AM3520C ANALOGPOWER | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 7
Technical content
Publication Order Number: DS-AM3520_F Analog Power These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. N & P-Channel 20-V (D-S) MOSFET
- Low r DS(on) provides higher efficiency and extends battery life
- Low thermal impedance copper leadframe TSOP-6 saves board space
- Fast switching speed
- High performance trench technology Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Symbol N-Channel P-Channel Units VDS 20 -20 VGS ±12 ±12 TA=25 o C 3.7 -2.7 TA=70 o C 2.9 -2.1 IDM 8 -8 IS 1.05 -1.05 A TA=25 o C TA=70 o C TJ, T stg o C Continuous Source Current (Diode Conduction) a ABSOLUTE MAXIMUM RATINGS (T A = 25 oC UNLESS OTHERWISE NOTED) Parameter Pulsed Drain Current b V Gate-Source Voltage Drain-Source Voltage Continuous Drain Current a ID A Power Dissipation a PD Operating Junction and Storage Temperature Range W 1.15 0.7 -55 to 150 Typ Max Typ Max t <= 10 sec 93 110 93 110 Steady State 130 150 130 150 Maximum Junction-to-Ambient a oC/W Unit P-Channel N-Channel RthJA THERMAL RESISTANCE RATINGS Parameter Symbol P-Channel MOSFET N-Channel MOSFET TSOP-6 Top View VDS (V) r DS(on) ( Ω) I D (A) 0.058 @ V GS = 4.5V 3.7 0.082 @ V GS = 2.5V 3.1 0.160 @ V GS = 1.8V 2.2 PRODUCT SUMMARY -20
Publication Order Number: DS-AM3520_F Analog Power Analog Power (APL) reserves the right to make changes without fu rther notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provide d in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operati ng parameters, including “Typicals” must be validat ed for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situ ation where personal injury or death may occur. Should Buyer purchase or use APL products for any s uch unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, da mages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any cl aim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Ch Min Typ Max VGS = V DS , I D = 250 uA N 1 VGS = V DS , I D = -250 uA P -1 VDS = 0 V, V GS = 12 V N 100 VDS = 0 V, V GS = -12 V P -100 VDS = 16 V, V GS = 0 V N 1 VDS = -16 V, V GS = 0 V P -1 VDS = 16 V, V GS = 0 V, T J = 55 oC N 10 VDS = -16 V, V GS = 0 V, T J = 55 oC P -10 VDS = 5 V, V GS = 4.5 V N 5 VDS = -5 V, V GS = -4.5 V P -5 VGS = 4.5 V, I D = 3.7 A N 0.058 VGS = -4.5 V, I D = 3.1 A P 0.112 VGS = 2.5 V, I D = 2.7 A N 0.082 VGS = -2.5 V, I D = -2.2 A P 0.172 VGS = 1.8 V, I D = 2.2 A N 0.160 VGS = -1.8 V, I D = -2.0 A P 0.210 VDS = 5 V, I D = 3.7 A N 10 VDS = -5 V, I D = 3.1 A P 5 IS = 1.05 A, V GS = 0 V N 0.80 IS = -1.05 A, V GS = 0 V P -0.83 N 7.5 P 3.8 N 0.6 P 0.6 N 1.0 P 1.5 N 5 P 5 N 12 P 15 N 13 P 20 N 7 P 20 Forward Tranconductance A gfs S Gate-Source Charge Qgs Ω A Drain-Source On-Resistance A rDS(on) nS N-Chaneel VDD =15V, V GS =4.5V, I D=1A , RGEN =15 Ω, P-Channel VDD =-15V, V GS =-4.5V, I D=-1A RGEN =15 Ω Fall-Time tf Turn-Off Delay Time td(on) tr td(off) Turn-On Delay Time Rise Time Limits IDSS Unit On-State Drain Current A ID(on) IGSS uA uA Zero Gate Voltage Drain Current SPECIFICATIONS (T A = 25 oC UNLESS OTHERWISE NOTED) uA Static Test Conditions V Symbol Parameter Gate-Body Leakage Current Gate-Threshold Voltage VGS(th) S nC Gate-Drain Charge Qgd Dynamic b N-Channel VDS =15V, V GS =4.5V, I D=2.7A P-Channel VDS =-15V, V GS =-4.5V, I D=-3.1A Diode Forward Voltage A VSD Total Gate Charge Qg
