AM4410N ANALOGPOWER | Alldatasheet

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Technical content

Publication Order Number: DS-AM4410_F These miniature surface mount MOSFETs utilize a high cell density trench process to provide low r DS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. N-Channel 30-V (D-S) MOSFET

  • L o w r DS(on) provides higher efficiency and extends battery life
  • Low thermal impedance copper leadframe SOIC-8 saves board space
  • Fast switching speed
  • High performance trench technology Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature VDS (V) r DS(on) m(Ω)I D (A) 13.5 @ VGS = 10V 13 20 @ VGS = 4.5V 11 PRODUCT SUMMARY Symbol Limit Units VDS 30 VGS ±20 TA=25 o C± 1 3 TA=70 o C± 1 1 IDM ±50 IS 2.3 A TA=25 o C3 . 1 TA=70 o C2 . 2 TJ, Tstg -55 to 150 o C Power Dissipation a PD Operating Junction and Storage Temperature Range W Continuous Source Current (Diode Conduction) a ABSOLUTE MAXIMUM RATINGS (T A = 25 oC UNLESS OTHERWISE NOTED) Parameter Pulsed Drain Current b V Gate-Source Voltage Drain-Source Voltage Continuous Drain Current a ID A Symbol Maximum Units Maximum Junction-to-Case a t <= 5 sec R θJC 25 o C/W Maximum Junction-to-Ambient a t <= 5 sec RθJA 50 o C/W THERMAL RESISTANCE RATINGS Parameter

Publication Order Number: DS-AM4410_F Notes a. Pulse test: PW <= 3 00us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. Min Typ Max Gate-Threshold Voltage V GS(th) VDS = VGS, ID = 250 uA 1 Gate-Body Leakage I GSS VDS = 0 V, VGS = 20 V ±100 nA VDS = 24 V, VGS = 0 V 1 VDS = 24 V, VGS = 0 V, TJ = 55oC 25 On-State Drain CurrentA ID(on) VDS = 5 V, VGS = 10 V 20 A VGS = 10 V, ID = 10 A 13.5 VGS = 4.5 V, ID = 8 A 20 Forward TranconductanceA gfs VDS = 15 V, ID = 10 A 40 S Diode Forward Voltage V SD IS = 2.3 A, VGS = 0 V 0.7 V Total Gate Charge Q g 12.5 Gate-Source Charge Q gs 2.6 Gate-Drain Charge Q gd 4.6 Input Capacitance C iss 1191 Output Capacitance C oss 412 Reverse Transfer Capacitance C rss 160 Turn-On Delay Time t d(on) 20 Rise Time t r 9 Turn-Off Delay Time t d(off) 70 Fall-Time t f 20 VDD = 25 V, RL = 25 Ω , ID = 1 A, VGEN = 10 V nS VDS = 15 V, VGS = 4.5 V, ID = 10 A nC VDS = 15 V, VGS = 0 V, f = 1MHz pF Drain-Source On-ResistanceA rDS(on) mΩ Dynamicb Static V Zero Gate Voltage Drain Current IDSS uA SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions Limits Unit

Publication Order Number: DS-AM4410_F

Package Information

SO-8: 8LEAD H x 45°