AM4500C ANALOGPOWER | Alldatasheet
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Technical content
N & P-Channel 150-V (D-S) MOSFET VDS (V) ID (A) 2.3 2.2 -1.7 -1.6 Symbol Nch Limit Pch Limit Units VDS 150 -150 VGS ±20 ±20 TA=25°C 2.3 -1.7 TA=70°C 1.8 -1.3 IDM 9 -7 IS 2.5 -2.3 A TA=25°C 2.1 2.1 TA=70°C 1.3 1.3 TJ, Tstg °C Symbol Maximum Units 62.5 110 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature -150 500 @ VGS = -10V 530 @ VGS = -4.5V PRODUCT SUMMARY 150 Maximum Junction-to-Ambient a Steady State RθJA A W °C/W Parameter THERMAL RESISTANCE RATINGS Continuous Drain Current a ID Power Dissipation a PD Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Operating Junction and Storage Temperature Range t <= 10 sec Parameter Drain-Source Voltage Gate-Source Voltage ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) 255 @ VGS = 10V 290 @ VGS = 4.5V rDS(on) (mΩ) -55 to 150 V Key Features:
- Low rDS(on) trench technology
- Low thermal impedance
- Fast switching speed Typical Applications:
- White LED boost converters
- Automotive Systems
- Industrial DC/DC Conversion Circuits SO-8 © Preliminary 1 Publication Order Number: DS_AM4500C_1A
Parameter Symbol Test Conditions Min Typ Max Unit VDS = VGS, ID = 250 uA (Nch) 1 V VDS = VGS, ID = -250 uA (Pch) -1 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ±20 V ±100 nA VDS = 120 V, VGS = 0 V (Nch) 1 VDS = -120 V, VGS = 0 V (Pch) -1 VDS = 5 V, VGS = 10 V (Nch) 3.5 A VDS = -5 V, VGS = -10 V (Pch) -2.5 A VGS = 10 V, ID = 2.1 A (Nch) 255 VGS = 4.5 V, ID = 1.7 A (Nch) 290 VGS = -10 V, ID = -1.4 A (Pch) 500 VGS = -4.5 V, ID = -1 A (Pch) 530 VDS = 15 V, ID = 2.1 A (Nch) 11 S VDS = -15 V, ID = -1.4 A (Pch) 11 S IS = 1.3 A, VGS = 0 V (Nch) 0.76 V IS = 1.2 A, VGS = 0 V (Pch) 0.75 V Total Gate Charge Qg 10 Gate-Source Charge Qgs 4.0 Gate-Drain Charge Qgd 4.7 Total Gate Charge Qg 6 Gate-Source Charge Qgs 2.0 Gate-Drain Charge Qgd 2.9 Turn-On Delay Time td(on) 7 Rise Time tr 7 Turn-Off Delay Time td(off) 47 Fall Time tf 20 Turn-On Delay Time td(on) 8 Rise Time tr 7 Turn-Off Delay Time td(off) 96 Fall Time tf 79 Input Capacitance Ciss 1016 Output Capacitance Coss 83 Reverse Transfer Capacitance Crss 40 Input Capacitance Ciss 1008 Output Capacitance Coss 100 Reverse Transfer Capacitance Crss 61 Static
Electrical Characteristics
Forward Transconductance a gfs Drain-Source On-Resistance a On-State Drain Current a Gate-Source Threshold Voltage Zero Gate Voltage Drain Current Diode Forward Voltage a Dynamic b nCN - Channel VDS = 75 V, VGS = 4.5 V, ID = 2.1 A uA mΩ mΩ P - Channel VDS = -15 V, VGS = 0 V, f = 1 MHz pF VGS(th) ID(on) IDSS rDS(on) VSD nC ns ns pF P - Channel VDS = -75 V, VGS = -4.5 V, ID = -1.4 A N - Channel VDD = 75 V, RL = 35.7 Ω, ID = 2.1 A, VGEN = 10 V, RGEN = 6 Ω P - Channel VDD = -75 V, RL = 53.6 Ω, ID = -1.4 A, VGEN = -10 V, RGEN = 6 Ω N - Channel VDS = 15 V, VGS = 0 V, f = 1 MHz © Preliminary 2 Publication Order Number: DS_AM4500C_1A