AM4535C ANALOGPOWER | Alldatasheet
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Technical content
N & P-Channel 30-V (D-S) MOSFET VDS (V) ID (A) 11.3 8.8 -10.6 -8.6 Symbol Nch Limit Pch Limit Units VDS 30 -30 VGS ±20 ±20 TA=25°C 11.3 -10.6 TA=70°C 8.9 -8.3 IDM 40 -40 IS 3.1 -2.9 A TA=25°C 2.1 2.1 TA=70°C 1.3 1.3 TJ, Tstg °C Symbol Maximum Units 62.5 110 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature V PRODUCT SUMMARY PD Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Operating Junction and Storage Temperature Range -55 to 150 Parameter Drain-Source Voltage Gate-Source Voltage ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) t <= 10 secMaximum Junction-to-Ambient a Steady State RθJA A W °C/W Parameter THERMAL RESISTANCE RATINGS Continuous Drain Current a ID Power Dissipation a rDS(on) (mΩ) 11 @ VGS = 10V -30 12.5 @ VGS = -10V 19 @ VGS = -4.5V 30 18 @ VGS = 4.5V Key Features:
- Low rDS(on) trench technology
- Low thermal impedance
- Fast switching speed Typical Applications:
- White LED boost converters
- Automotive Systems
- Industrial DC/DC Conversion Circuits SO-8 © Preliminary 1 Publication Order Number: DS_AM4535C_1A
Parameter Symbol Test Conditions Min Typ Max Unit VDS = VGS, ID = 250 uA (Nch) 1 V VDS = VGS, ID = -250 uA (Pch) -1 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ±20 V ±100 nA VDS = 24 V, VGS = 0 V (Nch) 1 VDS = -24 V, VGS = 0 V (Pch) -1 VDS = 5 V, VGS = 10 V (Nch) 16 A VDS = -5 V, VGS = -4.5 V (Pch) -15 A VGS = 10 V, ID = 10 A (Nch) 11 VGS = 4.5 V, ID = 8 A (Nch) 18 VGS = -10 V, ID = -8 A (Pch) 12.5 VGS = -4.5 V, ID = -6 A (Pch) 19 VDS = 15 V, ID = 12 A (Nch) 40 S VDS = -15 V, ID = -12 A (Pch) 28 S IS = 1.6 A, VGS = 0 V (Nch) 0.72 V IS = -1.5 A, VGS = 0 V (Pch) -0.76 V Total Gate Charge Qg 12 Gate-Source Charge Qgs 2.6 Gate-Drain Charge Qgd 4.4 Turn-On Delay Time td(on) 3 Rise Time tr 7 Turn-Off Delay Time td(off) 34 Fall Time tf 12 Input Capacitance Ciss 1935 Output Capacitance Coss 182 Reverse Transfer Capacitance Crss 200 Total Gate Charge Qg 28 Gate-Source Charge Qgs 8.1 Gate-Drain Charge Qgd 8.5 Turn-On Delay Time td(on) 7 Rise Time tr 9 Turn-Off Delay Time td(off) 91 Fall Time tf 35 Input Capacitance Ciss 2309 Output Capacitance Coss 283 Reverse Transfer Capacitance Crss 230 pF nC P - Channel VDS = -15 V, RL = 7.5 Ω, ID = -2 A, VGEN = -4.5 V, RGEN = 6 Ω ns VGS(th) ID(on) IDSS rDS(on) VSD N - Channel VDS = 15 V, VGS = 4.5 V, ID = 2 A P - Channel VDS = -15 V, VGS = -4.5 V, ID = -2 A uA mΩ mΩ P - Channel VDS = -15 V, VGS = 0 V, f = 1 Mhz pF N - Channel VDS = 15 V, VGS = 0 V, f = 1 Mhz Diode Forward Voltage a Dynamic b nC N - Channel VDS = 15 V, RL = 7.5 Ω, ID = 2 A, VGEN = 10 V, RGEN = 6 Ω ns Static
Electrical Characteristics
Forward Transconductance a gfs On-State Drain Current a Gate-Source Threshold Voltage Zero Gate Voltage Drain Current Drain-Source On-Resistance a © Preliminary 2 Publication Order Number: DS_AM4535C_1A
- On-Resistance vs. Drain Current 2. Transfer Characteristics 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 5. Output Characteristics 6. Capacitance Typical Electrical Characteristics - N-channel 0.005 0.01 0.015 0.02 0.025 0.03 0 10 20 30 RDS(on) - On-Resistance(Ω) ID-Drain Current (A) 3.5V 4.5V,6V,8V,10V 0 0.2 0.4 0.6 0.8 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 10V,8V, 6V,4.5V 3.5V 0.02 0.04 0.06 0.08 0.1 0 2 4 6 8 10 RDS(on) - On-Resistance(Ω) VGS - Gate-to-Source Voltage (V) TJ = 25°C TJ = 25°C 0.01 0.1 100 IS - Source Current (A) VSD - Source-to-Drain Voltage (V) TJ = 25°C 500 1000 1500 2000 2500 3000 0 5 10 15 20 Capacitance (pf) VDS-Drain-to-Source Voltage (V) Ciss Coss Crss F = 1MHz 0 1 2 3 4 5 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) TJ = 25°C ID = 2A © Preliminary 3 Publication Order Number: DS_AM4535C_1A
