AM4502AC ANALOGPOWER | Alldatasheet
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Technical content
Publication Order Number: DS-AM4502A_G These miniature surface mount MOSFETs utilize a high cell density trench process to provide low r DS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. P & N-Channel 30-V (D-S) MOSFET
- L o w r DS(on) provides higher efficiency and extends battery life
- Low thermal impedance copper leadframe SOIC-8 saves board space
- Fast switching speed
- High performance trench technology Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Symbol N-Channel P-Channel Units VDS 30 -30 VGS ±12 ±25 TA=25 o C 6.9 -8.5 TA=70 o C5 . 4 - 6 . 8 IDM 20 -50 IS 1.3 -2.1 A TA=25 o C 2.1 2.1 TA=70 o C1 . 3 1 . 3 TJ, Tstg o C Continuous Source Current (Diode Conduction) a ABSOLUTE MAXIMUM RATINGS (T A = 25 oC UNLESS OTHERWISE NOTED) Parameter Pulsed Drain Current b V Gate-Source Voltage Drain-Source Voltage Continuous Drain Current a ID A Power Dissipation a PD Operating Junction and Storage Temperature Range W -55 to 150 Symbol Maximum Units t <= 10 sec 62.5 oC/W Steady-State 110 oC/W THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta RθJA VDS (V) r DS(on) m(Ω)I D (A) 30 31 @ VGS = 4.5V 6.9 PRODUCT SUMMARY
Publication Order Number: DS-AM4502A_G Notes a. Pulse test: PW <= 3 00us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. Ch Min T ypM a x VGS = VDS, ID = 250 uA N 0.6 VGS = VDS, ID = -250 uA P -1.0 VGS = -20 V , VDS = 0 V P ±100 VGS = 12 V, VDS = 0 V N ±100 VDS = -24 V , VGS = 0 V P- 1 VDS = 24 V, VGS = 0 V N1 VDS = 5 V, VGS = 4.5 V N2 0 VDS = -5 V, VGS = -4.5 V P- 2 0 VGS = 4 .5 V, ID = 6.9 A N 31 VGS = -4 .5 V, ID = -68 A P 33 VDS = 15 V, ID = 6.9 A N 25 VDS = -15 V, I D = -8.5 A P 10 Pulsed Source Current (Body Diode)A ISM 5A N6 . 0 P1 3 N1 . 0 P5 . 8 N1 . 5 P 12.0 N7 . 4 P1 5 P1 6 N 22.2 P6 2 N3 . 6 P4 6 Limits Unit SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED) nA Static Test Conditions V SymbolParameter Gate-Threshold Voltage V GS(th) A Gate-Body Leakage I GSS uAIDSSZero Gate Voltage Drain Current nS On-State Drain CurrentA ID(on) Forward TranconductanceA gfs S Total G ate Charge Q g mΩDrain-Source On-ResistanceA rDS(on) Switching Dynamic N-Channel VDS=15V , VGS=4.5V, ID=6.9A P-Channel VDS=-15V, VGS=-4.5V , ID=-8.5A nCG ate-Source Charge Q gs Gate-Drain Charge Q gd N-Chaneel VDD =15V , VGS=4.5V, ID=1A , RGEN =6Ω, P-Channel VDD=-15V, VGS=-4.5V , ID=-1A RGEN=6Ω Fall-Time t f Turn-Off Delay Time td(on) tr td(of f ) Turn-On Delay Time Ris e Time
Figure 3. On-Resistance Variation with Temperature Figure 5. Transfer Characteristics Figure 2. On-Resistance with Drain Current Figure 4. On-Resistance Variation with Figure 6. Body Diode Forward Voltage Variation
5 Vthrough 10 V
Figure 1. On-Region Characteristics
Publication Order Number: DS-AM4502A_G Typical Electrical Characteristics (N-Channel) Output Characteristics Transfer Characteristics On-Resistance vs. Junction TemperatureGate Charge CapacitanceOn-Resistance vs. Drain Current V DS - Drain-to-Source Voltage (V) ID, - Drain Current (A) 2.5V 4.5V 1 1.5 2 2.5 3 3.5 V GS - Gate-to-Source Voltage (V) ID - Drain Current (A) TA = -55oC 125oC 25oC 0.8 1.2 1.4 0 5 10 15 20 25 ID - Drain Current (A) rDS(ON), - Normalized On-Resistance VGS = 3.0V 4.5V 200 400 600 800 1000 0 6 12 18 24 30 V DS - Drain-to-Source Voltage (V) C - Capacitance (pF) Ciss Coss Crss 0369 1 2 1 5 Q g - T otal Gate Charge (nC) VGS - Gate-to-Source Voltage (V) 0.6 0.8 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (oC) rDS(ON) - On-Resistance (Normalized) VGS = 4.5V
Publication Order Number: DS-AM4502A_G Typical Electrical Characteristics (N-Channel) Normalized Thermal Transient Impedance, Junction-to-Ambient Single Pulse PowerThreshold Voltage Source-Drain Diode Forward Voltage On -Resistance vs.Gate-to Source Voltage 0.0001 0.001 0.01 0.1 100 VSD - Source-to-Drain Voltage (V) IS - Source Current (A) TA = 125oC 25oC 0.01 0.02 0.03 0.04 0.05 0.06 0.07 22 . 533 . 544 . 55 V GS - Gate-to-Source Voltage (V) rDS(ON) - On-Resistance (OHM) TA = 25oC 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 TJ - Temperature (oC) VGS(th) Variance (V) ID = 250µA 0.001 0.01 0.1 1 10 100 1000 Time (sec) Power (W) SINGLE PULSE RθJA = 250°C/W TA = 25°C 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (sec) Normalized Effective Transient Thermal Impedance RθJA(t) = r(t) + RθJA RθJA = 250 °C/W TJ - TA = P * RθJA(t) Duty Cycle, D = t1 P( pk SINGLE PULSE 0.01 0.02 0.05 0.1 0.2 D = 0.5
Publication Order Number: DS-AM4502A_G
Package Information
SO-8: 8LEAD H x 45°
Publication Order Number: DS-AM4502A_G
Ordering information
- AM4502AC-T1-XX –A : A n a l o g P o w e r – M: MOSFET – 4502A:Part number – C: Complementary – T1: Tape & reel – XX: Blank: Standard PF: Leadfree