AM4520H ANALOGPOWER | Alldatasheet
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Technical content
P & N-Channel 20-V (D-S) MOSFET VDS (V) ID(A) 6.6 6.2 -5.2 -4.4 Symbol Nch Limit Pch Limit Units VDS 20 -20 VGS ±8 ±8 TA=25°C 6.6 -5.2 TA=70°C 5 -3.8 IDM 20 -20 IS 2.2 -2.2 A TA=25°C 2.1 2.1 TA=70°C 1.3 1.3 TJ, Tstg °C Symbol Maximum Units 62.5 110 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature -55 to 150 V Steady State RθJA A W °C/W Parameter THERMAL RESISTANCE RATINGS Continuous Drain Current a ID Power Dissipation a PD Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Operating Junction and Storage Temperature Range Parameter Drain-Source Voltage Gate-Source Voltage ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) t <= 10 sec 47 @ VGS = 4.5V 55 @ VGS = 2.5V -20 Maximum Junction-to-Ambient a 79 @ VGS = -4.5V 110 @ VGS = -2.5V PRODUCT SUMMARY rDS(on) (mΩ) Key Features:
- Low rDS(on) trench technology
- Low thermal impedance
- Fast switching speed Typical Applications:
- White LED boost converters
- Automotive Systems
- Industrial DC/DC Conversion Circuits Key Features:
- Low rDS(on) trench technology
- Low thermal impedance
- Fast switching speed Typical Applications:
- White LED boost converters
- Automotive Systems
- Industrial DC/DC Conversion Circuits © Preliminary 1 Publication Order Number: DS_AM4520H_1A
Parameter Symbol Test Conditions Min Typ Max Unit VDS = VGS, ID = 250 uA (N-ch) 1 V VDS = VGS, ID = -250 uA (P-ch) -1 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ±8 V ±100 nA VDS = 8 V, VGS = 0 V (N-ch) 1 VDS = -8 V, VGS = 0 V (P-ch) -1 VDS = 5 V, VGS = 4.5 V (N-ch) 10 A VDS = -5 V, VGS = -4.5 V (P-ch) -10 A VGS = 4.5 V, ID = 5.3 A (N-ch) 47 VGS = 2.5 V, ID = 5 A (N-ch) 55 VGS = -4.5 V, ID = -4.2 A (P-ch) 79 VGS = -2.5 V, ID = -3.8 A (P-ch) 110 VDS = 10 V, ID = 5.3 A (N-ch) 10 S VDS = -10 V, ID = -4.2 A (P-ch) 10 S IS = 1.1 A, VGS = 0 V (N-ch) 0.7 V IS = -1.1 A, VGS = 0 V (P-ch) -0.73 V Total Gate Charge Qg 6 Gate-Source Charge Qgs 0.9 Gate-Drain Charge Qgd 2.1 Turn-On Delay Time td(on) 7 Rise Time tr 24 Turn-Off Delay Time td(off) 35 Fall Time tf 19 Input Capacitance Ciss 439 Output Capacitance Coss 78 Reverse Transfer Capacitance Crss 68 Total Gate Charge Qg 11 Gate-Source Charge Qgs 2.8 Gate-Drain Charge Qgd 2.7 Turn-On Delay Time td(on) 10 Rise Time tr 20 Turn-Off Delay Time td(off) 49 Fall Time tf 21 Input Capacitance Ciss 683 Output Capacitance Coss 90 Reverse Transfer Capacitance Crss 75 VGS(th) uA P - Channel VDS = -15 V, VGS = 0 V, f = 1 MHz pF nC ID(on) IDSS rDS(on) mΩ mΩ P - Channel VDD = -10 V, RL = 2.3 Ω, ID = -4.2 A, VGEN = -4.5 V, RGEN = 6 Ω ns VSD Dynamic N - Channel VDS = 10 V, VGS = 4.5 V, ID = 5.3 A Forward Transconductance gfs Diode Forward Voltage P - Channel VDS = -10 V, VGS = 4.5 V, ID = -4.2 A nC N - Channel VDD = 10 V, RL = 1.8 Ω, ID = 5.3 A, VGEN = 4.5 V, RGEN = 6 Ω ns N - Channel VDS = 15 V, VGS = 0 V, f = 1 MHz pF Zero Gate Voltage Drain Current Drain-Source On-Resistance Static
Electrical Characteristics
Gate-Source Threshold Voltage On-State Drain Current © Preliminary 2 Publication Order Number: DS_AM4520H_1A
- On-Resistance vs. Drain Current 2. Transfer Characteristics 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 5. Output Characteristics 6. Capacitance Typical Electrical Characteristics - N-channel 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0 2 4 6 8 10 RDS(on) - On-Resistance(Ω) ID-Drain Current (A) 2.5V 3.5V,4V,4.5V,6V 0 0.2 0.4 0.6 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 6V,4.5V,4V,3.5V 2.5V 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0 1 2 3 4 5 6 RDS(on) - On-Resistance(Ω) VGS - Gate-to-Source Voltage (V) TJ = 25°C ID = 5.3A 0.01 0.1 IS - Source Current (A) VSD - Source-to-Drain Voltage (V) TJ = 25°C 100 200 300 400 500 600 700 800 0 5 10 15 20 Capacitance (pf) VDS-Drain-to-Source Voltage (V) Ciss Coss Crss F = 1MHz 0 1 2 3 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) TJ = 25°C © Preliminary 3 Publication Order Number: DS_AM4520H_1A
