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N-Channel 100-V (D-S) MOSFET VDS (V) ID (A) Symbol Limit Units VDS 100 VGS ±20 Continuous Drain Current a TC=25°C ID 200 IDM 400 TC=25°C IS 200 A Power Dissipation a TC=25°C PD 300 W TJ, Tstg -55 to 175 °C Symbol Maximum Units RθJA 62.5 RθJC 0.5 Notes a. Package Limited b. Pulse width limited by maximum junction temperature c. Surface Mounted on 1” x 1” FR4 Board. A Maximum Junction-to-Ambient c Maximum Junction-to-Case Continuous Source Current (Diode Conduction) a Gate-Source Voltage PRODUCT SUMMARY 100 rDS(on) (mΩ) 5.5 @ VGS = 10V 7 @ VGS = 6.5V 200a Pulsed Drain Current b THERMAL RESISTANCE RATINGS °C/W Parameter Operating Junction and Storage Temperature Range ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) V Parameter Drain-Source Voltage Key Features:

  • Low rDS(on) trench technology
  • Low thermal impedance
  • Fast switching speed Typical Applications:
  • LED Inverter Circuits
  • DC/DC Conversion Circuits
  • Motor drives © Preliminary 1 Publication Order Number: DS_AM200N10-05B_1A

Parameter Symbol Test Conditions Min Typ Max Unit Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 uA 1 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ±20 V ±100 nA VDS = 80 V, VGS = 0 V 1 VDS = 80 V, VGS = 0 V, TJ = 55°C 10 On-State Drain Current a ID(on) VDS = 5 V, VGS = 10 V 120 A VGS = 10 V, ID = 20 A 5.5 VGS = 6.5 V, ID = 16 A 7 Forward Transconductance a gfs VDS = 15 V, ID = 20 A 15 S Diode Forward Voltage a VSD IS = 20 A, VGS = 0 V 0.88 V Total Gate Charge Qg 159 Gate-Source Charge Qgs 39 Gate-Drain Charge Qgd 88 Turn-On Delay Time td(on) 32 Rise Time tr 88 Turn-Off Delay Time td(off) 151 Fall Time tf 50 Input Capacitance Ciss 11094 Output Capacitance Coss 900 Reverse Transfer Capacitance Crss 894 Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. pFVDS = 15 V, VGS = 0 V, f = 1 Mhz nC VDS = 50 V, RL = 2.5 Ω, ID = 20 A, VGEN = 10 V, RGEN = 1.5 Ω VDS = 50 V, VGS = 6.5 V, ID = 20 A Drain-Source On-Resistance a Zero Gate Voltage Drain Current Static uA

Electrical Characteristics

mΩrDS(on) Dynamic b ns © Preliminary 2 Publication Order Number: DS_AM200N10-05B_1A

  1. On-Resistance vs. Drain Current 2. Transfer Characteristics 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 5. Output Characteristics 6. Capacitance Typical Electrical Characteristics 0.01 0.02 0.03 0 10 20 30 RDS(on) - On-Resistance(Ω) ID-Drain Current (A) 5.5V 6V,8V,10V 0 0.1 0.2 0.3 0.4 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 10V,8V,6V 5.5V 0.01 0.02 0.03 0 2 4 6 8 10 RDS(on) - On-Resistance(Ω) VGS - Gate-to-Source Voltage (V) TJ = 25°C TJ = 25°C 0 2 4 6 8 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) TJ = 25°C 0.01 0.1 100 IS - Source Current (A) VSD - Source-to-Drain Voltage (V) TJ = 25°C 5000 10000 15000 20000 25000 0 5 10 15 20 Capacitance (pf) VDS-Drain-to-Source Voltage (V) Ciss Coss Crss F = 1MHz ID = 20A © Preliminary 3 Publication Order Number: DS_AM200N10-05B_1A
  1. Gate Charge 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 8. Normalized On-Resistance Vs Junction Temperature 11. Normalized Thermal Transient Junction to Ambient Typical Electrical Characteristics 0 50 100 150 200 250 VGS-Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) 0.01 0.1 100 1000 0.1 1 10 100 1000 ID Current (A) VDS Drain to Source Voltage (V) 10 uS 100 uS 1 mS 10 mS 100 mS

1 SEC

10 SEC

100 SEC

0.001 0.01 0.1 1 10 100 1000 PEAK TRANSIENT POWER (W) t1 TIME (SEC) 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) D = 0.5 0.2 0.1 0.05 0.02 Single Pulse RθJA(t) = r(t) + RθJA TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.5 1.5 -50 -25 0 25 50 75 100 125 150 RDS(on) - On-Resistance(Ω) (Normalized) TJ -JunctionTemperature(°C) P(pk) RθJA = 62.5 °C /W VDS = 40V ID = 20A © Preliminary 4 Publication Order Number: DS_AM200N10-05B_1A

Package Information

© Preliminary 5 Publication Order Number: DS_AM200N10-05B_1A