AM4513C ANALOGPOWER | Alldatasheet

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Technical content

N & P-Channel 100-V (D-S) MOSFET VDS (V) ID (A) 6.0 5.2 -2.5 -2.4 Symbol Nch Limit Pch Limit Units VDS 100 -100 VGS ±20 ±20 TA=25°C 6.0 -2.5 TA=70°C 4.7 -2 IDM 20 -10 IS 2.5 -2.4 A TA=25°C 2.1 2.1 TA=70°C 1.3 1.3 TJ, Tstg °C Symbol Maximum Units 62.5 110 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature -100 230 @ VGS = -10V 250 @ VGS = -4.5V 100 52 @ VGS = 4.5V V PRODUCT SUMMARY PD Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Operating Junction and Storage Temperature Range -55 to 150 Parameter Drain-Source Voltage Gate-Source Voltage ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) t <= 10 secMaximum Junction-to-Ambient a Steady State RθJA A W °C/W Parameter THERMAL RESISTANCE RATINGS Continuous Drain Current a ID Power Dissipation a rDS(on) (mΩ) 40 @ VGS = 10V Key Features:

  • Low rDS(on) trench technology
  • Low thermal impedance
  • Fast switching speed Typical Applications:
  • White LED boost converters
  • Automotive Systems
  • Industrial DC/DC Conversion Circuits SO-8 © Preliminary 1 Publication Order Number: DS_AM4513C_1A

Parameter Symbol Test Conditions Min Typ Max Unit VDS = VGS, ID = 250 uA (Nch) 1 V VDS = VGS, ID = -250 uA (Pch) -1 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ±20 V ±100 nA VDS = 80 V, VGS = 0 V (Nch) 1 VDS = -80 V, VGS = 0 V (Pch) -1 VDS = 5 V, VGS = 10 V (Nch) 7.5 A VDS = -5 V, VGS = -10 V (Pch) -3.2 A VGS = 10 V, ID = 4 A (Nch) 40 VGS = 4.5 V, ID = 3 A (Nch) 52 VGS = -10 V, ID = -1.5 A (Pch) 230 VGS = -4.5 V, ID = -1.2 A (Pch) 250 VDS = 15 V, ID = 4 A (Nch) 12 S VDS = -15 V, ID = -1.5 A (Pch) 8 S IS = 1.3 A, VGS = 0 V (Nch) 0.78 V IS = -1.2 A, VGS = 0 V (Pch) -0.81 V Total Gate Charge Qg 6.2 Gate-Source Charge Qgs 2.1 Gate-Drain Charge Qgd 2.9 Turn-On Delay Time td(on) 4 Rise Time tr 5 Turn-Off Delay Time td(off) 19 Fall Time tf 7 Input Capacitance Ciss 404 Output Capacitance Coss 87 Reverse Transfer Capacitance Crss 5 Total Gate Charge Qg 15.7 Gate-Source Charge Qgs 4.5 Gate-Drain Charge Qgd 5.1 Turn-On Delay Time td(on) 8 Rise Time tr 5 Turn-Off Delay Time td(off) 42 Fall Time tf 13 Input Capacitance Ciss 924 Output Capacitance Coss 27 Reverse Transfer Capacitance Crss 24 N - Channel VDS = 50 V, VGS = 0 V, f = 1 Mhz pF nC P - Channel VDS = -50 V, RL = 33.3 Ω, ID = -1.5 A, VGEN = -10 V, RGEN = 6 Ω ns VGS(th) ID(on) IDSS rDS(on) VSD N - Channel VDS = 50 V, VGS = 4.5 V, ID = 4 A P - Channel VDS = -50 V, VGS = 4.5 V, ID = -1.5 A uA mΩ mΩ P - Channel VDS = -50 V, VGS = 0 V, f = 1 Mhz pF Diode Forward Voltage a Dynamic b nC N - Channel VDS = 50 V, RL = 12.5 Ω, ID = 4 A, VGEN = 10 V, RGEN = 6 Ω ns Static

Electrical Characteristics

Forward Transconductance a gfs On-State Drain Current a Gate-Source Threshold Voltage Zero Gate Voltage Drain Current Drain-Source On-Resistance a © Preliminary 2 Publication Order Number: DS_AM4513C_1A

