40 VGS ±20 ±20 TA=25°C 5.8 -3.8 TA=70°C 4.5 -3.0 IDM 15 -15 IS 2.6 -2.4 A TA=25°C 2.1 2.1 TA=70°C 1.3 1.3 TJ, Tstg °C Symbol Maximum Units 62.5 110 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature rDS(on) (mΩ) 42 @ VGS = 10V t <= 10 secMaximum Junction-to-Ambient a Steady State RθJA A W °C/W Parameter THERMAL RESISTANCE RATINGS Continuous Drain Current a ID Power Dissipation a Operating Junction and Storage Temperature Range -55 to 150 Parameter Drain-Source Voltage Gate-Source Voltage PRODUCT SUMMARY -40 PD Pulsed Drain Current b Continuous Source Current (Diode Conduction) a ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) 60 @ VGS = 4.5V 98 @ VGS = -10V 135 @ VGS = -4.5V V Key Features:

  • Low rDS(on) trench technology
  • Low thermal impedance
  • Fast switching speed Typical Applications:
  • DC/DC Conversion
  • Power Routing
  • Motor Drives SO-8 © Preliminary 1 Publication Order Number: DS_AM4541CE_1A

Parameter Symbol Test Conditions Min Typ Max Unit VDS = VGS, ID = 250 uA (Nch) 1 V VDS = VGS, ID = -250 uA (Pch) -1 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ±20 V ±10 uA VDS = 32 V, VGS = 0 V (Nch) 1 VDS = -32 V, VGS = 0 V (Pch) -1 VDS = 5 V, VGS = 10 V (Nch) 8 A VDS = -5 V, VGS = -10 V (Pch) -6 A VGS = 10 V, ID = 2.9 A (Nch) 42 VGS = 4.5 V, ID = 2.4 A (Nch) 60 VGS = -10 V, ID = -1.9 A (Pch) 98 VGS = -4.5 V, ID = -1.6 A (Pch) 135 VDS = 15 V, ID = 2.9 A (Nch) 11 S VDS = -15 V, ID = -1.9 A (Pch) 6 S IS = 1.3 A, VGS = 0 V (Nch) 0.8 V IS = -1.2 A, VGS = 0 V (Pch) -0.84 V Total Gate Charge Qg 3.7 Gate-Source Charge Qgs 1.0 Gate-Drain Charge Qgd 1.6 Turn-On Delay Time td(on) 5 Rise Time tr 5 Turn-Off Delay Time td(off) 20 Fall Time tf 6 Input Capacitance Ciss 324 Output Capacitance Coss 43 Reverse Transfer Capacitance Crss 34 Total Gate Charge Qg 6.0 Gate-Source Charge Qgs 1.3 Gate-Drain Charge Qgd 2.5 Turn-On Delay Time td(on) 6 Rise Time tr 6 Turn-Off Delay Time td(off) 26 Fall Time tf 12 Input Capacitance Ciss 384 Output Capacitance Coss 51 Reverse Transfer Capacitance Crss 44 Gate-Source Threshold Voltage Zero Gate Voltage Drain Current Dynamic b nC N - Channel VDS = 20 V, RL = 6.9 Ω, ID = 2.9 A, VGEN = 10 V, RGEN = 6 Ω ns Static

Electrical Characteristics

Forward Transconductance a gfs On-State Drain Current a Drain-Source On-Resistance a VGS(th) ID(on) IDSS rDS(on) VSD N - Channel VDS = 20 V, VGS = 4.5 V, ID = 2.9 A P - Channel VDS = -20 V, VGS = -4.5 V, ID = -1.9 A uA mΩ mΩ P - Channel VDS = -15 V, VGS = 0 V, f = 1 Mhz pF N - Channel VDS = 15 V, VGS = 0 V, f = 1 Mhz pF nC P - Channel VDS = -20 V, RL = 10.5 Ω, ID = -1.9 A, VGEN = -10 V, RGEN = 6 Ω ns Diode Forward Voltage a © Preliminary 2 Publication Order Number: DS_AM4541CE_1A

