AM40P04-20D ANALOGPOWER | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 5
Technical content
Publication Order Number: DS-AM40P04-20_C These miniature surface mount MOSFETs utilize a high cell density trench process to provide low r DS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. VDS (V) r DS(on) m( Ω) I D (A) 30 @ V GS = -10V 36 40 @ V GS = -4.5V 29 PRODUCT SUMMARY -40 P-Channel 40-V (D-S) MOSFET
- Low r DS(on) provides higher efficiency and extends battery life
- Low thermal impedance copper leadframe DPAK saves board space
- Fast switching speed
- High performance trench technology Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Symbol Maximum Units VDS -40 VGS ±20 Continuous Drain Current a TA=25 o C ID 36 IDM ±40 IS -30 A Power Dissipation a TA=25 o C PD 50 W TJ, T stg -55 to 175 o COperating Junction and Storage Temperature Range Continuous Source Current (Diode Conduction) a ABSOLUTE MAXIMUM RATINGS (T A = 25 oC UNLESS OTHERWISE NOTED) Parameter Pulsed Drain Current b VGate-Source Voltage Drain-Source Voltage A Parameter Symbol Maximum Units Maximum Junction-to-Ambient a RθJA 50 oC/W Maximum Junction-to-Case RθJC 3.0 oC/W THERMAL RESISTANCE RATINGS
Publication Order Number: DS-AM40P04-20_C Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without fu rther notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provide d in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operati ng parameters, including “Typicals” must be validat ed for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situ ation where personal injury or death may occur. Should Buyer purchase or use APL products for any s uch unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, da mages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any cl aim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. Min Typ Max Gate-Threshold Voltage V GS(th) VDS = V GS , I D = -250 uA -1 Gate-Body Leakage I GSS VDS = 0 V, V GS = ±25 V ±100 nA VDS = -24 V, V GS = 0 V -1 VDS = -24 V, V GS = 0 V, T J = 55 oC -5 On-State Drain Current A ID(on) VDS = -5 V, V GS = -10 V -41 A VGS = -10 V, I D = -36 A 30 VGS = -4.5 V, I D = -29 A 40 Forward Tranconductance A gfs VDS = -15 V, I D = -36 A 31 S Diode Forward Voltage V SD IS = -41 A, V GS = 0 V -0.7 V Total Gate Charge Q g 13.9 Gate-Source Charge Q gs 5.2 Gate-Drain Charge Q gd 5.8 Input Capacitance C iss 1583 Output Capacitance C oss 278 Reverse Transfer Capacitance C rss 183 Turn-On Delay Time t d(on) 15 Rise Time t r 12 Turn-Off Delay Time t d(off) 62 Fall-Time t f 46 VDD = -15 V, R L = 15 Ω , ID = -41 A, VGEN = -10 V, RG = 6Ω nS Dynamic b VDS = -15 V, V GS = -4.5 V, ID = -36 A nC VDS = -15 V, V GS = 0 V, f = 1MHz pF Switching Static Zero Gate Voltage Drain Current IDSS uA Drain-Source On-Resistance A rDS(on) mΩ SPECIFICATIONS (T A = 25 oC UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions Limits Unit
Publication Order Number: DS-AM40P04-20_C Typical Electrical Characteristics Transfer Characteristics On Resistance Vs Vgs Voltage Capacitance Gate Charge On-Resistance vs. Junction Temperature 0.6 0.7 0.8 0.9 1.1 1.2 1.3 1.4 1.5 1.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature ( oC) rDS(ON) - On-Resistance (Ohm) (Normalized) VGS = - 10V Output Characteristics 0 0.5 1 1.5 2 2.5 3 3.5 4 VDS (V) IDS Drain Current (A) 3V 6V through 10V 3.5V 4.5V 0 1 2 3 4 5 6 VGS Gate to Source Voltage (V) ID Drain Current (A) 25C 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1 0 10 20 30 40 50 60 ID Drain Current (A) RDS (ON) resistance ( Ω) 4.5V 10V 200 400 600 800 1 000 1 200 1 400 1 600 1 800 2000 2200 2400 0 5 1 0 1 5 20 VDS (V) Capacitance (pF) Ciss Coss Crs 0 5 10 15 20 25 30 QG, Total Gate Charge (nC) VGS (V) VD= 1 0V ID= 1 0A
Figure 11. Transient Thermal Response Curve
Publication Order Number: DS-AM40P04-20_C