- Gate Charge 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 8. Normalized On-Resistance Vs Junction Temperature 11. Normalized Thermal Transient Junction to Ambient Typical Electrical Characteristics - N-channel 0 2 4 6 8 10 VGS-Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) ID = 5.3A VDS = 10V 0.01 0.1 100 0.1 1 10 100 ID Current (A) VDS Drain to Source Voltage (V) 10 uS 100 uS 1 mS 10 mS 100 mS
1 SEC
10 SEC
100 SEC
0.001 0.01 0.1 1 10 100 1000 PEAK TRANSIENT POWER (W) t1 TIME (SEC) 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) RθJA(t) = r(t) + RθJA RθJA = 110°C /W TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.2 0.1 0.05 0.02 P(pk) D = 0.5 Single Pulse 0.5 1.5 -50 -25 0 25 50 75 100 125 150 RDS(on) - On-Resistance(Ω) (Normalized) TJ -JunctionTemperature(°C) © Preliminary 4 Publication Order Number: DS_AM4520H_1A
- On-Resistance vs. Drain Current 2. Transfer Characteristics 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 5. Output Characteristics 6. Capacitance Typical Electrical Characteristics - P-channel 0.04 0.08 0.12 0.16 0 2 4 6 8 RDS(on) - On-Resistance(Ω) ID-Drain Current (A) 3.5V,4V,4.5V,6V 2.5V 0 0.2 0.4 0.6 0.8 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 6V,4.5V,4V,3.5V,3V 2.5V 0.05 0.1 0.15 0.2 0.25 0.3 0 2 4 6 RDS(on) - On-Resistance(Ω) VGS - Gate-to-Source Voltage (V) TJ = 25°C ID = -4.2A 0 1 2 3 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) TJ = 25°C 0.01 0.1 IS - Source Current (A) VSD - Source-to-Drain Voltage (V) TJ = 25°C 200 400 600 800 1000 1200 1400 0 5 10 15 20 Capacitance (pf) VDS-Drain-to-Source Voltage (V) Ciss Coss Crss F = 1MHz © Preliminary 5 Publication Order Number: DS_AM4520H_1A
- Gate Charge 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation Typical Electrical Characteristics - P-channel 8. Normalized On-Resistance Vs Junction Temperature 11. Normalized Thermal Transient Junction to Ambient 0 5 10 15 20 VGS-Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) ID = -4.2A VDS = -10V 0.01 0.1 100 0.1 1 10 100 ID Current (A) VDS Drain to Source Voltage (V) 10 uS 100 uS 1 mS 10 mS 100 mS
0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) RθJA(t) = r(t) + RθJA RθJA = 110°C /W TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.2 0.1 0.05 0.02 P(pk) D = 0.5 Single Pulse 0.001 0.01 0.1 1 10 100 1000 PEAK TRANSIENT POWER (W) t1 TIME (SEC) 0.5 1.5 -50 -25 0 25 50 75 100 125 150 RDS(on) - On-Resistance(Ω) (Normalized) TJ -JunctionTemperature(°C) © Preliminary 6 Publication Order Number: DS_AM4520H_1A
Package Information
Note: 1. All Dimension Are In mm. 2. Package Body Sizes Exclude Mold Flash, Protrusion Or Gate Burrs. Mold Flash, Protrusion Or Gate Burrs Shall Not Exceed 0.10 mm Per Side. 3. Package Body Sizes Determined At The Outermost Extremes Of The Plastic Body Exclusive Of Mold Flash, Tie Bar Burrs, Gate Burrs And Interlead Flash, But Including Any Mismatch Between The Top And Bottom Of The Plastic Body. 4. The Package Top May Be Smaller Than The Package Bottom. 5. Dimension "B" Does Not Include Dambar Protrusion. Allowable Dambar Protrusion Shall Be 0.08 mm Total In Excess Of "B" Dimension At Maximum Material Condition. The Dambar Cannot Be Located On The Lower Radius Of The Foot. © Preliminary 7 Publication Order Number: DS_AM4520H_1A