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Analog Power AM290N10-02FP N-Channel 100-V (D-S) MOSFET VDS (V) ID (A) Symbol Limit Units VDS 100 VGS ±20 Continuous Drain Current a TC=25°C ID 200 IDM 500 IS 200 A Power Dissipation a TC=25°C PD 500 W TJ, Tstg -55 to 150 °C Symbol Maximum Units RθJA 40 RθJC 0.29 Notes a. Silicon and thermal rating is 290A, package is rated at 200A continuous b. Pulse width limited by maximum junction temperature Maximum Junction-to-Ambient Maximum Junction-to-Case Gate-Source Voltage 290a PRODUCT SUMMARY 100 rDS(on) (mΩ) 4.6 @ VGS = 10V 6.6 @ VGS = 6.5V Pulsed Drain Current b Continuous Source Current (Diode Conduction) a THERMAL RESISTANCE RATINGS °C/W Parameter Operating Junction and Storage Temperature Range ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) V Parameter Drain-Source Voltage A Key Features:

  • Low rDS(on) trench technology
  • Low thermal impedance
  • Fast switching speed Typical Applications:
  • Hot Swap Inrush Limit Circuits
  • Uninterruptible Power Supplies and Inverters
  • Motor Speed Controls TO-247 DRAIN connected to TAB © Preliminary 1 Publication Order Number: DS_AM290N10-02FP_1A

Analog Power AM290N10-02FP Parameter Symbol Test Conditions Min Typ Max Unit Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 uA 1 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ±20 V ±100 nA VDS = 80 V, VGS = 0 V 1 VDS = 80 V, VGS = 0 V, TJ = 55°C 25 On-State Drain Current a ID(on) VDS = 5 V, VGS = 10 V 420 A VGS = 10 V, ID = 50 A 4.6 VGS = 6.5 V, ID = 44 A 6.6 Forward Transconductance a gfs VDS = 15 V, ID = 10 A 68 S Diode Forward Voltage a VSD IS = 50 A, VGS = 0 V 0.82 V Total Gate Charge Qg 260 Gate-Source Charge Qgs 58 Gate-Drain Charge Qgd 144 Turn-On Delay Time td(on) 71 Rise Time tr 150 Turn-Off Delay Time td(off) 401 Fall Time tf 162 Input Capacitance Ciss 18470 Output Capacitance Coss 1622 Reverse Transfer Capacitance Crss 1504 Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. mΩrDS(on) nC VDS = 50 V, RL = 5 Ω, ID = 10 A, VGEN = 10 V, RGEN = 6 Ω VDS = 50 V, VGS = 6.5 V, ID = 10 A Drain-Source On-Resistance a pFVDS = 15 V, VGS = 0 V, f = 1 Mhz Zero Gate Voltage Drain Current Static uA

Electrical Characteristics

Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. © Preliminary 2 Publication Order Number: DS_AM290N10-02FP_1A

Analog Power AM290N10-02FP 1. On-Resistance vs. Drain Current 2. Transfer Characteristics 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 5. Output Characteristics 6. Capacitance Typical Electrical Characteristics 0.005 0.01 0.015 0 10 20 30 RDS(on) - On-Resistance(Ω) ID-Drain Current (A) 8V,10V 5.5V 0 0.05 0.1 0.15 0.2 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 10V,8V 5.5V 0.005 0.01 0.015 0.02 0.025 0.03 0.035 0.04 0 2 4 6 8 10 RDS(on) - On-Resistance(Ω) VGS - Gate-to-Source Voltage (V) TJ = 25°C TJ = 25°C 0 2 4 6 8 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) TJ = 25°C 0.01 0.1 100 0.2 0.4 0.6 0.8 1 IS - Source Current (A) VSD - Source-to-Drain Voltage (V) TJ = 25°C 5000 10000 15000 20000 25000 30000 35000 40000 45000 0 5 10 15 20 Capacitance (pf) VDS-Drain-to-Source Voltage (V) Ciss Coss Crss F = 1MHz ID = 10A © Preliminary 3 Publication Order Number: DS_AM290N10-02FP_1A

Analog Power AM290N10-02FP 7. Gate Charge 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation Typical Electrical Characteristics 8. Normalized On-Resistance Vs Junction Temperature 11. Normalized Thermal Transient Junction to Ambient 0 100 200 300 400 VGS-Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) 200 400 600 800 1000 1200 1400 1600 0.001 0.01 0.1 1 10 100 1000 PEAK TRANSIENT POWER (W) t1 TIME (SEC) 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) D = 0.5 0.2 0.1 0.05 0.02 Single Pulse RθJA(t) = r(t) + RθJA TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.5 1.5 2.5 -50 -25 0 25 50 75 100 125 150 RDS(on) - On-Resistance(Ω) (Normalized) TJ -JunctionTemperature(°C) P(pk) RθJA = 40°C /W VDS = 50V ID = 10A 0.01 0.1 100 1000 10000 0.1 1 10 100 1000 ID Current (A) VDS Drain to Source Voltage (V) 100 uS 1 mS 10 mS DC Idm limit Limited by RDS © Preliminary 4 Publication Order Number: DS_AM290N10-02FP_1A

Analog Power AM290N10-02FP

Package Information

© Preliminary 5 Publication Order Number: DS_AM290N10-02FP_1A