AM2317P ANALOGPOWER | Alldatasheet
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Technical content
Publication Order Number: DS-AM2317_C These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. P - Channel Logic Level MOSFET
- Low r DS(on) provides higher efficiency and extends battery life
- Low thermal impedance copper leadframe SOT-23 saves board space
- Fast switching speed
- High performance trench technology Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Symbol Maximum Units t <= 5 sec 250 Steady-State 285 THERMAL RESISTANCE RATINGS Parameter o C/W Maximum Junction-to-Ambient a RTHJA VDS (V) r DS(on) ( Ω) I D (A) 0.30 @ V GS = -10 V -1.0 -30 PRODUCT SUMMARY Symbol Maximum Units VDS -30 VGS ±20 TA=25 o C ±0.9 TA=70 o C ±0.75 IDM ±10 IS 0.4 A TA=25 o C 0.5 TA=70 o C 0.42 TJ, T stg -55 to 150 o C Drain-Source Voltage Continuous Drain Current a ID A Power Dissipation a PD Operating Junction and Storage Temperature Range W Continuous Source Current (Diode Conduction) a ABSOLUTE MAXIMUM RATINGS (T A = 25 oC UNLESS OTHERWISE NOTED) Parameter Pulsed Drain Current b V Gate-Source Voltage D S G
Publication Order Number: DS-AM2317_C Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without fu rther notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provide d in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operati ng parameters, including “Typical” must be validate d for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situ ation where personal injury or death may occur. Should Buyer purchase or use APL products for any s uch unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, da mages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any cl aim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. Min Typ Max Drain-Source Breakdown Voltage V (BR)DSS VGS = 0 V, I D = -250 uA -30 VDS = -24 V, V GS = 0 V -1 VDS = -24 V, V GS = 0 V, T J = 55 oC -10 Gate-Body Leakage I GSS VDS = 0 V, V GS = ±20 V ±100 nA Gate-Threshold Voltage V GS(th) VDS = V GS , I D = -250 uA -0.80 -1.7 -2.6 V On-State Drain Current A ID(on) VDS = -5 V, V GS = -4.5 V -2 A VGS = -10 V, I D = -1.0 A 0.25 0.30 VGS = -4.5 V, I D = -0.9 A T J = 55 o C 0.53 0.66 VGS = -4.5 V, I D = -0.9 A 0.45 0.50 Forward Tranconductance A gfs VDS = -5 V, I D = -1.1 A 2 S Diode Forward Voltage V SD IS = -0.4 A, V GS = 0 V -0.70 -1.2 V Total Gate Charge Q g 2.0 3.0 Gate-Source Charge Q gs 0.5 Gate-Drain Charge Q gd 1.1 Turn-On Delay Time t d(on) 8 16 Rise Time t r 16 32 Turn-Off Delay Time t d(of f) 36 93 Fall-Time t f 33 94 VDS = -10 V, V GS = -5 V, ID = -0.9 A SPECIFICATIONS (T A = 25 o C UNLESS OTHERWISE NOTED) Switch Off Characteristics Test Conditions Zero Gate Voltage Drain Current I DSS µA Symbol Parameter Limits nC VDS = -10 V, I D = -0.9 A, RG = 50 Ω, V GEN = -10 V Switch On Characteristics Unit Switching Drain-Source On-Resistance A rDS(on) Ω ns Dynamic b
Publication Order Number: DS-AM2317_C