AM202N04-04P ANALOGPOWER | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

N-Channel 40-V (D-S) MOSFET VDS (V) ID(A) Symbol Limit Units VDS 40 VGS ±20 TA=25°C ID 202 IDM 808 IS 202 A Power Dissipation a TA=25°C PD 300 W TJ, Tstg -55 to 150 °C Symbol Maximum Units RθJA 62.5 RθJC 0.5 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature THERMAL RESISTANCE RATINGS Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Continuous Drain Current a A Maximum Junction-to-Ambient a Maximum Junction-to-Case °C/W Parameter Operating Junction and Storage Temperature Range ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) V PRODUCT SUMMARY rDS(on) (mΩ) 4 @ VGS = 10V 6 @ VGS = 4.5V Gate-Source Voltage 202 Drain-Source Voltage Parameter Key Features:

  • Low rDS(on) trench technology
  • Low thermal impedance
  • Fast switching speed Typical Applications:
  • White LED boost converters
  • Automotive Systems
  • Industrial DC/DC Conversion Circuits DRAIN connected to TAB © Preliminary 1 Publication Order Number: DS_AM202N04-04P_1A

Parameter Symbol Test Conditions Min Typ Max Unit Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 uA 1 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ±20 V ±100 nA VDS = 32 V, VGS = 0 V 1 VDS = 32 V, VGS = 0 V, TJ = 55°C 25 On-State Drain Current ID(on) VDS = 5 V, VGS = 10 V 120 A VGS = 10 V, ID = 30 A 4 VGS = 4.5 V, ID = 20 A 6 Forward Transconductance gfs VDS = 15 V, ID = 30 A 30 S Diode Forward Voltage VSD IS = 50 A, VGS = 0 V 1.1 V Total Gate Charge Qg 64 Gate-Source Charge Qgs 16 Gate-Drain Charge Qgd 33 Turn-On Delay Time td(on) 22 Rise Time tr 36 Turn-Off Delay Time td(off) 209 Fall Time tf 86 Input Capacitance Ciss 8060 Output Capacitance Coss 808 Reverse Transfer Capacitance Crss 783 Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. ns Zero Gate Voltage Drain Current Static uA

Electrical Characteristics

VDS = 20 V, VGS = 4.5 V, ID = 20 A pFVDS = 15 V, VGS = 0 V, f = 1 MHz Drain-Source On-Resistance Dynamic mΩrDS(on) nC VDS = 20 V, RL = 1 Ω, ID = 20 A, VGEN = 10 V, RGEN = 6 Ω © Preliminary 2 Publication Order Number: DS_AM202N04-04P_1A

  1. On-Resistance vs. Drain Current 2. Transfer Characteristics 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 5. Output Characteristics 6. Capacitance Typical Electrical Characteristics 0.002 0.004 0.006 0.008 0.01 0 20 40 60 80 100 RDS(on) - On-Resistance(Ω) ID-Drain Current (A) 3.5V 8V,10V 4.5V 100 0 0.2 0.4 0.6 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 10V,8V 3.5V 6V 4.5V 0.005 0.01 0.015 0.02 0.025 0.03 0 2 4 6 8 10 RDS(on) - On-Resistance(Ω) VGS - Gate-to-Source Voltage (V) TJ = 25°C ID = 20A 100 0 1 2 3 4 5 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) TJ = 25°C 0.01 0.1 0.2 0.4 0.6 0.8 1 IS - Source Current (A) VSD - Source-to-Drain Voltage (V) TJ = 25°C 2000 4000 6000 8000 10000 12000 14000 0 5 10 15 20 Capacitance (pf) VDS-Drain-to-Source Voltage (V) Ciss Coss Crss F = 1MHz © Preliminary 3 Publication Order Number: DS_AM202N04-04P_1A
  1. Gate Charge 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 8. Normalized On-Resistance Vs Junction Temperature 11. Normalized Thermal Transient Junction to Ambient Typical Electrical Characteristics 0 26 52 78 104 130 VGS-Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) ID = 20A VDS = 20V 0.01 0.1 100 1000 0.1 1 10 100 1000 ID Current (A) VDS Drain to Source Voltage (V) 10 uS 100 uS 1 mS 10 mS 100 mS

1 SEC

10 SEC

100 SEC

0.001 0.01 0.1 1 10 100 1000 PEAK TRANSIENT POWER (W) t1 TIME (SEC) 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) RθJA(t) = r(t) + RθJA RθJA = 62.5 °C /W TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 D = 0.5 0.2 0.1 0.05 0.02 Single Pulse P(pk) 0.5 1.5 -50 -25 0 25 50 75 100 125 150 RDS(on) - On-Resistance(Ω) (Normalized) TJ -JunctionTemperature(°C) © Preliminary 4 Publication Order Number: DS_AM202N04-04P_1A

Package Information

© Preliminary 5 Publication Order Number: DS_AM202N04-04P_1A