- Gate Charge 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 8. Normalized On-Resistance Vs Junction Temperature 11. Normalized Thermal Transient Junction to Ambient Typical Electrical Characteristics - N-channel 0.01 0.1 100 1000 0.1 1 10 100 1000 ID Current (A) VDS Drain to Source Voltage (V) 10 uS 100 uS 1 mS 10 mS 100 mS
1 SEC
10 SEC
100 SEC
0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) RθJA(t) = r(t) + RθJA 0.2 0.1 0.05 0.02 P(pk) D = 0.5 Single Pulse TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.5 1.5 -50 -25 0 25 50 75 100 125 150 RDS(on) - On-Resistance(Ω) (Normalized) TJ -JunctionTemperature(°C) 0 10 20 30 VGS-Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) RθJA = 110 °C /W ID = 2A VDS = 15V 100 0.001 0.01 0.1 1 10 100 1000 PEAK TRANSIENT POWER (W) t1 TIME (SEC) © Preliminary 4 Publication Order Number: DS_AM4535C_1A
- On-Resistance vs. Drain Current 2. Transfer Characteristics 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 5. Output Characteristics 6. Capacitance Typical Electrical Characteristics - P-channel 1000 0.01 0.02 0.03 0.04 0 5 10 15 RDS(on) - On-Resistance(Ω) ID-Drain Current (A) 4V,4.5V,6V,8V,10V 3.5V 0 0.1 0.2 0.3 0.4 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 10V,8V,6V, 4.5V,4V 3.5V 0.02 0.04 0.06 0.08 0.1 0 2 4 6 8 10 RDS(on) - On-Resistance(Ω) VGS - Gate-to-Source Voltage (V) TJ = 25°C 0 1 2 3 4 5 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) TJ = 25°C 0.01 0.1 100 IS - Source Current (A) VSD - Source-to-Drain Voltage (V) TJ = 25°C 500 1000 1500 2000 2500 3000 0 5 10 15 20 Capacitance (pf) VDS-Drain-to-Source Voltage (V) Ciss Coss Crss F = 1MHz ID = -2A © Preliminary 5 Publication Order Number: DS_AM4535C_1A
- Gate Charge 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 11. Normalized Thermal Transient Junction to Ambient Typical Electrical Characteristics - P-channel 8. Normalized On-Resistance Vs Junction Temperature 0.01 0.1 100 1000 0.1 1 10 100 1000 ID Current (A) VDS Drain to Source Voltage (V) 10 uS 100 uS 1 mS 10 mS 100 mS
0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) RθJA(t) = r(t) + RθJA 0.2 0.1 0.05
0.02 P(pk)
D = 0.5 Single Pulse TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 100 120 0.001 0.01 0.1 1 10 100 1000 PEAK TRANSIENT POWER (W) t1 TIME (SEC) 0.5 1.5 -50 -25 0 25 50 75 100 125 150 RDS(on) - On-Resistance(Ω) (Normalized) TJ -JunctionTemperature(°C) 0 10 20 30 40 50 60 VGS-Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) RθJA = 110 °C /W VDS = -15V ID = -2A © Preliminary 6 Publication Order Number: DS_AM4535C_1A
Package Information
Note: 1. All Dimension Are In mm. 2. Package Body Sizes Exclude Mold Flash, Protrusion Or Gate Burrs. Mold Flash, Protrusion Or Gate Burrs Shall Not Exceed 0.10 mm Per Side. 3. Package Body Sizes Determined At The Outermost Extremes Of The Plastic Body Exclusive Of Mold Flash, Tie Bar Burrs, Gate Burrs And Interlead Flash, But Including Any Mismatch Between The Top And Bottom Of The Plastic Body. 4. The Package Top May Be Smaller Than The Package Bottom. 5. Dimension "B" Does Not Include Dambar Protrusion. Allowable Dambar Protrusion Shall Be 0.08 mm Total In Excess Of "B" Dimension At Maximum Material Condition. The Dambar Cannot Be Located On The Lower Radius Of The Foot. © Preliminary 7 Publication Order Number: DS_AM4535C_1A