AM4390N ANALOGPOWER | Alldatasheet

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Technical content

Publication Order Number: DS-AM4390_C These miniature surface mount MOSFETs utilize a high cell density trench process to provide low r DS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. VDS (V) r DS(on) (Ω)I D (A) 0.625 @ VGS = 10 V 1.9 0.900 @ VGS = 4.5V 1.6 PRODUCT SUMMARY 150 N-Channel 150V (D-S) MOSFET

  • L o w r DS(on) provides higher efficiency and extends battery life
  • Low thermal impedance copper leadframe SOIC-8 saves board space
  • Fast switching speed
  • High performance trench technology Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Symbol Maximum Units VDS 150 VGS ±20 Continuous Drain Current a TA=25 o C ID 5.2 IDM ±20 IS 1.6 A Power Dissipation a TA=25 o C PD 3.1 W TJ, Tstg -55 to 150 o COperating Junction and Storage Temperature Range Continuous Source Current (Diode Conduction) a ABSOLUTE MAXIMUM RATINGS (T A = 25 oC UNLESS OTHERWISE NOTED) Parameter Pulsed Drain Current b V Gate-Source Voltage Drain-Source Voltage A Symbol Maximum Units t <= 10 sec 40 Steady State 80 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a RθJA o C/W

Publication Order Number: DS-AM4390_C Notes a. Pulse test: PW <= 3 00us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. Min Typ Max Gate-Threshold Voltage V GS(th) VDS = VGS, ID = 250 uA 1.0 V G ate-Body Leakage I GSS VDS = 0 V, VGS = ±8 V ±100 nA VDS = 120 V, VGS = 0 V 1 VDS = 120 V, VGS = 0 V, TJ = 55oC 10 On-State Drain Current A ID(on) VDS = 5 V, VGS = 10 V 10 A VGS = 10 V, ID = 1.9 A 625 VGS = 4.5 V, ID = 1.6 A 900 Forward Tranconductance A gfs VDS = 10 V, ID = 1.9 A 11.3 S Diode Forward V oltage V SD IS = 1.6 A, VGS = 0 V 0.75 V Total Gate Charge Q g 7.0 G ate-Source Charge Q gs 1.1 Gate-Drain Charge Q gd 2.0 Turn-On Delay Time t d(on) 8 Ris e Time t r 24 Turn-Off Delay Time t d(of f ) 35 Fall-Time t f 10 mΩ Parameter Limits Unit VDD = 10 V, RL = 15 Ω, ID = 1 A, VGEN = 4.5 V VDS = 10 V, VGS = 4.5 V, ID = 1.9 A nC ns Dynamicb SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED) uAIDSSZero G ate V oltage Drain Current Static Test ConditionsSymbol Drain-Source On-Resistance A rDS(on)

Publication Order Number: DS-AM4390_C Typical Electrical Characteristics (N-Channel) Output Characteristics Transfer Characteristics On-Resistance vs. Junction TemperatureGate Charge CapacitanceOn-Resistance vs. Drain Current 02468 1 0 V DS - Drain-to-Source Voltage (V) ID - Drain Current (A) 10V 4.5V 2.5 3 3.5 4 4.5 5 VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) TA = -55oC 25oC 125oC 0.8 1.2 1.4 1.6 0 5 10 15 20 25 30 I D - Drain Current (A) rDS(ON) - Normalized On-Resistance 4.5V 10V 500 1000 1500 2000 2500 0 30 60 90 120 150 V DS - Drain-to-Source Voltage (V) C - Capacitance (pF) CISS CRSS COSS 01 0 2 0 3 0 4 0 Q g - Gate Charge (nC) VGS - Gate-to-Source Voltage (V) 0.2 0.6 1.4 1.8 2.2 2.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (oC) rDS(ON) - On-Resistance (Normalized) VGS = 10V

Publication Order Number: DS-AM4390_C Typical Electrical Characteristics (N-Channel) Normalized Thermal Transient Impedance, Junction-to-Ambient Single Pulse PowerThreshold Voltage Source-Drain Diode Forward Voltage On -Resistance vs.Gate-to Source Voltage 0.01 0.1 1 10 100 Time (sec) Power (W) 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (sec) Normalized Effective Transient Thermal Impedance RθJA(t) = r(t) * RθJA RθJA = 125 °C/W TJ - TA = P * RθJA(t) Duty Cycle, D = t1 P( pk SINGLE PULSE 0.01 0.02 0.05 0.1 0.2 D = 0.5 0.0001 0.001 0.01 0.1 100 VSD - Source-to-Drain Voltage (V) IS - Source Current (A) 125oC 25oC 0.04 0.06 0.08 0.1 0.12 0.14 0.16 2468 1 0 V GS - Gate-to-Source Voltage (V) rDS(ON), On-Resistance (OHM) 1.4 1.7 2.3 2.6 2.9 3.2 -50 -25 0 25 50 75 100 125 150 175 T J - Temperature (oC) VGS(th) - Variance (V) ID = 250µA

Publication Order Number: DS-AM4390_C

Package Information

SO-8: 8LEAD H x 45°