AM4502CE ANALOGPOWER | Alldatasheet

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Technical content

Publication Order Number: DS-AM4502CE_A These miniature surface mount MOSFETs utilize a high cell density trench process to provide low r DS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Symbol Maximum Units t <= 10 sec 62.5 oC/W Steady State 110 oC/W THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta RθJA P & N-Channel 30-V (D-S) MOSFET

  • L o w r DS(on) provides higher efficiency and extends battery life
  • Low thermal impedance copper leadframe SOIC-8 saves board space
  • Fast switching speed
  • High performance trench technology Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Symbol N-Channel P-Channel Units VDS 30 -30 VGS 20 -25 TA=25 o C 10 -8.5 TA=70 o C 8.1 -6.8 IDM ±50 ±50 IS 2.3 -2.1 A TA=25 o C 2.1 2.1 TA=70 o C1 . 3 1 . 3 TJ, Tstg -55 to 150 o C Power Dissipation a PD Operating Junction and Storage Temperature Range W Continuous Source Current (Diode Conduction) a ABSOLUTE MAXIMUM RATINGS (T A = 25 oC UNLESS OTHERWISE NOTED) Parameter Pulsed Drain Current b V Gate-Source Voltage Drain-Source Voltage Continuous Drain Current a ID A VDS (V) r DS(on) m(Ω)I D (A) 20 @ VGS = 4.5V 8.4 16 @ VGS = 10V 10.0 23 @ VGS = -10V -8.5 PRODUCT SUMMARY -30 ESD Protected 2000V P-Channel MOSFET N-Channel MOSFET SOIC-8 Top View

Publication Order Number: DS-AM4502CE_A Notes a. Pulse test: PW <= 3 00us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. Ch Min Typ Max VGS = 0 V, ID = 250 uA N 30 VGS = 0 V, ID = -250 uA P -30 VGS = VDS, ID = 250 uA N 1 VGS = VDS, ID = -250 uA P -1 VGS = -20 V, VDS = 0 V P ±10 VGS = 20 V, VDS = 0 V N ±10 VDS = -24 V, VGS = 0 V P- 1 VDS = 24 V, VGS = 0 V N 1 VDS = 5 V, VGS = 10 V N 20 VDS = -5 V, VGS = -10 V P -50 VGS = 10 V, I D = 10 A 16 VGS = 4.5 V , ID = 8.4 A 20 VGS = -10 V, I D = -8.5 A 23 VGS = -4.5 V, I D = -6.8 A 33 VDS = 15 V, ID = 10 A N 40 VDS = -15 V, I D = -9.5 A P 31 Pulsed Source Current (Body Diode)A ISM 5 A N1 2 P1 3 N3 . 3 P5 . 8 N4 . 5 P1 2 N 20 P 15 N 9 P 16 N7 0 P6 2 N2 0 P4 6 Forward TranconductanceA gfs S Total G ate Charge Q g N-Channel VDS=15V, VGS=4.5V, ID=10A P-Channel VDS=-15V, VGS=-4.5V , ID=-10A nC Limits Unit SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED) uA Static Test Conditions V V SymbolParameter Gate-Threshold Voltage V GS(th) Drain-Source Breakdown Voltage V (BR)DSS On-State Drain CurrentA ID(on) A Gate-Body Leakage I GSS uAIDSSZero Gate Voltage Drain Current mΩDrain-Source On-ResistanceA rDS(on) N P Ris e Time nS N-Chaneel VDD =15V, VGS=10V, ID=1A , RGEN =25Ω, P-Channel VDD=-15V, VGS=-10V, ID=-1A RGEN=15Ω Fall-Time t f Turn-Off Delay Time td(on) tr td(of f ) Switching Dynamic Turn-On Delay Time Gate-Source Charge Q gs Ga t e -Dra in Ch a rg e Q gd

Figure 3. On-Resistance Variation with Temperature Figure 5. Transfer Characteristics Figure 2. On-Resistance with Drain Current Figure 4. On-Resistance Variation with Figure 6. Body Diode Forward Voltage Variation

5 Vthrough 10 V

Figure 1. On-Region Characteristics

Publication Order Number: DS-AM4502CE_A

Package Information

SO-8: 8LEAD H x 45°

Publication Order Number: DS-AM4502CE_A

Ordering information

  • AM4502CE-T1-XX –A : A n a l o g P o w e r – M: MOSFET – 4502: Part number – C: Complementary – E: ESD Protected – T1: Tape & reel – XX: Blank: Standard PF: Leadfree