  1. On-Resistance vs. Drain Current 2. Transfer Characteristics 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 5. Output Characteristics 6. Capacitance Typical Electrical Characteristics - N-channel 0.05 0.1 0.15 0 0.5 1 1.5 2 2.5 3 RDS(on) - On-Resistance(Ω) ID-Drain Current (A) 3.5V 4V,4.5V,6V,8V,10V 0.5 1.5 2.5 0 0.1 0.2 0.3 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 10V,8V, 6V,4.5V, 3.5V 0.05 0.1 0.15 0.2 0 2 4 6 8 10 RDS(on) - On-Resistance(Ω) VGS - Gate-to-Source Voltage (V) TJ = 25°CTJ = 25°C 0.1 100 IS - Source Current (A) VSD - Source-to-Drain Voltage (V) TJ = 25°C 100 200 300 400 500 600 0 10 20 30 40 50 Capacitance (pf) VDS-Drain-to-Source Voltage (V) Ciss Coss Crss F = 1MHz 0 1 2 3 4 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) TJ = 25°C ID = 4A © Preliminary 3 Publication Order Number: DS_AM4513C_1A
  1. Gate Charge 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 8. Normalized On-Resistance Vs Junction Temperature 11. Normalized Thermal Transient Junction to Ambient Typical Electrical Characteristics - N-channel 0.01 0.1 100 0.1 1 10 100 1000 ID Current (A) VDS Drain to Source Voltage (V) 10 uS 100 uS 1 mS 10 mS 100 mS

1 SEC

10 SEC

100 SEC

0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) RθJA(t) = r(t) + RθJA0.2 0.1 0.05

0.02 P(pk)

D = 0.5 Single Pulse TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.5 1.5 2.5 -50 -25 0 25 50 75 100 125 150 RDS(on) - On-Resistance(Ω) (Normalized) TJ -JunctionTemperature(°C) 0 2 4 6 8 10 12 VGS-Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) RθJA = 110 °C /W ID = 4A VDS = 50V 0.001 0.01 0.1 1 10 100 1000 PEAK TRANSIENT POWER (W) t1 TIME (SEC) © Preliminary 4 Publication Order Number: DS_AM4513C_1A

  1. On-Resistance vs. Drain Current 2. Transfer Characteristics 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 5. Output Characteristics 6. Capacitance Typical Electrical Characteristics - P-channel 0.1 0.2 0.3 0.4 0 1 2 3 RDS(on) - On-Resistance(Ω) ID-Drain Current (A) 4V,4.5V,6V,8V,10V 3.5V 0 0.2 0.4 0.6 0.8 1 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 10V,8V,6V,4.5V,4V,3.5V 0.2 0.4 0.6 0.8 0 2 4 6 8 10 RDS(on) - On-Resistance(Ω) VGS - Gate-to-Source Voltage (V) TJ = 25°C 0 1 2 3 4 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) TJ = 25°C 0.1 IS - Source Current (A) VSD - Source-to-Drain Voltage (V) TJ = 25°C 200 400 600 800 1000 1200 0 10 20 30 40 50 Capacitance (pf) VDS-Drain-to-Source Voltage (V) Ciss Coss Crss F = 1MHz ID = -1.5A © Preliminary 5 Publication Order Number: DS_AM4513C_1A
  1. Gate Charge 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 8. Normalized On-Resistance Vs Junction Temperature 11. Normalized Thermal Transient Junction to Ambient Typical Electrical Characteristics - P-channel 0.01 0.1 100 0.1 1 10 100 1000 ID Current (A) VDS Drain to Source Voltage (V) 10 uS 100 uS 1 mS 10 mS 100 mS

0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) RθJA(t) = r(t) + RθJA0.2 0.1 0.05 D = 0.5 Single Pulse TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.001 0.01 0.1 1 10 100 1000 PEAK TRANSIENT POWER (W) t1 TIME (SEC) 0.5 1.5 2.5 -50 -25 0 25 50 75 100 125 150 RDS(on) - On-Resistance(Ω) (Normalized) TJ -JunctionTemperature(°C) 0 10 20 30 40 VGS-Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) RθJA = 110 °C /W VDS = -50V ID = -1.5A © Preliminary 6 Publication Order Number: DS_AM4513C_1A

Package Information

Note: 1. All Dimension Are In mm. 2. Package Body Sizes Exclude Mold Flash, Protrusion Or Gate Burrs. Mold Flash, Protrusion Or Gate Burrs Shall Not Exceed 0.10 mm Per Side. 3. Package Body Sizes Determined At The Outermost Extremes Of The Plastic Body Exclusive Of Mold Flash, Tie Bar Burrs, Gate Burrs And Interlead Flash, But Including Any Mismatch Between The Top And Bottom Of The Plastic Body. 4. The Package Top May Be Smaller Than The Package Bottom. 5. Dimension "B" Does Not Include Dambar Protrusion. Allowable Dambar Protrusion Shall Be 0.08 mm Total In Excess Of "B" Dimension At Maximum Material Condition. The Dambar Cannot Be Located On The Lower Radius Of The Foot. © Preliminary 7 Publication Order Number: DS_AM4513C_1A