Publication Order Number: DS-AM3520_F Analog Power Typical Electrical Characteristics (N-Channel) Output Characteristics Transfer Characteristics On-Resistance vs. Junction Temperature Gate Charge Capacitance On-Resistance vs. Drain Current 0.8 1.2 1.4 1.6 1.8 0 2 4 6 8 10 12 ID - Drain Current (A) rDS(ON) - Normalized On-Resistance 4.5V 2.5V 0 1 2 3 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) VGS = 4.5V 2.0V 2.5V 0.5 1 1.5 2 2.5 3 VG S - Gate-to-Source Voltage (V) ID - Drain Current (A) TA = -55 oC 25 oC 125 oC 100 150 200 250 300 350 400 450 0 5 10 15 20 VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) CISS COSS CRSS 0 2 4 6 8 Qg, Gate C harge ( nC ) Vgs Voltage ( V ) 0.6 0.8 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Tempertaure ( o rDS(ON) - On-Resistance (Normalized) VGS = 4.5V
Publication Order Number: DS-AM3520_F Analog Power Typical Electrical Characteristics (N-Channel) Normalized Thermal Transient Impedance, Junction-to-Ambient Single Pulse Power Threshold Voltage Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to Source Voltage 0.0001 0.001 0.01 0.1 100 VSD, - Source-to-Drain Voltage (V) IS - Source Current (A) TA = 125 oC 25 oC 0.02 0.06 0.1 0.14 0.18 0.22 1 2 3 4 5 VG S - Gate-to-Source Voltage (V) rDS(ON) - On-Resistance (OHM) 0.4 0.5 0.6 0.7 0.8 0.9 1.1 1.2 -50 -25 0 25 50 75 100 125 150 TJ - Temperature ( oC) VGS(th) , Variance (V) ID = 250 µ A 0.01 0.1 1 10 100 1000 Time (sec) Power (W) 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (sec) Normailized E ffective Transient Thermal Impedance Rθ JA (t) = r(t) + R θ JA Rθ JA = 130 oC/W TJ - T A = P * R θ JA (t) Duty Cycle, D = t 1 / t 2 P(pk) SINGLE PULSE 0.01 0.02 0.05 0.1 0.2 D = 0.5
Publication Order Number: DS-AM3520_F Analog Power Typical Electrical Characteristics (P-Channel) Output Characteristics Transfer Characteristics On-Resistance vs. Junction Temperature Gate Charge Capacitance On-Resistance vs. Drain Current 0 0.5 1 1.5 2 2.5 VDS - Drain-to-Soruce Voltage (V) ID - Drain Current (A) -2.5V -2.0V -1.8V VGS =- 4.5V 0.5 1 1.5 2 2.5 3 VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) TA = -55 oC 125 oC 25 oC 0.75 1.25 1.5 1.75 2.25 2.5 2.75 0 1 2 3 4 5 6 ID - Drain Current (A) rDS(ON) - Normalized On-Resistance -4.5V -2.5V 100 200 300 400 500 600 0 5 10 15 20 VDS - Drain-to- Source Voltage (V) C - Capacitance (pF) CISS CRSS COSS -10 0 3 6 9 12 15 Qg, Charge (nC) Vgs Voltage ( V ) 0.6 0.8 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature ( oC) rDS(ON) , - On-Resistance (Normalized) VGS = -4.5V
Publication Order Number: DS-AM3520_F Analog Power Typical Electrical Characteristics (P-Channel) Normalized Thermal Transient Impedance, Junction-to-Ambient Single Pulse Power Threshold Voltage Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to Source Voltage 0.01 0.1 1 10 100 1000 Time (sec) Power (W) 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (sec) Normailized E ffective Transient Thermal Impedance Rθ JA (t) = r(t) + R θ JA Rθ JA = 130 oC/W TJ - T A = P * R θ JA (t) Duty Cycle, D = t 1 / t 2 P(pk) SINGLE PULSE 0.01 0.02 0.05 0.1 0.2 D = 0.5 0.0001 0.001 0.01 0.1 100 VSD - Source-to-Drain Voltage (V) IS - Source Current (A) TA = 125 oC 25 oC 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) rDS(ON) - On-Resistance (OHM) 0.6 0.7 0.8 0.9 1.1 1.2 1.3 -50 -25 0 25 50 75 100 125 150 TJ, - Temperature ( oC) VGS(th) Variance (V) ID =- 250 µ A
Publication Order Number: DS-AM3520_F Analog Power
Package Information
TSOP-6: 6LEAD