AM2308NE ANALOGPOWER | Alldatasheet
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Publication Order Number: DS-AM2308NE_B These miniature surface mount MOSFETs utilize a high cell density trench process to provide low r DS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. VDS (V) r DS(on) m( Ω) I D (A) 60 @ V GS = 4.5V 3.5 82 @ V GS = 2.5V 3.0 PRODUCT SUMMARY N-Channel 30-V (D-S) MOSFET
- Low r DS(on) provides higher efficiency and extends battery life
- Low thermal impedance copper leadframe SOT-23 saves board space
- Fast switching speed
- High performance trench technology Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature S y m b ol L im it U n its VD S 3 0 VG S ± 1 2 TA= 2 5 o C 3 .5 TA= 7 0 o C 2 .8 ID M 1 6 IS 1 .2 5 A TA= 2 5 o C 1 .2 5 TA= 7 0 o C 0 .8 TJ, T stg -5 5 to 1 5 0 o C C o n ti n u o u s S o u rce C u rren t (D io d e C o n d u cti o n ) a A BS O L U T E M A X IM U M R A T IN G S (T A = 25 oC U N L E S S O T H E R W IS E N O T E D ) P a r a m eter Pu lsed D rai n C u rren t b V G ate-S o u rce V o ltag e D rain -S o u rce V o l tag e C o n ti n u o u s D rai n C u rren t a ID A Po w er D i ssi p atio n a PD O p eratin g Ju n cti o n an d S to rag e Tem p eratu re R an g e W Symbol Maximum Units t <= 10 sec 100 o C/W Steady-State 166 o C/W THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a RθJA D S G ESD Protected 2000V
Publication Order Number: DS-AM2308NE_B Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without fu rther notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provide d in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operati ng parameters, including “Typicals” must be validat ed for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situ ation where personal injury or death may occur. Should Buyer purchase or use APL products for any s uch unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, da mages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any cl aim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. SPECIFICATIONS (T A = 25 oC UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions Limits Unit Min Typ Max Static Gate-Threshold Voltage V GS(th) VDS = V GS , I D = 250 uA 0.6 V Gate-Body Leakage I GSS VDS = 0 V, V GS = 12 V ±10 uA Zero Gate Voltage Drain Current I DSS VDS = 24 V, V GS = 0 V 1 uA VDS = 24 V, V GS = 0 V, T J = 55 oC 25 On-State Drain Current A ID(on) VDS = 5 V, V GS = 4.5 V 6 A Drain-Source On-Resistance A rDS(on) VGS = 4.5 V, I D = 3.5 A 60 mΩ VGS = 2.5 V, I D = 3 A 82 Forward Tranconductance A gfs VDS = 15 V, I D = 3.5 A 6.9 S Diode Forward Voltage V SD IS = 2.3 A, V GS = 0 V 0.8 V Dynamic b Total Gate Charge Q g VDS = 15 V, V GS = 2.5 V, ID = 3.5 A 6.3 nC Gate-Source Charge Q gs 0.9 Gate-Drain Charge Q gd 1.9 Turn-On Delay Time t d(on) VDD = 25 V, R L = 25 Ω , I D = 1 A, VGEN = 10 V nS Rise Time t r 5 Turn-Off Delay Time t d(off) 23 Fall-Time t f 3
Publication Order Number: DS-AM2308NE_B Typical Electrical Characteristics (N-Channel) Output Characteristics Transfer Characteristics On-Resistance vs. Junction Temperature Gate Charge Capacitance On-Resistance vs. Drain Current VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) 2.5V 4.5V 400 800 1200 1600 2000 2400 0 5 10 15 20 VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) CISS CRSS COSS 0.8 1.2 1.4 0 5 10 15 20 25 ID - Drain Current (A) rDS(ON) - Normalized On-Resistance 4.5V 10V 0 10 20 30 40 50 60 Gate charge ( nC ) Vgs Voltage ( V ) 0.6 0.8 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature ( oC) rDS(ON) - On-Resistance (Normalized) VGS = 4.5V 0 1 2 3 4 VGS Gate to Source Voltage (V) ID Drain Current (A) 25C
Publication Order Number: DS-AM2308NE_B Typical Electrical Characteristics (N-Channel) Normalized Thermal Transient Impedance, Junction-to-Ambient Single Pulse Power Threshold Voltage Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to Source Voltage 0.01 0.1 1 10 100 Time (sec) Power (W) 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (sec) Normalized Effective Transient Thermal Impedance Rθ JA (t) = r(t) * R θ JA Rθ JA = 125 ° C/W TJ - T A = P * Rθ JA (t) Duty Cycle, D = t 1 / t P(pk SINGLE PULSE 0.01 0.02 0.05 0.1 0.2 D = 0.5 0.0001 0.001 0.01 0.1 100 VSD - Source-to-DrainVoltage (V) IS - Source CURRENT (A) TA = 125 oC 25 oC 0.01 0.02 0.03 0.04 0.05 0.06 0.07 2 2.5 3 3.5 4 4.5 5 VGS - Gate-to-Source Voltage (V) rDS(ON) - On-Resistance (OHM) 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 TJ - Temperature ( oC) VGS(th) - Variance (V) ID = 250 µ A
Publication Order Number: DS-AM2308NE_B