AM4480N ANALOGPOWER | Alldatasheet

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Technical content

N-Channel 80-V (D-S) MOSFET VDS (V) I D(A) 7.1 6.1 Symbol Limit Units V DS 80 VGS ±20 TA=25°C 7.1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) V Parameter DrainpSource Voltage GatepSource Voltage PRODUCT SUMMARY rDS(on) (mΩ) 41 @ VGS = 10V 57 @ VGS = 4.5V Continuous Drain Current a I Key Features:

  • Low r DS(on) trench technology
  • Low thermal impedance
  • Fast switching speed Typical Applications:
  • White LED boost converters
  • Automotive Systems
  • Industrial DC/DC Conversion Circuits © Preliminary 1 Publication Order Number: DSpAM4480N TA=25°C 7.1 TA=70°C 6 IDM 50 IS 3.8 A TA=25°C 3.1 TA=70°C 2.2 TJ, Tstg p55 to 150 °C Symbol Maximum Units Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Pulsed Drain Current b Continuous Source Current (Diode Conduction) a THERMAL RESISTANCE RATINGS °C/W Parameter Operating Junction and Storage Temperature Range A PD W Maximum JunctionptopAmbient a Continuous Drain Current a Power Dissipation a t <= 10 sec Steady State RθJA ID © Preliminary 1 Publication Order Number: DSpAM4480N

Parameter Symbol Test Conditions Min Typ Max Unit GatepSource Threshold Voltage VGS(th) VDS = VGS, ID = 250 uA 1 V GatepBody Leakage IGSS VDS = 0 V, VGS = ±20 V ±10 uA VDS = 64 V, VGS = 0 V 1 VDS = 64 V, VGS = 0 V, TJ = 55°C 10 OnpState Drain Current ID(on) VDS = 5 V, VGS = 10 V 20 A VGS = 10 V, ID = 5.4 A 41 VGS = 4.5 V, ID = 4.6 A 57 Forward Transconductance gfs VDS = 15 V, ID = 5.4 A 20 S Diode Forward Voltage VSD IS = 2 A, VGS = 0 V 0.76 V Total Gate Charge Qg 19.5 GatepSource Charge Qgs 4.5 GatepDrain Charge Qgd 10 TurnpOn Delay Time td(on) 12.8 Rise Time tr 24 TurnpOff Delay Time td(off) 52.3 Fall Time tf 46 Input Capacitance Ciss 1522 Output Capacitance Coss 129 Reverse Transfer Capacitance Crss 87 Dynamic DrainpSource OnpResistance ns VDS = 40 V, VGS = 4.5 V, ID = 5.4 A Zero Gate Voltage Drain Current Static uA

Electrical Characteristics

mΩrDS(on) IDSS nC VDD = 40 V, RL = 7.5 Ω , ID = 5.4 A, VGEN = 10 V, RGEN = 6 Ω pFVDS = 15 V, VGS = 0 V, f =1 MHz © Preliminary 2 Publication Order Number: DSpAM4480N Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. © Preliminary 2 Publication Order Number: DSpAM4480N

