AM2300N ANALOGPOWER | Alldatasheet
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July, 2002 - Rev. A PRELIMINARY Publication Order Number: DS-AM2300_D These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are DC-DC converters, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. N-Channel 20-V (D-S) MOSFET
- L o w r DS(on) Provides Higher Efficiency and Extends Battery Life
- Low gate charge 7nC
- High performance
- High current handling
- Miniature SOT-23 Surface Mount Package Saves Board Space Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 2.5-V Rated D S G VDS (V) r DS(on) (Ω)I D (A) 0.035 @ VGS = 4.5V 4.3 0.050 @ VGS = 2.5V 3.520 PRODUCT SUMMARY Symbol Maximum Units VDS 20 VGS ±8 TA=25oC4 . 3 TA=70oC3 . 3 IDM 10 IS 0.46 A TA=25oC1 . 2 5 TA=70oC0 . 8 TJ, Tstg -55 to 150 oC Continuous Source Current (Diode Conduction)a ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Parameter Pulsed Drain Currentb VGate-Source Voltage Drain-Source Voltage Continuous Drain Currenta ID A Power Dissipationa PD Operating Junction and Storage Temperature Range W Symbol Maximum Units t <= 5 sec 100 Steady-State 166 THERMAL RESISTANCE RATINGS Parameter oC/WMaximum Junction-to-Ambienta RTHJA
July, 2002 - Rev. A PRELIMINARY Publication Order Number: DS-AM2300_D Notes a. Pulse test: PW <= 3 00us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typical” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. Min Typ Max Gate-Threshold Voltage V GS(th) VDS = VGS, ID = 250 uA 0.7 Gate-Body Leakage I GSS VDS = 0 V, VGS = 8 V 100 nA VDS = 16 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 55oC 10 On-State Drain Current A ID(on) VDS = 5 V, VGS = 4.5 V 10 A VGS = 4.5 V, ID = 4.3 A 30 35 VGS = 2.5 V, ID = 3.5 A 40 50 Forward TranconductanceA gfs VDS = 5 V, ID = 3.0 A 11 S Diode Forward Voltage V SD IS = 0.46 A, VGS = 0 V 0 . 6 51 . 2 0V Total Gate Charge Q g 7.0 Gate-Source Charge Q gs 1.20 Gate-Drain Charge Q gd 1.90 Input Capacitance C iss 700 Output Capacitance C oss 175 Reverse Transfer Capacitance C rss 85 Turn-On Delay Time t d(on) 9 Rise Time t r 11 Turn-Off Delay Time t d(off) 18 Fall-Time t f 5 pF Parameter Limits Unit VDD = 10 V, ID = 1 A , RG = 6 Ω, VGEN = 4.5 V ns Drain-Source On-ResistanceA Dynamicb VDS = 10 V, VGS = 4.5 V, ID = 3.0 A nC mΩrDS(on) VDS = 15 V, VGS = 0 V, f = 1MHz SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED) uAIDSSZero Gate Voltage Drain Current Static Test ConditionsSymbol
July, 2002 - Rev. A PRELIMINARY Publication Order Number: DS-AM2300_D