AM40N04-30DE ANALOGPOWER | Alldatasheet
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Publication Order Number: DS-AM40N04-30DE_A These miniature surface mount MOSFETs utilize a high cell density trench process to provide low r DS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. VDS (V) r DS(on) m(Ω)I D (A) 32 @ VGS = 10V 33 42 @ VGS = 4.5V 29 PRODUCT SUMMARY N-Channel 40-V (D-S) MOSFET
- L o w r DS(on) provides higher efficiency and extends battery life
- Low thermal impedance copper leadframe DPAK saves board space
- Fast switching speed
- High performance trench technology Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Symbol Limit Units VDS 40 VGS ±20 Continuous Drain Current a TC=25 o C ID 33 IDM 40 IS 30 A Power Dissipation a TC=25 o C PD 50.0 W TJ, Tstg -55 to 175 o COperating Junction and Storage Temperature Range Continuous Source Current (Diode Conduction) a ABSOLUTE MAXIMUM RATINGS (T A = 25 oC UNLESS OTHERWISE NOTED) Parameter Pulsed Drain Current b VGate-Source Voltage Drain-Source Voltage A Parameter Symbol Maximum Units Maximum Junction-to-Ambienta RθJA 50 oC/W Maximum Junction-to-Case RθJC 3.0 oC/W THERMAL RESISTANCE RATINGS
Publication Order Number: DS-AM40N04-30DE_A Notes a. Pulse test: PW <= 3 00us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. Min Typ Max Gate-Threshold Voltage V GS(th) VDS = VGS, ID = 250 uA 1 V Gate-Body Leakage I GSS VDS = 0 V, VGS = 20 V ±100 nA VDS = 24 V, VGS = 0 V 1 VDS = 24 V, VGS = 0 V, TJ = 55oC 25 On-State Drain Current A ID(on) VDS = 5 V, VGS = 10 V 34 A VGS = 10 V, ID = 33 A 32 VGS = 4.5 V, ID = 29 A 42 Forward TranconductanceA gfs VDS = 15 V, ID = 33 A 22 S Diode Forward Voltage V SD IS = 34 A, VGS = 0 V 1.1 V Pulsed Source Current (Body Diode)A ISM 5A Total Gate Charge Q g 5 Gate-Source Charge Q gs 1.1 Gate-Drain Charge Q gd 1.4 Input Capacitance C iss 489 Output Capacitance C oss 94 Turn-On Delay Time t d(on) 16 Rise Time t r 5 Turn-Off Delay Time t d(off) 23 Fall-Time t f 3 VDD = 25 V, RL = 25 Ω , ID = 34 A, VGEN = 10 V nS VDS = 15 V, VGS = 4.5 V, ID = 33 A nC VDS = 15 V, VGS = 0 V, f = 1MHz pF Drain-Source On-ResistanceA rDS(on) mΩ Dynamicb Static Zero Gate Voltage Drain Current IDSS uA SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions Limits Unit
Publication Order Number: DS-AM40N04-30DE_A Typical Electrical Characteristics Transfer Characteristics On-Resistance vs. Junction TemperatureGate Charge CapacitanceOn Resistance vs. Drain Current Output Characteristics 00 . 511 . 522 . 53 VDS - Drai n-to-Source Vol tage (V) ID - Drain Current (A) 6V10V 3456789 V GS - Gate-to-Source Voltage (V) ID - Drain Current (A) TA = -55oC 25oC 125oC 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 0.2 0 5 10 15 20 25 30 35 40 I D - Drain Current (A) rDS(ON) - On-resistance(ohm) 10V 4.5V Ciss, Coss and Crss measurement of AM4541C Die1 NMOS 100 200 300 400 500 600 700 800 900 0 5 10 15 20 Vds(V) Capacitance (nC) Ciss Coss Crss 0.6 0.8 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 T J - Junction Temperature ( oC) rDS(ON) - On-Resistance (Ohm) (Normalized) VGS = 10V 02468 1 0 1 2 QG, Total Gate Charge (nC) VGS (V) VD= 15V ID= 6.5A
Publication Order Number: DS-AM40N04-30DE_A