  1. On-Resistance vs. Drain Current 2. Transfer Characteristics Typical Electrical Characteristics 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1 0 2 4 6 8 10 RDS(on) p OnpResistance(Ω) IDpDrain Current (A) 4.0V 3.5V 4.5V 6V,8V,10V 0.06 0.08 0.1 0.12 0.14 0.16 0.18 0.2 RDS(on) p OnpResistance(Ω) TJ = 25 °C ID = 5.4A 0 1 2 3 4 ID p Drain Current (A) VGS p GateptopSource Voltage (V) TJ = 25 °C 0.1 10 pSource Current (A) TJ = 25 °C © Preliminary 3 Publication Order Number: DSpAM4480N 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 5. Output Characteristics 6. Capacitance 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1 0 2 4 6 8 10 RDS(on) p OnpResistance(Ω) IDpDrain Current (A) 4.0V 3.5V 4.5V 6V,8V,10V 0 0.5 1 1.5 ID p Drain Current (A) VDS p DrainptopSource Voltage (V) 10V,8V,6V 3.5V 4.0V 4.5V 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 0.2 0 2 4 6 8 10 RDS(on) p OnpResistance(Ω) VGS p GateptopSource Voltage (V) TJ = 25 °C ID = 5.4A 0 1 2 3 4 ID p Drain Current (A) VGS p GateptopSource Voltage (V) TJ = 25 °C 0.01 0.1 IS p Source Current (A) VSD p SourceptopDrain Voltage (V) TJ = 25 °C 500 1000 1500 2000 2500 0 5 10 15 20 Capacitance (pf) VDSpDrainptopSource Voltage (V) Ciss Coss Crss F = 1MHz © Preliminary 3 Publication Order Number: DSpAM4480N
  1. Gate Charge Typical Electrical Characteristics 8. Normalized On-Resistance Vs Junction Temperature 0 10 20 30 40 VGSpGateptopSource Voltage (V) Qg p Total Gate Charge (nC) ID = 5.4A VDS = 40V 0.1 100 ID Current (A) 10 uS 100 uS 1 mS 10 mS 100 mS

1 SEC

10 SEC

100 SEC 60

PEAK TRANSIENT POWER (W) 0.5 1.5 p50 p25 0 25 50 75 100 125 150 RDS(on) p OnpResistance(Ω) (Normalized) TJ pJunctionTemperature(°C) © Preliminary 4 Publication Order Number: DSpAM4480N 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 11. Normalized Thermal Transient Junction to Ambient 0 10 20 30 40 VGSpGateptopSource Voltage (V) Qg p Total Gate Charge (nC) ID = 5.4A VDS = 40V 0.01 0.1 100 0.1 1 10 100 1000 ID Current (A) VDS Drain to Source Voltage (V) 10 uS 100 uS 1 mS 10 mS 100 mS

100 SEC

0.001 0.01 0.1 1 10 100 1000 PEAK TRANSIENT POWER (W) t1 TIME (SEC) 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) RθJA (t) = r(t) + R θJA RθJA = 80 °C /W TJ - TA = P * R θJA (t) Duty Cycle, D = t 1 / t 2 D = 0.5 0.2 0.1 0.05 0.02 Single Pulse P(pk) 0.5 1.5 p50 p25 0 25 50 75 100 125 150 RDS(on) p OnpResistance(Ω) (Normalized) TJ pJunctionTemperature(°C) © Preliminary 4 Publication Order Number: DSpAM4480N

Package Information

© Preliminary 5 Publication Order Number: DSpAM4480N Note: 1. All Dimension Are In mm. 2. Package Body Sizes Exclude Mold Flash, Protrusion Or Gate Burrs. Mold Flash, Protrusion Or Gate Burrs Shall Not Exceed 0.10 mm Per Side. 3. Package Body Sizes Determined At The Outermost Ex tremes Of The Plastic Body Exclusive Of Mold Flash, Tie Bar Burrs, Gate Burrs And Interlead Flash, But Including Any Mismatch Between The Top And Bottom Of The Plastic Body. 4. The Package Top May Be Smaller Than The Package B ottom. 5. Dimension "B" Does Not Include Dambar Protrusion. Allowable Dambar Protrusion Shall Be 0.08 mm Total In Excess Of "B" Dimension At Maximum Material Condition. The Dambar Cannot Be Located On The Lower Radius Of The Foot. © Preliminary 5 Publication Order Number: DSpAM4480N

Ordering Information

  • AM4480NpT1pXX – A: Analog Power – M: MOSFET – 4480: Part number – N: NpChannel – T1: Tape & reel – XX: Blank: Standard © Preliminary 6 Publication Order Number: DSpAM4480N
  • AM4480NpT1pXX – A: Analog Power – M: MOSFET – 4480: Part number – N: NpChannel – T1: Tape & reel – XX: Blank: Standard PF: Leadfree © Preliminary 6 Publication Order Number: DSpAM4480N