  1. On-Resistance vs. Drain Current 2. Transfer Characteristics 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 5. Output Characteristics 6. Capacitance Typical Electrical Characteristics - N-channel 0.03 0.06 0.09 0.12 0.15 0 1 2 3 4 5 6 RDS(on) - On-Resistance(Ω) ID-Drain Current (A) 3.5V 4.5V,6V,8V,10V ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 10V,8V,6V,4.5V 3.5V 0.1 0.2 0.3 0.4 0.5 0 2 4 6 8 10 RDS(on) - On-Resistance(Ω) VGS - Gate-to-Source Voltage (V) TJ = 25°C TJ = 25°C 0.01 0.1 IS - Source Current (A) VSD - Source-to-Drain Voltage (V) TJ = 25°C 100 200 300 400 500 600 0 5 10 15 20 Capacitance (pf) VDS-Drain-to-Source Voltage (V) Ciss Coss Crss F = 1MHz 0 1 2 3 4 5 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) TJ = 25°C ID = 2.9A © Preliminary 3 Publication Order Number: DS_AM4541CE_1A
  1. Gate Charge 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation Typical Electrical Characteristics - N-channel 8. Normalized On-Resistance Vs Junction Temperature 11. Normalized Thermal Transient Junction to Ambient 0.01 0.1 100 0.1 1 10 100 1000 ID Current (A) VDS Drain to Source Voltage (V) 10 uS 100 uS 1 mS 10 mS 100 mS

1 SEC

10 SEC

100 SEC

0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) RθJA(t) = r(t) + RθJA 0.2 0.1 0.05 0.02 P(pk) D = 0.5 Single Pulse TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.5 1.5 -50 -25 0 25 50 75 100 125 150 RDS(on) - On-Resistance(Ω) (Normalized) TJ -JunctionTemperature(°C) 0 2 4 6 8 10 VGS-Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) RθJA = 110 °C /W ID = 2.9A VDS = 20V 0.001 0.01 0.1 1 10 100 1000 PEAK TRANSIENT POWER (W) t1 TIME (SEC) © Preliminary 4 Publication Order Number: DS_AM4541CE_1A

  1. On-Resistance vs. Drain Current 2. Transfer Characteristics 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 5. Output Characteristics 6. Capacitance Typical Electrical Characteristics - P-channel 1000 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0 1 2 3 RDS(on) - On-Resistance(Ω) ID-Drain Current (A) 3.5V,4V,4.5V,6V,8V,10V 2.5V ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 10V,8V,6V, 4.5V,4V,3.5V 2.5V 0.2 0.4 0.6 0.8 0 2 4 6 8 10 RDS(on) - On-Resistance(Ω) VGS - Gate-to-Source Voltage (V) TJ = 25°C 0 1 2 3 4 5 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) TJ = 25°C 0.01 0.1 IS - Source Current (A) VSD - Source-to-Drain Voltage (V) TJ = 25°C 100 200 300 400 500 600 0 5 10 15 20 Capacitance (pf) VDS-Drain-to-Source Voltage (V) Ciss Coss Crss F = 1MHz ID = -1.9A © Preliminary 5 Publication Order Number: DS_AM4541CE_1A
  1. Gate Charge 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 8. Normalized On-Resistance Vs Junction Temperature Typical Electrical Characteristics - P-channel 11. Normalized Thermal Transient Junction to Ambient 0.01 0.1 100 0.1 1 10 100 1000 ID Current (A) VDS Drain to Source Voltage (V) 10 uS 100 uS 1 mS 10 mS 100 mS

0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) RθJA(t) = r(t) + RθJA 0.2 0.1 0.05 0.02 P(pk) D = 0.5 Single Pulse TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.001 0.01 0.1 1 10 100 1000 PEAK TRANSIENT POWER (W) t1 TIME (SEC) 0.5 1.5 -50 -25 0 25 50 75 100 125 150 RDS(on) - On-Resistance(Ω) (Normalized) TJ -JunctionTemperature(°C) 0 3 6 9 12 15 VGS-Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) RθJA = 110 °C /W VDS = -20V ID = -1.9A © Preliminary 6 Publication Order Number: DS_AM4541CE_1A

Package Information

Note: 1. All Dimension Are In mm. 2. Package Body Sizes Exclude Mold Flash, Protrusion Or Gate Burrs. Mold Flash, Protrusion Or Gate Burrs Shall Not Exceed 0.10 mm Per Side. 3. Package Body Sizes Determined At The Outermost Extremes Of The Plastic Body Exclusive Of Mold Flash, Tie Bar Burrs, Gate Burrs And Interlead Flash, But Including Any Mismatch Between The Top And Bottom Of The Plastic Body. 4. The Package Top May Be Smaller Than The Package Bottom. 5. Dimension "B" Does Not Include Dambar Protrusion. Allowable Dambar Protrusion Shall Be 0.08 mm Total In Excess Of "B" Dimension At Maximum Material Condition. The Dambar Cannot Be Located On The Lower Radius Of The Foot. © Preliminary 7 Publication Order Number: DS_AM4541CE_1A