AM2319P ANALOGPOWER | Alldatasheet
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July, 2003 - Rev. A PRELIMINARY Publication Order Number: DS-AM2319_H These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are voltage control small signal switch, power management in portable and battery-powered products such as computer portable electronics and other battery power application. P - Channel Logic Level MOSFET
- L o w r DS(on) Provides Higher Efficiency and Extends Battery Life
- Fast Switch
- Low Gate Charge
- Miniature SOT-23 Surface Mount Package Saves Board Space Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Symbol M aximum Units t <= 5 sec 250 Steady-State 285 THERMAL RESISTANCE RATINGS Parameter o C/WMaximum Junction-to-Ambient a RTHJA D S G Symbol Maximum Units VDS -30 VGS ±20 TA=25 o C- 2 . 1 TA=70 o C- 1 . 7 IDM ±10 IS -0.4 A TA=25 o C1 . 2 5 TA=70 o C0 . 8 TJ, Tstg -55 to 150 o C Continuous Source Current (Diode Conduction) a ABSOLUTE MAXIMUM RATINGS (T A = 25 oC UNLESS OTHERWISE NOTED) Parameter Pulsed Drain Current b V Gate-Source Voltage Drain-Source Voltage Continuous Drain Current a ID A Power Dissipation a PD Operating Junction and Storage Temperature Range W VDS (V) r DS(on) (Ω)I D (A) PRODUCT SUMMARY
July, 2003 - Rev. A PRELIMINARY Publication Order Number: DS-AM2319_H Notes a. Pulse test: PW <= 3 00us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typical” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. Min Typ Max VDS = -24 V, VGS = 0 V -1 VDS = -24 V, VGS = 0 V, TJ = 55oC -10 G ate-Body Leakage I GSS VDS = 0 V, VGS = ±20 V ±100 nA G ate-Threshold V oltage V GS(th) VDS = VGS, ID = -250 uA -1.30 V On-State Drain Current A ID(on) VDS = -5 V, VGS = -4.5 V -3 A VGS = -10 V, ID = -2.1 A 0.20 Forward Tranconductance A gfs VDS = -5 V, ID = -2.1 A 2 S Diode Forward V oltage V SD IS = -0.4 A, VGS = 0 V -0.70 -1.2 V Total Gate Charge Q g 3.4 Gate-Source Charge Q gs 0.8 Gate-Drain Charge Q gd 1.5 Turn-On Delay Time t d(on) 8 Ris e Time t r 18 Turn-Off Delay Time t d(of f ) 52 Fall-Time t f 39 SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED) Static Test Conditions Zero G ate V oltage Drain Current I DSS µA SymbolParameter Limits nC VDS = -10 V, ID = -1.1 A, RG = 50 Ω, VGEN = -10 V Unit Drain-Source On-Resistance A rDS(on) Ω ns Dynamicb VDS = -10 V, VGS = -5 V, ID = -2.1 A
July, 2003 - Rev. A PRELIMINARY Publication Order Number: DS-AM2319_H